Phase-Change Properties of annealed $Ge_1Se_1Te_2$ thin film with Sb doping for Application of Phase-Change Random Access Memory

상변화 메모리 응용을 위한 Sb을 첨가한 $Ge_1Se_1Te_2$ 박막의 열처리 후 상변화 특성

A detailed investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Se-Te material for phase-change cell. Actually, the performance properties have been improved surprisingly then conventional Ge-Sb-Te. However, crystallization time was as long as ever for amorphization time. We conducted this experiment in order to solve that problem by doping-Sb with annealing.