• Title/Summary/Keyword: Phase variation

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Effects of Microstructure on Thermoelectric Properties of $FeSi_2$

  • Park, Joon-Young;Song, Tae-Ho;Lee, Hong-Lim;Pai, Chul-Hoon
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.11-18
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    • 1996
  • The variation of electrical conductively and Seebeck coefficient of FeSi2 according to the density of the specimen has been observed over the temperature range 50 to $700^{\circ}C$. A conventional pressureless sintering method with various sintering time (0, 0.5, 1, 5h) at $1190^{\circ}C$ and/or various sintering temperatures(1160, 1175, 1190, $1200^{\circ}C$) for 2 h was carried out to prepare $FeSi_2$ specimens having various densities. The relationship between the electrical conductivity and Seebeck coefficient was investigated after two steps of annealing (at $865^{\circ}C$ and then $800^{\circ}C$ for total 160h) and thermoelectric measurement. The electrical conductivity for the specimens showed a typical tendency of semiconductor, the average activation energy of which in the intrinsic region (above $300^{\circ}C$) was observed approximately as 0.452 eV, and increased slightly with density. On the other hand, the specimen of the lower density showed the higher value of Seebeck coefficient in the intrinsic region. As the temperature fell into the non-degenerate region, the highly densified specimen which had relatively little residual metal phase showed the higher value of Seeback coefficient. The power factor of all specimens showed the optimum value at $200^{\circ}C$. However, the power factor of the specimen of the lower density increased again from $400^{\circ}C$ and that of the higher dense specimen increased from $500^{\circ}C$. The power factor was more affected by Seebeck coefficient than electrical conductivity over all temperature range.

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Color variation of copper glaze with the addition of tin oxide (산화주석 첨가에 따른 동화유약의 발색 변화)

  • No, Hyunggoo;Kim, Soomin;Kim, Ungsoo;Cho, Wooseok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.5
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    • pp.243-248
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    • 2017
  • In this study copper glaze samples were prepared with varying amount of tin oxide, and the chromatic characteristics of glazes were explained on the results of spectrophotometric, crystalline phase, and microstructural analyses. The red color of copper glaze was dissipated with the addition of tin oxide and turned into achromatic color due to the decrease of CIEab values. Tin oxide homogeneously distributed in the glaze layer interfered with the red color generation coming from the growth of Cu nuclei, and formed an alloy with metal copper around bubbles. This resulted in the decrease of metal copper peak intensity with minor $Cu_2O$ peak. With the 3.79 % tin oxide addition the glaze was appeared as gray due to the black color CuO and Cassiterite $SnO_2$ phases.

A Study on Calculating Inductance Characteristics of Switched Reluctance Motor (스위치드 리럭턴스 전동기의 인덕터스 산정에 관한 연구)

  • 최경호;김동희;노채균;김민희
    • The Transactions of the Korean Institute of Power Electronics
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    • v.6 no.4
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    • pp.333-340
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    • 2001
  • This paper presents a calculating method for inductance of the Switched Reluctance Motor(SRM) for torque characteristics and driving by analytical model. The torque generating characteristics of the SRM depend on the phase current and the inductance variation features, but Its nonlinear magnetic characteristics make it difficult to calculating inductance. Recently, The approaches for calculating inductance have taken vary from detailed finite element method(FEM) and Fitting method in magnetization curves using complex nonlinear magnetic circuit models. But those methods have not satisfactory approach for machine performance calculations, because of having a long time and remodeling for analyses, therefore thus an alternative approach is required. So it is suggested simply calculating method of the inductance based on designed data of machinery by analytical model in unaligned and aligned rotor. In order to prove the calculating, there are compare with analytical FEM. direct measurement, this method, and simulation. The compared result is shown to obtain good accuracy.

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The Control of Side Reactions in Bunsen Reaction Section of Sulfur-Iodine Hydrogen Production Process (황-요오드 수소 생산 공정의 분젠 반응 부분에서 부반응 제어)

  • Lee, Kwang-Jin;Hong, Dong-Woo;Kim, Young-Ho;Park, Chu-Sik;Bae, Ki-Kwang
    • Transactions of the Korean hydrogen and new energy society
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    • v.19 no.6
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    • pp.490-497
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    • 2008
  • For continuous operation of the sulfur-iodine(SI) thermochemical cycle, which is expected practical method for massive hydrogen production, suggesting operation conditions at steady state is very important. Especially, in the Bunsen reaction section, the Bunsen reaction as well as side reactions is occurring simultaneously. Therefore, we studied on the relation between the variation of compositions in product solution and side reactions. The experiments for Bunsen reaction were carried out in the temperature range, from 268 to 353 K, and in the $I_2/H_2O$ molar ratio of $0.094{\sim}0.297$ under a continuous flow of $SO_2$ gas. As the result, sulfur formed predominantly with increasing temperature and decreasing $I_2/H_2O$ molar ratios. The molar ratios of $H_2O/H_2SO_4$ and $HI/H_2SO_4$ in global system were decreased as the more side reaction occurred. A side reactions did not appear at $I_2/H_2O$ molar ratios, saturated with $I_2$, irrespective of the temperature change. We concluded that it caused by the increasing stability of an $I_{2x}H^+$ complex and a steric hindrance with increasing $I_2/HI$ molar ratios.

Fabrication and Post-Annealing Effects of Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$(SBT) Thin Films by MOD Process (MOD법에 의한 강유전성 $Sr_xBi_yTa_2O_{9+\alpha}$(SBT) 박막의 제조 및 후열처리 효과에 관한 연구)

  • 정병직;신동석;윤희성;김병호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.3
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    • pp.229-236
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    • 1998
  • Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

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Low Temperature Sintering and Piezoelectric Properties of PCW-PMN-PZT Ceramics with the Variation of Sintering Aids (소결조제 변화에 따른 PCW-PMN-PZT세라믹스의 저온소결 및 압전특성)

  • Chung, Kwang-Hyun;Lee, Duck-Chool;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.12
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    • pp.1320-1325
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    • 2004
  • In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PCW-PMN-PZT ceramics added with Li$_2$CO$_3$, Bi$_2$O$_3$ and CuO as sintering aids were manufactured, and their microstructural, dielectric and piezoelectric properties were investigated. When the only CuO was added, specimens could not be sintered below 98$0^{\circ}C$. However, when Li$_2$CO$_3$ and Bi$_2$O$_3$ were added, specimens could be sintered below 98$0^{\circ}C$. Li$_2$CO$_3$ and Bi$_2$O$_3$ addition were proved to lower sintering temperature of piezoelectric ceramics due to the effect of Li$_2$O-Bi$_2$O$_3$ liquid phase. Li$_2$CO$_3$ and Bi$_2$O$_3$ added specimens showed higher piezoelectric properties than those of the only CuO added specimens. At 0.2 wt% Li$_2$CO$_3$ and 0.3 wt% Bi$_2$O$_3$ added specimen sintered at 92$0^{\circ}C$, the dielectric constant of 1457, electromechanical coupling factor of 0.56 and mechanical quality factor of 1000 were shown, respectively. These values are suitable for multilayer piezoelectric transformer application.

Synthesis of FAU(Faujasite)-type Zeolite with Variation of Synthesis Condition (합성조건의 변화에 따른 FAU(Faujasite)형 제올라이트의 합성)

  • 임형미;김봉영;남중희;안병길;오성근;정상진
    • Journal of the Korean Ceramic Society
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    • v.40 no.2
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    • pp.132-138
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    • 2003
  • The effect of synthesis condition, type of starting materials, mole ratio, mixing. aging, and crystallization temperature and time, on the size of FAU-type zeolite has been studied. Different mixing route may lead to the different phase of zeolite even with the same starting materials. In general, the size of particles is smaller after aging, especially at lower aging temperature. Two step mixture gel preparation method resulted to not only the reduction of crystallization time but also that of particle size, but without the aging of two mixture gels before the preparation of the overall gel in the second step, only the crystallization time was reduced, not the particle size. The FAU-type zeolite with average particle size 0.4$\mu$m and BET surface area 838 $m^2$/g was obtained from starting materials of liquid sodium silicate, sodium aluminate, and sodium hydroxide with two step preparation of mixture gel, aging of the mixture gels in two steps, which effectively reduced the crystallization time and particle size.

Properties of Beta-Ga2O3 Film from the Furnace Oxidation of Freestanding GaN (FS-GaN을 열산화하여 제작된 Beta-Ga2O3 박막의 특성)

  • Son, Hoki;Lee, YoungJin;Lee, Mijai;Kim, Jin-Ho;Jeon, Dae-Woo;Hwang, Jonghee;Lee, Hae-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.7
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    • pp.427-431
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    • 2017
  • In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

Analysis on the Characteristics of National Assessment of Educational Achievement (NAEA) Items for Science Subject: With a Focus on Optics (국가수준 학업성취도 평가의 과학 문항 특성 분석 : 광학 내용을 중심으로)

  • Lee, Bongwoo;Lee, Inho
    • Journal of The Korean Association For Science Education
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    • v.35 no.3
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    • pp.465-475
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    • 2015
  • The purpose of this study is to analyze the results of physics (optics) in nationwide standardized assessment and to investigate middle-school students' characteristics of achievement by using an option response rate distribution curve. For this purpose, we analyzed the 10 optics problems from the National Assessment of Educational Achievement (NAEA) items for middle school science subject conducted in 2010-2013. The results of this study are as follows; First, students showed a little higher achievement in optics than classical mechanics and electromagnetism. Second, students achieved significantly worse in 'formation of image' in 'light' part and 'variation of phase in propagation of wave' in 'wave' part. Third, students showed a context-dependent problem solving strategy and result. Additionally, we suggested some implications about the readjustment of some optics concepts level of national science curriculum, the need for teaching and learning strategies for basic level students, and the need for teaching and learning strategies focused on the realistic context.

The Operating Characteristics of DBR-LD with Wavegudies Coupling Structure (도파로 결합 구조에 따른 DBR-LD의 동작특성)

  • 오수환;박문호
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.9
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    • pp.666-672
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    • 2003
  • In this paper, we described the fabrication and the performance of wavelength tunable distributed bragg reflector (DBR) laser diode (LD), having different waveguide coupling mechanisms; integrated-twin-guide (ITG) DBR-LD and butt coupled (BT) DBR-LD. This deviceis fabricated by metal organic vapor phase epitaxy (MOVPE) growth and planar buried heterostructure (PBH)-type transverse current confinement structure. The result of measurement, the optical performance of BT-DBR-LD is better over 2 times than that of ITG-DBR-LD at the variation of threshold current and output power, and slop efficiency due to the higher coupling efficiency of the butt coupled structure than the integrated twin guide structure. The maximum wavelength tuning range is about 7.2nm for ITG DBR-LD and 7.4nm for BT DBR-LD. Both types of lasers have a very high yield of single mode operation with a side-mode suppression ratio of more than 35dB.