• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1990년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 26-27 Oct. 1990
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• pp.1371-1376
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• 1990

The paper presents a method of constructing simple fuzzy control rules for the determination of stabilizing signals of automatic voltage regulator and governor, which are controllers of electric power systems. Fuzzy control rules are simplified by considering a coordinate transformation with the rotation angle .theta. on the phase plane, and by expanding the range of membership functions. Also, two rotation angles .theta. $_{1}$ and .theta. $_{2}$ are selected for the linearizable region and the nonlinear one of the system, respectively. Here, .theta. $_{1}$ is chosen by the pole assignment method, and .theta. $_{2}$ by a performance index. Fuzzy inference is applied to the connection of two rotation angles .theta. $_{1}$ and .theta. $_{1}$ by regarding the distance from the desired equilibrium point as a variable of condition parts. The control effect is demonstrated by an application of the proposed method to one-machine infinite-bus power system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.633-636
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• 1989

The simulation results of the third harmonic conversion with 1.064 um Nd :YAG laser using polarization mismatch method are reported. The third harmonic conversion efficiency was over 65% for the Gaussian incident pulse of $300{\sim}400MW/cm^2$ peak intensity, and over 80% for $3{\sim}4GW/cm^2$ peak intensity pulse. The dependence of the third harmonic conversion efficiency' on the variation of incident polarization angle ${\theta}_p$ and angular discrepancy ${\Delta}{\theta}$ of phase matched angle ${\theta}_m$ is discussed.

• 한국전자파학회논문지
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• 제22권9호
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• pp.840-846
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• 2011

본 논문에서는 EGS(Electromagnetic Gradient Surface) 구조의 반사 특성과 함께 RCS 특성을 입사파의 다양한 입사각과 편파에 따라 분석하였다. EGS에 입사되는 입사파의 입사각 ${\theta}_i$를 $0^{\circ}$에서 $50^{\circ}$까지 $10^{\circ}$ 간격으로 변화시켜가면서 수직 및 수평 편파를 고려하여 반사 특성 및 RCS 감소율을 비교 분석하였다. EGS의 입사각 ${\theta}_i$가 $0^{\circ}$로 입사하는 입사파의 경우엔 편파에 따른 반사 특성 및 RCS 감소율이 크게 차이가 나지 않았음을 확인하였으며, 입사파의 입사각의 크기가 커지게 될수록 편파에 따른 반사 특성의 차이가 더 크게 나타남을 보였다. RCS 특성의 경우, 입사파의 입사각의 크기가 커지게 되어도 EGS의 수직 방향에서의 RCS 감소율은 약 2 dB 차이를 보이며, 입사각과 편파에 따른 RCS 특성은 유지됨을 확인하였다.

• 대한조선학회논문집
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• 제47권4호
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• pp.508-516
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• 2010

This study aims at investigating the effect of the chamfer on the liquid sloshing in the three-dimensional (3D) rectangular tank. In order to simulate the 3D incompressible viscous two-phase flow in the 3D tank with partially filled liquid, the present study has adopted the volume of fluid (VOF) method based on the finitevolume method which has been well verified by comparing with the results of the relevant previous researches. The effects of the chamfering top corners of the tank on the liquid sloshing characteristics have been investigated. The angle of the chamfering top corners (${\theta}$) has been changed in the range of $0^{\circ}{\leq}{\theta}{\leq}60^{\circ}$(${\Delta}{\theta}=15^{\circ}$) to observe the free surface behavior, and the effect on wall impact load. Generally, as the angle of the chamfering top corners increases, the impact pressure on the upper knuckle point decreases. However it seemed that a critical angle of the chamfering top corners exists to reveal the lowest impact pressure on the wall.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.286-289
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• 2001

Single phase CuGaS$_2$ thin film with the highest diffraction peak of (112) at diffraction angle (2$\theta$) of 28.8$^{\circ}$ was made at substrate temperature of 7$0^{\circ}C$, annealing temperature of 35$0^{\circ}C$ and annealing time of 60 min. And second highest (204) peak was shown at diffraction angle (2$\theta$) of 49.1$^{\circ}$. Lattice constant of a and c of that CuGaS$_2$ thin film was 5.37 $\AA$ and 10.54 $\AA$ respectively. The greatest grain size of the thin film was about 1${\mu}{\textrm}{m}$. The (112) peak of single phase of CuGaS$_2$ thin film at annealing temperature of 35$0^{\circ}C$ with excess S supply was appeared with a little higher about 10 % than that of no exces S supply And the resistivity, mobility and hole density at room temperature of p-type CuGaS$_2$ thin film with best crystalline was 1.4 $\Omega$cm, 15 cm2/V . sec and 2.9$\times$10$^{17}$ cm$^{-3}$ respectively. It was known that carrier concentration had considerable effect than mobility on variety of resistivity of the fabricated CuGaS$_2$ thin film, and the polycrystalline CuGaS$_2$ thin films were made at these conditions were all p-type.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Transactions on Electrical and Electronic Materials
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• 제4권1호
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 추계학술대회
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• pp.111-112
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• 2017

This paper presents a novel three-port converter for the OnBoard Charger of Electric Vehicles by using an impedance control network. The proposed concept is suitable for charging a main battery and an auxiliary battery of an electric vehicle at the same time due to its power handling capability of the converter without additional switches. The power flow is managed by the phase angle (${\Theta}$) between the ports whereas voltage at each port is controlled by the asymmetric duty cycle and the phase shift (${\Phi}$) between the inverter lags controlled by the impedance control network. The proposed system has a capability of achieving zero voltage switching (ZVS) and zero current switching (ZCS) at all the switches over the wide range of input voltage, output voltage and output power. The feasibility of the proposed system is verified by the PSIM simulation.

• 조명전기설비학회논문지
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• 제17권1호
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• pp.94-102
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• 2003

본 논문은 고주파 전원에 사용되는 풀 브릿지 부하 병렬형 고주파 공진 인버터 회로를 연구대상으로 하고 출력제어기법으로는 펄스 주파수 변조(PFM, 펄스 폭 변조(PWM) 그리고 펄스 위상 변화(Phase-Shift)잎 경우를 비교 검토하였다. 회로의 해석은 정규화 파라메타를 도입하여 범용성 있게 기술하였고, 인버터 특성은 3가지 구동신호패턴에 의한 스위칭 주파수($\mu$), 펄스폭($\theta$d), Phase-Shift의 위상차각($\phi$)의 변화와 제 파라메타에 따라 특성 평가를 행하였다. 실험을 통해 이론해석의 타당성을 검증하였다. 향후, 3가지의 구동신호제어기법에 의한 특성들은 유도가열 응용, DC-DC 컨버터 등의 전원 시스템의 출력제어 시에 유용한 자료로 제공될 것으로 사료된다.