• Korean Chemical Engineering Research
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• v.55 no.5
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• pp.718-722
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• 2017

We have investigated the photocatalytic activity for the decomposition of methyl orange on the pure $LaCoO_3$ and metal ion doped $LaCoO_3$ perovskite-typeoxides prepared using microwave process. In the case of pure $LaCoO_3$ and cesium ion doped $LaCoO_3$ catalysts, the formation of the perovskite crystalline phase was confirmed regardless of the preparation method. From the results of UV-Vis DRS, the pure $LaCoO_3$ and cesium ion doped $LaCoO_3$ catalysts have the similar absorption spectrum up to visible region. The chemisorbed oxygen plays an important role on the photocatalytic decomposition of methyl orange and the higher the contents of chemisorbed oxygen, the better performance of photocatalyst.

• Journal of Integrative Natural Science
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• v.8 no.4
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• pp.244-249
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• 2015

The PZT thin films were deposited on Si(100) substrate using RF magnetron sputtering method. And the PZT thin films were post annealed at various temperatures to form perovskite phase. To analyze PZT thin films, surface profiler, XRD, XPS, CA, and SFE were used. The thickness increased from 536.5 to 833.2 nm as post annealing temperature increased. The perovskite PZT was observed from PZT-823 and pyrochlore PZT, $ZrO_2$, $TiO_2$, and perovskite $PbZrO_3$ were observed. From the XPS, the atomic percentages of Pb, Zr, Ti, and O were calculated and the portion of Pb increased to PZT-823 and decreased to PZT-923 and then increased to PZT-1023. Also, the CA and SFE was effected on post annealing temperature and as a function of atomic percentage of Pb, the CA and SFE was transformed.

• Journal of the Korean Ceramic Society
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• v.44 no.10
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• pp.537-541
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• 2007

Microwave dielectric properties of $0.95 Ca_{0.85}Nd_{0.1}TiO_3-0.05LnAlO_3$ (Ln=Sm, DH, Er) were investigated as a function of sintering temperature and lanthanide ion type. A single perovskite phase with an orthorhombic structure was obtained throughout the entire range of composition. The dielectric constant (K) was dependent upon the dielectric polarizabilities and the B-site bond valence in the $ABO_3$ perovskite structure. The quality factor (Qf) of the specimens with $ErAlO_3$ was smaller than those with $SmAlO_3\;and/or\;DyAlO_3$ due to the smaller grain size. The temperature coefficient of resonant frequency (TCF) could be controlled from $107.28ppm/^{\circ}C$ at Ln=Sm to $87.23ppm/^{\circ}C$ at Ln=Er due to the changes of B-site bond valence in the $ABO_3$ perovskite structure.

• Advances in materials Research
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• v.7 no.1
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• pp.73-81
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• 2018

$TiO_2/CH_3NH_3Pb_{1-x}Sb_xI_{3-3x}Br_{3x}-based$ photovoltaic devices were fabricated by a spin-coating method using mixture solutions with $SbBr_3$. Effects of $SbBr3$, CsI or RbBr addition to $CH_3NH_3PbI_3$ precursor solutions on the photovoltaic properties where investigated. The short-circuit current densities and photoconversion efficiencies were improved by adding a small amount of $SbBr_3$, CsI or RbBr to the perovskite phase, which would be due to the doping effect of Sb, Br and Cs/Rb atom at the Pb, I and $CH_3NH3$ sites, respectively.

• Journal of Powder Materials
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• v.17 no.2
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• pp.101-106
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• 2010

In this study, we successfully synthesized a nano-sized lanthanum-modified lead-titanate (PLT) powder with a perovskite structure using a high-energy mechanochemical process (MCP). In addition, the sintering behavior of synthesized PLT nanopowder was investigated and the sintering temperature that can make the full dense PLT specimen decreased to below $1050^{\circ}C$ by using $Bi_2O_3$ powder as sintering agent. The pure PLT phase of perovskite structure was formed after MCP was conducted for 4 h and the average size of the particles was approximately 20 nm. After sintered at 1050 and $1150^{\circ}C$, the relative density of PLT was about 93.84 and 95.78%, respectively. The density of PLT increased with adding $Bi_2O_3$ and the specimen with the relative densitiy over 96% were fabricated below $1050^{\circ}C$ when 2 wt% of $Bi_2O_3$ was added.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.297-302
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• 2011

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing $O_2$ mixing ratio. At about 25% $O_2$ mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than $600^{\circ}C$, the PZT thin films become a perovskite phase. At the annealing temperature of $700^{\circ}C$, perovskite PZT thin films with good quality structure was obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.1-6
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• 2002

The preparation of 0.9PMN-0.1PT ceramics by the metal alkoxide method and the effect of excess $Mg(OC_2H_5)_2$, $Pb(CH_3COO)_2{\cdot}3H_2O$ are reported. The excess$ Mg(OC_2H5)_2$ addition signficantly affects the rate of perovskite phase formation in 0.9PMN-0.1PT ceramics. The sample by addition of 5 wt% excess $Mg(OC_2H5)_2$ sintered at $1150^{\circ}C$ for 1 hr obtained perovskite single phase and showed 98% of the theoretical density. The dielectric constant of the pellets sintered at $1150^{\circ}C$ was increased by the addition of 5 wt% excess $Mg(OC_2H_5)_2$ and had a maximum value of 15000 at 1 kHz.

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.335-343
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• 2019

In this study, $Sr_2Ni_{1.8}Mo_{0.2}O_{6-{\delta}}$ (SNM) with a double perovskite structure was investigated as an alternative anode for use in the $CH_4$ fuel in solid oxide fuel cells. SNM demonstrates a double perovskite phase over $600^{\circ}C$ and marginal crystallization at higher temperatures. The Ni nanoparticles were exsolved from the SNM anode during the fabrication process. As the SNM anode demonstrates poor electrochemical and electro-catalytic properties in the $H_2$ and $CH_4$ fuels, it was modified by applying a samarium-doped ceria (SDC) coating on its surface to improve the cell performance. As a result of this SDC modification, the cell performance improved from $39.4mW/cm^2$ to $117.7mW/cm^2$ in $H_2$ and from $15.9mW/cm^2$ to $66.6mW/cm^2$ in $CH_4$ at $850^{\circ}C$. The mixed ionic and electronic conductive property of the SDC provided electrochemical oxidation sites that are beyond the triple boundary phase sites in the SNM anode. In addition, the carbon deposition on the SDC thin layer was minimized due to the SDC's excellent oxygen ion conductivity.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.49-52
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• 2009

Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around $660^{\circ}C$. The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at $1450^{\circ}C$ were about $1.6{\mu}m$ and $45{\mu}m$, respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at $1450^{\circ}C$ the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.