• Journal of Sensor Science and Technology
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• v.29 no.1
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• pp.7-13
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• 2020

Dielectric capacitors are integral components in electronic devices that protect the electric circuit by providing modulated steady voltage. Explosive growth of the electric automobile market has resulted in an increasing demand for dielectric capacitors that can operate at temperatures as high as 400 ℃. To surpass the operation temperature limit of currently available commercial capacitors that operate in temperatures up to 125 ℃, Bi_1/2Na_1/2TiO₃ (BNT), which has a large temperature-insensitive dielectric response with a maximum dielectric permittivity temperature of 300 ℃, was selected. By introducing an intentional A-site cation deficiency and post-heat treatment, we successfully manage to control the dielectric properties of BNT to use it for high-temperature applications. The key feature of this new BNT is remarkable reduction in dielectric loss (0.36 to 0.018) at high temperature (300 ℃). Structural, dielectric, and electrical properties of this newly developed BNT were systematically investigated to understand the underlying mechanism.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.525-530
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• 2011

We investigated the electrical properties the starting material and sintering condition on the laminated PTC thermistor for micro circuit protection. The influences of $BaTiO_3$ powder with the 0.3 and 0.45 ${\mu}m$ size and the electrical characteristics (Ba,Sr)$TiO_3$ sintered at 1350~1400$^{\circ}C$ for 2 h in a reducing atmosphere (1% $H_2/N_2$). The sintered (Ba,Sr)$TiO_3$ was increased pore and the grain size was decreased according to increasing Sr additions. In relative permittivity, the phase transition temperature of (Ba,Sr)$TiO_3$ was decreased for 2.5$^{\circ}C$ according to increasing 0.01 mole Sr additions, and the phase transition dose not appeared about 0.3 mole Sr addition. The (Ba,Sr)$TiO_3$ was show the low resistance from 0.01 mole to 0.05 mole by Sr addition, regardless of sintering temperature. The (Ba,Sr)$TiO_3$ was show $10^2$ jump order at 0.1 and 0.2 mole Sr addition, and PTCR of the sintered $(Ba_{0.7}Sr_{0.3})TiO_3$ does not appeared about 0.3 mole Sr addition, regardless of the sintering temperature and starting material size.

• Journal of the Korean Ceramic Society
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• v.45 no.7
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• pp.411-417
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• 2008

Aerosol Deposition Method (ADM) is a novel technique to grow ceramic thick films with high density and nano-crystal structure at room temperature. $^{1,2)}$ For these unique advantages of ADM, it would be applied to the fabrication process of 3-D integration ceramic modules effectively. However, it is critical to control the properties of starting powders, because a film formation through ADM is achieved by impaction and consolidation of starting powders on the substrates. We fabricated alumina thick films by ADM for the application to integral substrates for RF modules. When the as-received alumina powders were used as a starting material without any treatments, it was observed that the dielectric properties of as-deposited alumina films, such as relative permittivity and loss tangent, showed high dependency on the frequency. In this study, some techniques of powder pre-treatments to improve the dielectric properties of alumina thick films will be shown and the effects of starting powders on the properties of AD films will be discussed.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.1
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• pp.37-46
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• 2003

The transient responses on arbitrarily interconnected digital transmission lines are analyzed by an efficient node discretization technique. Since the proposed node discretization technique offers an efficient means to discretize transmission lines, the transient waveform at any position on the arbitrarily interconnected lines is easily predicted. Dispersive microstrip multiconductor transmission lines arbitrarily connected are analized for generality. The derivation of frequency-dependent equivalent circuit elements of coupled transmission lines have been carried out by the spectral domain approach(SDA). The effects of variations of excited pulse width on the crosstalks of the high-speed microstrip coupled-lines are also investigated. It has been well known that the crosstalk spike level is monotonously increased when the coupling length and effective permittivity of substrate are increased. In this paper, it is found that the variations of crosstalk level are not further monotonous as shortening the exciting pulse width toward several picosecond. The results are verified by the generalized S-parameter technique.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.5
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• pp.9-15
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• 2001

This paper describes measurement method of dielectric properties of dielectric materials using cylindrical cavity resonator's. Dielectric properties of concern here are relative permittivity, loss- tangent, quality factor and so on. An analysis of $TE_{011}$mode in dielectric properties of concentric dielectric-rod inserted cylindrical cavity resonator is presented. The frequency variation by the air gap at $TE_{011}$ mode turns out to be the least sensitive. A technique using a $TE_{011}$ mode of concentric dielectric-rod inserted cylindrical cavity resonator and an exact field representation of neo non-decaying mode are introduced for measurement of dielectric properties.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.9
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• pp.872-879
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• 2004

The TX/RX broadband L-type circular polarization antenna using LTCC(Low Temperature Co-fired Ceramic) for satellite communication at K, Ka band(20～21 GHz/30～31 GHz) has been presented. This antenna has been analyzed in compensation for LTCC with relative permittivity 5.2 and could have been integrated with RF component. Also antennas on LTCC enable :o reduce loss of RF system due to integrate with RF circuits and to light weight, and thus, generally one can reduce size of the RF system. As the geometry of this antenna presented is made simple by L type of monopole antenna, it is easily manufactured by LTCC progress and enables to reduce loss.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1367-1374
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• 2008

A new high-gain Fabry-$P{\acute{e}}rot$ cavity antenna for wireless broadband internet(Wibro) base station antennas, which is covered with metamaterial superstrate presenting simultaneous negative values of permittivity and permeability, is proposed. To facilitate the fabrication process using the printed circuit board(PCB) technology of today, a new planar-type metamaterial superstrate is designed, which shows negative and low positive values of a refractive index near the Wibro service frequency band. And the principle of antenna gain enhancement is analyzed from the two different view points of effectively low refractive index and of the Fabry-$P{\acute{e}}rot$ resonance condition. Single square patch antenna is used as a feeder. The separation distance is determined by considering the reflection phases of the metamaterial superstrate and the substrate satisfying Fabry-$P{\acute{e}}rot$ resonance condition, respectively. Comparison between the prediction and the measurement shows good agreement, which verifies the validity of our design approach.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.1023-1029
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• 2010

In this paper, we proposed the broadband polarization diversity antenna operating in the PCS, WCDMA and WiBro band for mobile base station. We designed the antenna using the dipole antenna of the square loop type and microstrip feeding structure. Additionally, we used the choke box to remove the distortion of radiation patterns by the reflector structure when operating broadband. The simulation was performed using MWS in a commercial tool of CST company and the antenna was fabricated on a teflon substrate with 3.33 of the relative permittivity. The proposed antenna has the bandwidth of 640 MHz(from 1.75 to 2.39 GHz) when VSWR is below 1.5. At the operating bands, the interisolation between the cross-pair radiators is less than -25 dB and the maximum gains for PCS, WCDMA and WiBro band are 8.9, 8.2 and 8.6 dBi, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.6
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• pp.595-601
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• 2013

This paper presents an optimized design of a millimeter-wave on-chip dipole antenna using CMOS process. The serious flaw of the antenna using CMOS process is low radiation efficiency because of high permittivity and conductivity. To overcome the weakness, we need to widen radiation area in air and optimize distance between an antenna and a reflector. The radiation efficiency and bandwidth of the designed antenna are respectively 16.5 % and 22.3 % at 80 GHz. Systematic methods are attempt to analyze an effect on the antenna radiation efficiency. To widen radiation area in air, substrate cut angle and distance between the antenna and chip edge are adjusted. In addition, to optimize distance between an antenna and reflector, substrate thickness and distance between the antenna and a circuit ground plane are adjusted.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.10-15
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• 2015

A thin-film transmission line (TFTL) employing a microstrip line/coplanar waveguide (ML/CPW) was fabricated on a silicon substrate for application to a miniaturized on-chip RF component, and the RF characteristics of the device with the proposed structure were investigated. The TFTL employing a ML/CPW composite structure exhibited a shorter wavelength than that of a conventional coplanar waveguide and that of a thin-film microstrip line. When the TFTL with the proposed structure was fabricated to have a length of ${\lambda}/8$, it showed a loss of less than 1.12 dB at up to 30 GHz. The improvement in the periodic capacitance of the TFTL caused for the propagation constant, ${\beta}$, and the effective permittivity, ${\varepsilon}_{eff}$, to have values higher than those of a device with only a conventional coplanar waveguide and a thin film microstrip line. The TFTL with the proposed structure showed a ${\beta}$ of 0.53~2.96 rad/mm and an ${\varepsilon}_{eff}$ of 22.3~25.3 when operating from 5 to 30 GHz. A highly miniaturized impedance transformer was fabricated on a silicon substrate using the proposed TFTL for application to a low-impedance transformation for broadband. The size of the impedance transformer was 0.01 mm2, which is only 1.04% of the size of a transformer fabricated using a conventional coplanar waveguide on a silicon substrate. The impedance transformer showed excellent RF performance for broadband.