• Publications of The Korean Astronomical Society
• /
• v.30 no.2
• /
• pp.61-64
• /
• 2015

The brightness of Io's magnetic footprint, an indicator of electromagnetic interaction at the satellite, appears to be strongly connected to the satellite's distance from the plasma equator. As a result, the brightest footprints were detected when Io is near the interception location between the satellite's orbital plane and the plasma equator. However, volcanic activities on Io show strong correlation with the equatorward shift of Jupiter's main auroral oval, consequently causing the disappearance of Io's footprint. The same conclusion was suggested via the observation of Jupiter's hectometric radio emission, called HOM, which closely corresponds to Jupiter's auroral activity. The plasma environment near the Jovian satellites was found to vary significantly at different observational epochs. The electron density increased by approximately a factor of three from the Voyager epoch (1979) to the Galileo epoch (1995), while the electron density was found to be significantly higher (~ 5 times) in the Cassini epoch (2001). In this current study, the magnetic footprints were clearly brighter ten years ago (from peak brightness in 1998-2001) than the footprints detected in 2007. For volcanic activities on Io in 2007, there are two clear activities in February and late May. The magnetic footprint appeared to be dimmer in March 2007, expected to be the result of volcano activities in Feb 2007. However, the magnetic footprint brightness in June appeared to be slightly brighter than the footprints observed in May. The reason could be the time delay between the brightening of the sodium nebula on approximately May 31st and, a while later, the enhancement of flux tube content peaking on approximately June 5th. On the other hand, Io's magnetic footprints were observed during June 1st - 10th when they may not yet have been affected by the increase in mass outflow due to the increase of plasma density.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.17 no.5
• /
• pp.767-774
• /
• 2022

In this paper raw spectrum data were analyzed to suggest the moving forward of performance evaluation and quality control of wind profilers of four manufacturers operating in South Korea. For the analysis, the profile of the spectrum averaged by season and the profile of four statistical values (minimum, average, median, and maximum) calculated by Power Spectrum Density (PSD) were used. The quality of spectrum data was the best for LAP-3000, followed by YKJ3, PCL-1300, and CLC-11-H. In Cheorwon and Chupungnyeong, where PCL-1300 was installed, the variability of the spectrum due to ground clutter and non-meteorological signals was large, so ground clutter removal and signal processing such as moving average and multi-peak were required. In Gunsan and Paju, where CLC-11-H was installed, DC (Direct Current) bias and propagation folding were found, so it is necessary to remove the DC bias and limit the effective altitude for observation.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.2
• /
• pp.96-113
• /
• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Journal of the Semiconductor & Display Technology
• /
• v.6 no.2 s.19
• /
• pp.11-14
• /
• 2007

For the fabrication of blue color organic light emitting diodes(OLED) with a high performance, 2-TNATA [4,4',4"-tris (2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB [N,N'-bis (1-naphthyl) -N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by the vacuum thermal evaporation. After then, blue color emission layer was deposited using TPM-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl)phosphonate] and GDI602 as a light emitting organic material. Finally, the two kinds of OLEDs with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al and ITO/2-TNATA/NPB/GDI602/Alq_3/LiF/Al$ were prepared by in-situ deposition. The maximum current density and luminance were found to be about $588\;mA/cm^2\;and\;5239\;cd/m^2$ at 12V for the OLED sample with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al$. Color coordinate of blue OLED was x=0.18, y=0.18 (at llV) and the maximum current efficiency was 2.82 cd/A (at 6V) with the peak emission wavelength of 440 nm.

• Transactions of the Korean hydrogen and new energy society
• /
• v.33 no.6
• /
• pp.743-748
• /
• 2022

The initial operation stability of hydrogen-fueled, solid oxide fuel cell with Ni thin-film anode fabricated by direct current sputtering was evaluated in terms of electrochemical properties such as peak power density, open circuit voltage, overpotential, and alternating current impedance at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.18 no.2
• /
• pp.53-64
• /
• 2013

This study analyzed the ADCP records along with wind by KMA and discharge records at Seosan A-, B-district tide embankment by KRC for 33 days obtained in the Chunsu Bay, Yellow Sea, Korea spanning from July 29 to August 30, 2010. Various analyses include descriptive statistics, harmonic analysis of tidal constituents, spectra and coherence, complex correlation, progressive vector diagram and cumulative curves to understand the tidal and sub-tidal current characteristics caused by local wind and discharge effect. Observed current speed ranges from -30 to 40 (cm/sec), with standard deviation from 1.7 (cm/sec) at bottom to 18.7 (cm/sec) at surface. According to the harmonic analysis results, the tidal current direction show NNW-SSE. The magnitudes of semi-major axes range from 9.4 to 14.8 (cm/sec) for M2 harmonic constituent and from 4.4 to 7.0 (cm/sec) for S2, respectively. And the magnitudes of semi-minor axes range from 0.1 to 0.5 (cm/sec) for M2 and from 0.4 to 1.4 (cm/sec) for S2, respectively. In the spectral analysis results in the frequency domain, we found 3~6 significant spectral peaks for band-passed wind and residual current of all depth. These peak periods represent various periodicities ranging from 2 to 8 (days). In the coherency analysis results between band-passed wind and residual current of all depth, several significant coherencies could be resolved in 3~5 periodicities within 2.8 (days). Highest coherency peak occurred at 4.6 (day) with 1.2-day phase lag of discharge to band-passed residual current. The progressive vector of wind and residual current travelled to northward at all layers, and the travel distance at middle layer was greater than surface layer distance. The Northward residual current was caused by a seasonal southern wind, and the density-driven current formed by fresh water input effected southward residual current. The sub-tidal current characteristics is determined by seasonal wind force and fresh water inflow in the Chunsu Bay, Yellow Sea, Korea.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.11
• /
• pp.765-770
• /
• 2001

Metal-ferroelectric-insulator- semiconductor(MFTS) devices by using rapid thermal annealed (RTA) LiNbO$_3$/AIN/Si(100) structures were successfully fabricated and demonstrated nonvolatile memory operations. Metal-insulator-semiconductor(MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2 V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/$\textrm{cm}^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8 V, 50 % duty cycle) in the 500 kHz.

• Journal of the Korean Electrochemical Society
• /
• v.2 no.2
• /
• pp.93-97
• /
• 1999

From the anodic peak currents of cyclic voltammograms for Ag(I)/Ag(II) couple obtained with the variation of nitric acid concentration, Ag(I) concentration and solution temperature at a Pt electrode in concentrated nitric acid solutions, the diffusion coefficients of Ag(I) ion were evaluated to estimate the limiting current density of Ag(II)-mediated electrochemical oxidation (MEO) process, which has been effectively used for the complete destruction of hazardous organic materials. The results showed that, due to the water decomposition reaction which occurred simultaneously with the Ag(I) ion oxidation, background subtractions for the cyclic voltammograms were required to estimate the correct peak currents. The empirical relationship for the diffusion coefficient of Ag(I) was suggested as a function of solution viscosity and temperature.

• Journal of the Korean Vacuum Society
• /
• v.11 no.3
• /
• pp.135-140
• /
• 2002

In this paper, We deposited the BST thin-film on p-type (100)Si, (100)MgO and MgO/Si substrates respectively using RF magnetron sputtering method. After the BST thin-fil m was deposited, we performed RTA(rapid thermal anneal) at $600^{\circ}C$, oxygen atmosphere and 1 min. In the XRD measurement, we observed the (110) $Ba_{0.5}Sr_{0.5}TiO_3$ main peak in all samples and the peak intensity increased after post annealing. Then we manufactured a capacitor using Al Electrode and measured I-V, C-V. In C-V measurement result values for each substrate, dielectric constant was calculated 120 (bare Si), 305(MgO/Si), 310(MgO) respectively. A leakage current density was present less than 1 $\mu\textrm{A/cm}^2$ at applied fields below 0.3 MV/cm. In conclusion we confirmed that MgO/Si substrates give good results for BST thin-film deposition.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.19 no.6
• /
• pp.411-419
• /
• 1999

It has been well recognized that a long term service at elevated temperature of $350^{\circ}C{\sim}550^{\circ}C$ induces embrittlement damage due to carbide precipitation and/or P, Sb and Sn segregation at grain boundaries and thereby deteriorates the grain boundary strength of heat resisting components in the energy-related plants. Therefore, it is very important to assess quantitatively the extent of embrittlement damage of heat resisting components to secure the reliable and efficient service condition and to prevent brittle failure in service. However, because fracture tests are limited in size and number of specimen obtained from the structural components, nondestructive test method is required. In this study, the optimum electrochemical parameters are investigated and discussed to evaluate nondestructive embrittlement damage for aged 2.25Cr-1Mo steels by means of electrochemical polarization test method (ECPTM) in proper corrosive environment. In addition, the electrochemical test results are compared with embrittlement degree evaluated by semi-nondestructive SP test.