• Current Optics and Photonics
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• v.7 no.1
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• pp.47-53
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• 2023

We propose a centralized passive-optical-network monitoring scheme using the resonance-spectrum properties of a Fabry-Perot cavity based on fiber Bragg gratings. Each cavity consists of two identical uniform fiber Bragg gratings and a varying cavity length or grating length, which can produce a unique single-mode resonance spectrum for the drop-fiber link. The output spectral properties of each cavity can be easily adjusted by the cavity length or the grating length. The resonance spectrum for each cavity is calculated by the transfer-matrix method. To obtain the peak wavelength of the resonance spectrum more accurately, the effective cavity length is introduced. Each drop fiber with a specific resonance spectrum distinguishes between the peak wavelength or linewidth. We also investigate parameters such as reflectivity and bandwidth, which determine the basic performance of the fiber Bragg grating used, and thus the output-spectrum properties of the Fabry-Perot cavity. The feasibility of the proposed scheme is verified using the Optisystem software for a simplified 1 × 8 passive optical network. The proposed scheme provides a simple, effective solution for passive-optical-network monitoring, especially for a high-density network with small end-user distance difference.

• Journal of Energy Engineering
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• v.20 no.3
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• pp.178-184
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• 2011

Compressed Air Energy Storage (CAES) is a combination of energy storage and generation by storing compressed air using off-peak power for generation at times of peak demand. In general, both charging and discharging of high-pressure vessel are unsteady processes, where the pressure is varying. These varying conditions result in low efficiencies of compression and expansion. In this paper, a new constant-pressure CAES system to overcome the current problem is proposed. An energy analysis of the system based on the concept of exergy was performed to evaluate the energy density and efficiency of the system in comparison with the conventional CAES system. The new constant-pressure CAES system combined with pumped hydro storage requires the smaller cavern with only half of the storage volume for variable-pressure CAES and has a higher efficiency of system.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• Structural Monitoring and Maintenance
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• v.4 no.1
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• pp.1-15
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• 2017

Installation of sensors networks for continuous in-service monitoring of structures and their efficiency conditions is a current research trend of paramount interest. On-line monitoring systems could be strategically useful for road infrastructures, which are expected to perform efficiently and be self-diagnostic, also in emergency scenarios. This work researches damage detection in composite concrete-steel structures that are typical for highway overpasses and bridges. The techniques herein proposed assume that typical damage in the deck occurs in form of delamination and cracking, and that it affects the peak power spectral density of dynamic curvature. The investigation is performed by combining results of measurements collected by long-gauge fiber optic strain sensors installed on monitored structure and a statistic approach. A finite element model has been also prepared and validated for deepening peculiar aspects of the investigation and the availability of the method. The proposed method for real time applications is able to detect a documented unusual behavior (e.g., damage or deterioration) through long-gauge fiber optic strain sensors measurements and a probabilistic study of the dynamic curvature power spectral density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.977-982
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• 2005

Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at $900^{\circ}C$, $N_2$ atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was $10^{-10}\;A/cm^2$ order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, $D_{it}$, was evaluated as $5.3\times10^{10}\;eV^{-1}cm^{-2}$ at (Ec-0.85) eV.

• Composites Research
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• v.31 no.6
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• pp.365-370
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• 2018

One of the critical parameters to improve the output power for triboelectric nanogenerators (TENGs) is the surface charge density. In this work, we modify the tribo-material of TENG by introducing the $TiO_x$ embedded Polydimethylsiloxane (PDMS) in anatase and rutile phase. The effect of dielectric constant and electronic structure of the $TiO_x$ on the capacitance of TENG and the output power as well are discussed. The surface charge density is increased as the control of the dielectric constant in difference weight percent of $TiO_x$ and PDMS. As the results of that, the 5% $TiO_x$ rutile phase and 7% $TiO_x$ anatase phase embedded PDMS exhibit the highest TENG output. The peak value of voltage/current obtained from $TiO_x$ rutile and anatase phase are ${\sim}180V/8.2{\mu}A$ and $211.6V/8.7{\mu}A$, respectively, at the external force of 5 N and working frequency of 5 Hz, which gives over 12-fold and 15-fold power enhancement compared with the TENG based on the pristine PDMS film. This study provides a better understanding for TENG performance enhancement from the materials view.

• Nuclear Engineering and Technology
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• v.55 no.11
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• pp.4213-4227
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• 2023

Computer Automated Radioactive Particle Tracking (CARPT) technique has been successfully utilized to measure the velocity profiles and mixing parameters in different multiphase flow systems where a single radioactive tracer is used to track the tagged phase. However, many industrial processes use a wide range of particles with different physical properties where solid particles could vary in size, shape and density. For application in such systems, the capability of current single tracer CARPT can be advanced to track more than one particle simultaneously. Tracking multiple particles will thus enable to track the motion of particles of different size shape and density, determine segregation of particles and probing particle interactions. In this work, a newly developed Multiple Radioactive Particle Tracking technique (M-RPT) used to track two different radioactive tracers is demonstrated. The M-RPT electronics was developed that can differentiate between gamma counts obtained from the different radioactive tracers on the basis of their gamma energy peak. The M-RPT technique was validated by tracking two stationary and moving particles (Sc-46 and Co-60) simultaneously. Finally, M-RPT was successfully implemented to track two phases, solid and liquid, simultaneously in three phase slurry bubble column reactors.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.356-360
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• 2001

Properties of a free-standing diamond wafer with a diameter of 80 mm and a thickness of 900~950 $mu extrm{m}$ deposited by the multi-cathode direct current plasma assisted chemical vapor deposition (MCDC PACVD) method were investigated. Defects of the diamond film were observed by optical transmission microscopy and its crystallinity was characterized by Raman and IR spectroscopy. Defects were distributed partially on boundaries of the grain. In the grain, (111) plane contained a higher defect density than that on (100) plane. FWHM of Raman diamond peak and IR transmission at 10.6 $\mu\textrm{m}$ were 4.6 $\textrm{cm}^{-1}$ /~5.3 $\textrm{cm}^{-1}$ and 51.7 ~ 61.9 %, and their uniformity was $\pm$7% and $\pm$9%, respectively. The diamond quality decreased with going from center to edge of the wafer.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Journal of the Semiconductor & Display Technology
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• v.11 no.3
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• pp.33-37
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• 2012

Simple and high efficiency blue organic light-emitting diodes with three organic layers of N, N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD]/1,1-bis-(di-4-polya-minophenyl)cyclohexane[TAPC]/electron transport material [ET-137] were fabricated and their electroluminescent characteristics were evaluated according to the TAPC thickness variation in a range of $50{\sim}300{\AA}$. Electroluminescence spectra of the devices with structure of DNTPD/TAPC/ET-137 showed all the same central emission wavelengths of 455 nm under an applied voltage of 7V, which were similar with that of the device with ET-137 only. On the other hand, the electroluminescence spectra of the device with structure of DNTPD/ET-137 without TAPC layer showed double emission peaks at the wavelengths of 455 nm and 561 nm under an applied voltage of 7V. In the devices with structure of DNTPD/TAPC/ET-137, single peak blue emission was not maintained in the device with $50{\AA}$-thick TAPC above 8V by the formation of exciplex. In the device with $300{\AA}$-thick TAPC, however, single peak blue emission was maintained until 10 V. According to the thickness increase of TAPC in the fabricated devices, the current density and luminance decreased, but the luminous efficiency and roll-off characteristics were improved.