• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.33-39
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• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.145-145
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• 2000

M-CeO2 (M : noble metal) catalysts have been widely studied as three-way catalysts and methanol synthesis catalysts. Ceria is thought to play a number of roles in these catalysts. The Ce(IV)/Ce(III) redox pair may store/release gases under oxidizing/reducing conditions, extending the operational window. Additionally, metal-ceria interactions lead to several effects, including the dispersion of the active components and promoting the activation of molecules such as CO or NO. Pd is a promising component to current TWC formulations and behaves particularly well when compared with Pt and Rh-based catalysts for low-temperature oxidation of Co and hydrocarbon. However the effect of Pd-ceria interactions on the physicochemical properties of Pd and the redox properties of Ce is not elucidated yet. In order to know exactly about the metal-ceria interactions, the model study are expecting to give a better environment, resulting in the wide use of the surface science tools. The substrate was Si(100) wafer, on which Ta metal was sputtered as a thickness of 100nm. The CeO2 thin film of 30nm was deposited by using the magnetron sputtering. Spin coating and magnetron sputtering methods were used to make the Pd thin film layer. The prepared sample was investigated by in-situ XPS, AES, SEM and AFM analysis.

• Tuberculosis and Respiratory Diseases
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• v.65 no.4
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• pp.343-350
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• 2008

PD-L1 is expressed in a variety of antigen-presenting cells and provides T cell tolerance via ligation with its receptor PD-1 and B7-1 on T cells. Stimulation with lipopolysaccharide (LPS) can increase the level of PD-L1 expression in B cells and macrophages, which suggests that this molecule plays a role in the immunosuppression observed in severe sepsis. The aim of this study was to identify which of the downstream pathways of TLR4 are involved in the up-regulation of PD-L1 by LPS in macrophages. Flow cytometry was used to examine the expression of PD-L1 in RAW 264.7 macrophages stimulated with LPS. The following chemical inhibitors were used to evaluate the role of each pathway: LY294002 for PI3K/Akt, SB202190 for p38 MAPK, and U0126 for MEK. LPS induced the expression of PD-L1 in a time- and dose-dependent manner. Transfection of siRNA for TLR4 suppressed the induction of PD-L1. Pretreatment with LY294002 and SB202190 decreased the level of PD-L1 expression but U0126 did not. Overall, the PI3K/Akt and p38 MAPK pathways are involved in the up-regulation of PD-L1 expression in RAW 264.7 macrophages stimulated with LPS.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.195-200
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• 2018

This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are $350^{\circ}C$-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of $400^{\circ}C$-180minutes and $500^{\circ}C$-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as $Al_3Ti$ and $Ti_7Al_5Si_{12}$.

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.7-11
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• 2013

We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.

• Journal of Korean Society for Quality Management
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• v.28 no.2
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• pp.103-122
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• 2000

Process capability indices (PCI) $C_p\;C_{pk},\;C_m,\;and\;C_{pmk}$ are widely used to evaluate the process performance. The PCI's have been evolved to consider the 'off targetness' more adequately. However, all of these indices are found to be inconsistent with the proportion of nonconforming items, in some cases. That is, the PCI for a process may result in higher value even when the proportion of defectives increases. For these reasons, we propose a new capability index, $c_{pd}$, which is consistent with the defect rate. The characteristics of the new PCI, $c_{pd}$ are investigated with respect to the existing PCI's. Some statistical properties of an estimator for $c_{pd}$ are also investigated by a Monte Carlo simulation. Sensitivity study under minor deviation from normality is also performed to show the robustness of $c_{pd}$. A good estimator for $c_{pd}$ is under study.

• Applied Chemistry for Engineering
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• v.21 no.6
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• pp.648-652
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• 2010

Catalytic activities of the partial oxidation of methane (POM) to hydrogen were investigated over Pd(5)/Ti-SPK and Pd(5)/Zr-SPK in a fixed bed flow reactor (FBFR) under atmosphere, and the catalysts were characterized by BET, XPS, XRD. The BET surface areas, pore volume and pore width of Horvath-Kawaze, micro pore area and volume of t-plot of Pd(5)/Ti-SPK and Pd(5)/Zr-SPK were $284m^2/g$, $0.233cm^3/g$, 3.9 nm, $30m^2/g$, $0.015cm^3/g$ and $396m^2/g$, $0.324cm^3/g$, 3.7nm, $119m^2/g$, $0.055cm^3/g$, repectively. The nitrogen adsorption isotherms were type IV with hysteresis. XPS showed that Si 2p and O 1s core electronlevels of Ti-SPK and Zr-SPK substituted Ti and Zr shifted to slightly lower binding energies than SPK. The oxidation states of Pd on the surface of catalysts were $Pd^0$ and $Pd^{+2}$. XRD patterns showed that crystal structures of fresh catalyst changed amorphous into crystal phase after reaction. The conversion and selectivity of POM to hydrogen over Pd(5)/Ti-SPK and Pd(5)/Zr-SPK were 77, 84% and 78, 72%, respectively, at 973 K, $CH_4/O_2$ = 2, GHSV = $8.4{\times}10^4mL/g_{cat}{\cdot}h$ and were kept constant even after 3 days in stream. These results confirm superior activity, thermal stability, and physicochemical properties of catalyst in POM to hydrogen.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.368-373
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• 2001

Pd/Si/Ti/Pt ohmic contact to n-type InGaAs was investigated. As-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$ for 10 seconds. However, the specific contact resistivity decreased remarkably to $1.7\times10^{-6}\Omega\textrm{cm}^2$ and $2\times10^{-6}\Omega\textrm{cm}^2$ at $375^{\circ}C$/60sec and $425^{\circ}C$/10sec, respectively. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained even at $450^{\circ}C$, therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Proceedings of the Korean Magnestics Society Conference
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• 2014.11a
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• pp.143-144
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• 2014

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.425-428
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• 2012

This paper presents the fabrication and characterization of graphene based hydrogen sensors. Graphene was synthesized by annealing process of Ni/3C-SiC thin films. Graphene was transferred onto oxidized Si substrates for fabrication of chemiresistive type hydrogen sensors. Au electrode on the graphene shows ohmic contact and the resistance is changed with hydrogen concentration. Nanoparticle catalysts of Pd and Pt were decorated. Response factor and response (recovery) time of hydrogen sensors based on the graphene are improved with catalysts. The response factors of pure graphene, Pt and Pd doped graphenes are 0.28, 0.6 and 1.26, respectively, at 50 ppm hydrogen concentration.