• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.201-206
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• 2002

Pd/Si/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved at $400^{\circ}C$/20sec. This was related to the formation of Pd-Si compounds by rapid thermal annealing and the in-diffusion of Si atoms to InGaAs surface. However, the specific contact resistivity increased slightly to low-$10^{-6}\Omega \textrm{cm}^2$ at $400^{\circ}C$ for longer than 30 seconds, and to high-$10^{-7}$ at 425~$450^{\circ}C$ for 10 seconds. This resulted from the formation of Pd-Ga compounds. Superior ohmic contact and non-spiking planar interface between ohmic materials and InGaAs were maintained after annealing at high temperature. Therefore, this thermally stable ohmic contact system is a promising candidate for compound semiconductor devices.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.482-485
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• 2008

Tetragonal-$Ni_{1-x}Pd_x$Si/Si (001) structure was studied by using density functional theory (DFT). An epitaxial interface between $2{\times}2{\times}4$ (001) tetragonal-NiSi supercell and $1{\times}1{\times}2$ (001) Si supercell was first constructed by adjusting the lattice parameters of B2-NiSi structure to match those of the Si structure. We chose Ni atoms as a terminating layer of the B2-NiSi; the equilibrium gap between the tetragonal-NiSi and Si was calculated to be 1.1 ${\AA}$. The Ni atoms in the structure moved away from the original positions along the z-direction in a systematic way during the energy minimization. Two different Ni sites were identified at the interface and the bulk, respectively. The two Ni sites at the interface have 6 and 7 coordination numbers. The Ni sites with coordination number 6 at the interface were located farther away from the interface, and were more favorable for Pd substitution.

• Journal of Sensor Science and Technology
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• v.21 no.4
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• pp.283-286
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• 2012

This paper presents the optical hydrogen sensor based on transparent 3C-SiC membrane and photovoltaic effect. Gasochromic materials of Pd and Pd/$WO_3$ were deposited by sputter on 3C-SiC membrane for gas sensing area. Gasochromic materials change to transparency by exposure to hydrogen. The variations of light intensity by hydrogen generate the photovoltaic of P-N junction between N-type 3C-SiC and P-type Si. Single layer of Pd shows higher photovoltaic compared with Pd/$WO_3$. However, phase transition from ${\alpha}$ to ${\beta}$ is shown at 6 %. Pd/$WO_3$ structure show the more linear response to hydrogen range of 2 % ~10 %. Also, almost 2 times fast response and recovery characteristics are shown at Pd/$WO_3$. These fast performances are come from the fact that Pd promoted the chemical reaction between hydrogen and $WO_3$.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.448-453
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• 1999

A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was explored. Hydrogen-sensing behaviors of Pd-SiC Schottky diode were analyzed as a function of hydrogen concentration and temperature by I-V and ${\Delta}I$-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.414-417
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• 2008

This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Journal of IKEEE
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• v.22 no.2
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• pp.356-361
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• 2018

We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

• Biomedical Science Letters
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• v.28 no.4
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• pp.247-259
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• 2022

Immunotherapy, which uses an immune mechanism in the body, has received considerable attention for cancer treatment. Suberoylanilide hydroxamic acid (SAHA), also known as a histone deacetylase inhibitor (HDACi), is used as a cancer treatment to induce active immunity by increasing the expression of T cell-induced chemokines. However, this SAHA treatment has the disadvantage of causing PD-L1 overexpression in tumor cells. In this study, we prevented PD-L1 overexpression by blocking the PD-1/PD-L1 pathway using PD-L1 siRNA. We designed two types of liposomes, the neutral lipid 1-palmitoyl-2-oleoyl-sn-glycero-3-phosphocholin (POPC) for SAHA, and 1,2-dioleoyl-3-trimethylammoniumpropane (DOTAP) for siRNA. To effectively target PD-L1 in cancer cells, we conjugated PD-L1 antibody with liposomes containing SAHA or PD-L1 siRNA. These immunoliposomes were also evaluated for cytotoxicity, gene silencing, and T-cell-induced chemokine expression in human non-small cell lung cancer A549 cells. It was confirmed that the combination of the two immunoliposomes increased the cancer cell suppression efficacy through Jurkat T cell induction more than twice compared to SAHA alone treatment. In conclusion, this combination of immunoliposomes containing a drug and nucleic acid has promising therapeutic potential for non-small-cell lung carcinoma (NSCLC).

• Korean Journal of Metals and Materials
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• v.46 no.12
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• pp.830-834
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• 2008

NiSi is currently being employed in 45 nm CMOS devices as a contact material. We employed a first principles calculation to understand the movements of atoms when Co, Pd, and Pt were added to tetragonal-NiSi on Si (001). The Ni atoms in the tetragonal-NiSi/Si (001) favored away from the original positions along positive c-direction in a systematic way during the energy minimization. Two different Ni sites were identified at the interface and the bulk, respectively. The Ni site at the interface farther away from the interface was more favorable for Pd and Pt substitution. Co, however, prafered the bulk site to the interface site, unlike Pd and Pt.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.399-402
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• 2019

The electromagnetic properties of heavy fermion $CePd_2Si_2$ are investigated using density functional theory using the local density approximation (LDA) and LDA+U methods. The Ce f-bands are located near the Fermi energy and hybridized with the Pd-3d states. This hybridization plays an important role in generating the physical characteristics of this compound. The magnetic moment of $CePd_2Si_2$ calculated within the LDA scheme does not match with the experimental result because of the strong correlation interaction between the f orbitals. The calculation shows that the specific heat coefficient underestimates the experimental value by a factor of 5.98. This discrepancy is attributed to the formation of quasiparticles. The exchange interaction between the local f electrons and the conduction d electrons is the reason for the formation of quasiparticles. The exchange interaction is significant in $CePd_2Si_2$, which makes the quasiparticle mass increase. This enhances the specific heat coefficient.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.67.2-67.2
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• 2017

본 연구에서는 $SiO_2$ 미세구조 상에 Pd 나노입자(NPs)를 증착하여, 불소화된 마이크로-나노 계층구조를 갖는 Pd-decorated $SiO_2$($Pd/SiO_2$)를 제작하였다. 마이크로 크기의 거칠기를 갖는 $SiO_2$ 층은 졸-겔 공정을 사용해서 제조된 용액을 전기분사함으로써 제조되었다. 이어서, 자외선(UV)을 이용한 광 환원법을 이용해 Pd 나노입자를 $SiO_2$ 층에 형성했다. 생성된 표면은 마이크로-나노의 계층구조 형태를 보여주었다. 해당 시편의 불소화 처리 후, 마이크로-나노의 계층구조 표면은 $170^{\circ}$ 이상의 물 접촉각(water contact angle; WCA) 및 $5^{\circ}$ 이하의 슬라이딩 각(sliding angle)을 보여줌으로써 물에 대해 탁월한 소수성을 나타내었다. 또한, 커피($CA=161^{\circ}$), 우유($CA=162^{\circ}$), 쥬스($CA=163^{\circ}$), 그리고 글리세롤($CA=165^{\circ}$)에 대해서도 우수한 소수 특성을 보여주었다. 또한, 이들 $Pd/SiO_2$ 층은 우수한 장기내구성 및 자외선 저항성을 보여주었다. 그리고 이어진 기름에 대한 접촉각 측정을 통해 해당 시편이 소유 특성이 아닌 친유 특성을 보여준다는 것을 확인할 수 있었고, 기름에 대한 CA는 약 ${\sim}10^{\circ}$로 매우 우수한 친유 특성을 나타내었다. 이와 같은 결과는 자체세정이 가능한 표면 및 지능형 물/기름 분리 시스템과 같은 스마트 장치에서 초소수성-친유성 특성을 갖는 계층구조의 $Pd/SiO_2$ 층을 사용할 가능성을 명확하게 보여준다고 판단된다.