• Journal of the Korean institute of surface engineering
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• v.24 no.4
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• Computers and Concrete
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• v.21 no.3
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• pp.311-319
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• 2018

This study used a volumetric method for design. The control group used waste Liquid Crystal Displayplay (LCD) glass powder to replace cement (0%, 10%, 20%, 30%), and the PZT group used Pd-Zr-Ti piezoelectric (PZT) powder to replace 5% of the fine aggregate to make cement mortar. The engineering and the mechanical and electricity properties were tested; flow, compressive strength, ultrasonic pulse velocity (UPV), water absorption and resistivity (SSD and OD electricity at 50 V and 100 V) were determined; and the correlations were determined by linear regression. The compressive strength of the control group (29.5-31.8 MPa) was higher than that of the PZT group (25.1-29 MPa) by 2.8-4.4 MPa at the curing age of 28 days. A 20% waste LCD glass powder replacement (31.8 MPa) can fill up finer pores and accelerate hydration. The control group had a higher 50 V-SSD resistivity ($1870-3244{\Omega}.cm$), and the PZT group had a lower resistivity ($1419-3013{\Omega}.cm$), meaning that the resistivity increases with the replacement of waste LCD glass powder. This is because the waste LCD glass powder contains 62% $SiO_2$, which is a low dielectric material that is an insulator. Therefore, the resistivity increases with the $SiO_2$ content.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.840-846
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• 1991

In case of the rapid thermal process by halogen lamps, an optical pyrometer is generally used to measure the temperature. It is, however, necessary to measure the temperature by the thermocouple when the process temperature is lower than 700$^{\circ}C$ and the correction of the temperature is required. Contact by the PdAg paste is commonly used out but in this case it is impossible to see the effect of surface states of the substrate, which is critical in the rapid thermal process. In this study, real temperature ramping speed of silicon substrates coveredwith various thin films such as SiO$_2$2, Si$_{3}N_{4}$, dopants, and conductive layers (Ti or Co) was investigated by a mechanical contact of the thermocouple. And the results were compared with the case in which the contact was made by the PdAg paste. Effect of process ambient was also studied. It was found that depending on the surface state, overshoot more than 100$^{\circ}C$ could occur. It was also found that in case of the substrate covered with conductive layers, mechanical contact might render the correct temperature.

• Journal of the Korean Chemical Society
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• v.23 no.3
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• pp.161-164
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• 1979

The effect of acidity and the metal surface area of the Pd loaded zeolite catalysts; prepared from $Ca^{2+}-,\;La^{3+}-,\;NH_4^+-$exchanged Y and dealuminated HY was studied for the reaction of n-butane. The amount of strong acid site determined by the temperature programmed desorption of ammonia increased in the order NaY < CaY < LaY. Total amount of acid site decreased with increasing degree of dealumination, but the portion of strong acid site increased with increasing $SiO_2/Al_2O_3$ ratio. The effective metal surface area determined by the CO adsorption technique was large for those zeolite catalysts having strong acidity. It was found that conversion of n-butane was strongly dependent on the acidity and the effective metal surface area of the catalysts. The fact that the conversion of n-butane was proportional to the effective metal surface area suggests that the dehydrogenation by metallic component is the primary step in the reaction of n-butane.

• KEPCO Journal on Electric Power and Energy
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• v.5 no.1
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• pp.39-43
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• 2019

Hydrogen energy has positive effects as an alternative energy source to overcome the energy shortage issues. On the other hand, since stability is very important in use, sensor technology that enables accurate and rapid detection of hydrogen gas is highly required. In this study, hydrogen sensor was developed on AlGaN/GaN heterostructure platform using Pd catalyst where a recess structure was employed to improve the sensitivity. Temperature and bias voltage dependencies on sensitivity were carefully investigated using a hydrogen concentration of 4% that is the safety threshold concentration. Due to the excellent properties of AlGaN/GaN heterostructure in conjunction with the recess structure, a very high sensitivity of 56% was achieved with a fast response speed of 0.75 sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.130-130
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• 2009

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The 1.2 ${\mu}m$ and 0.4 ${\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 ${\mu}m$ long cantilever resonators were -9.79, -7.72 and -8.0 $ppm/^{\circ}C$. On the other hand, TCF of 60, 80 and 100 ${\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 $ppm/^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.

• Korean Journal of Clinical Pharmacy
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• v.27 no.4
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• pp.258-266
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• 2017

Objective: To develop a population pharmacokinetics (PK)/pharmacodynamics (PD) model for alcohol in healthy volunteers and to elucidate individual characteristics to affects alcohol's PK or PD including dissolved oxygen. Methods: Following multiple intakes of total 540 mL alcohol (19.42 v/v%) to healthy volunteer, blood alcohol concentration was measured using a Breathe alcohol analyser (Lion SD-400 $Alcolmeter^{(R)}$). A sequential population PK/PD modeling was performed using NONMEM (ver 7.3). Results: Eighteen healthy volunteer were included in the study. PK model of alcohol was well explained by one-compartment model with first-order absorption and Michaelis-Menten elimination kinetics. $K_a$, V/F, $V_{max}$, $K_m$ is $8.1hr^{-1}$, 73.7 L, 9.65 g/hr, 0.041 g/L, respectively. Covariate analysis revealed that gender significantly influenced $V_{max}$ (Male vs Female, 9.65 g/hr vs 7.38 g/hr). PD model of temporary systolic blood pressure decreasing effect of alcohol was explained by biophase model with inhibitory $E_{max}$ model. $K_{e0}$, $I_{max}$, $E_0$, $IC_{50}$ were $0.23hr^{-1}$, 44.9 mmHg, 138 mmHg, 0.693 g/L, respectively. Conclusion: Model evaluation results suggested that this PK/PD model was robust and has good precision.

• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.121-129
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• 2017

Pd based catalysts were prepared by impregnating palladium precursor using incipient wetness method on $TiO_2$, $Al_2O_3$, $ZrO_2$, and $SiO_2$ and were applied for the selective oxidation of $H_2$ in the presence of CO. Their physicochemical properties were studied by X-ray diffraction (XRD), $N_2$-sorption, temperature programmed desorption of CO (CO-TPD) and (CO+$H_2O$)-TPD, temperature programmed reduction of CO (CO-TPR) and XPS a. The results of CO- and (CO+$H_2O$)-TPD showed the correlation between peak temperature of TPD and catalytic activities for $H_2$ and CO conversion. The $Pd/ZrO_2$ catalyst exhibited the highest conversion of $H_2$. The addition of $H_2O$ vapor promotes the conversion of $H_2$ and CO by inducing easy desorption of CO and $H_2$ in the competitive adsorption of $H_2O$, CO and $H_2$.

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.433-438
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• 2006

In order to examine the working condition of melts in tin bath of float process it was investigated Sn diffusion behavior and solidification rate of melts for alkali-alkaline earth-silica PDP substrate glasses such as commercial CaO rich CS-77 glass, commercial $Al_2O_3$ rich PD-200 glass and self developed $SiO_2$ rich T-series (T-2, T-4, T-6) glasses. In the case of Sn depth and concentration created in glass surface by ion exchange between Sn and alkali, T-series showed lower value than CS-77, especially T-2 is more excellent than PD-200. The solidification rate of melts expressed by cooling time between $log{\eta}=4\;and\;7.6dPa{\cdot}s$ was low for T-series comparing with CS-77 and PD-200. Therefore, it was concluded that T-series is desirable considering forming condition in the tin bath of the float process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.