• Physical Therapy Korea
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• v.14 no.1
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• pp.28-36
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• 2007

The aim of this study was to identify the effect of suspension unloading (SU) and electrical stimulation upon the development of neonatal muscular system. For this study, the neonatal rats were randomly divided into three groups: a control group, an experimental group I, and an experimental group II. The SU for experimental group I and II was applied from postnatal day (PD) 5 to PD 30. The electrical stimulation for soleus muscle of experimental group IIwas applied from PD 16 to PD 30 using neuromuscular electrical stimulation (NMES), which gave isometric contraction with 10 pps for 30 minutes twice a day. In order to observe the effect of SU and ES, this study observed myocyte enhancer factor 2C (MEF2C) and vascular endothelial growth factor (VEGF) immunoreactivity in the soleus muscles at PD 15 and PD 30. In addition, the motor behavior test was performed through footprint analysis at PD 30. The following is the result. At PD 15, the soleus muscles of experimental group Iand II had significantly lower MEF2C, VEGF immunoreactivity than the control group. It proved that microgravity conditions restricted the development of the skeletal muscle cells at PD 15. At PD 30, soleus muscles of the control group and experimental group II had significantly higher MEF2C, VEGF, immunoreactivity than experimental group I. It proved that the NMES facilitated the development of the skeletal muscle cells. At PD 30, it showed that SU caused the decrease in stride length of parameter of gait analysis and an increase in toe-out angle, and that the NMES decreased these variations. These results suggest that weight bearing during neonatal developmental period is essential for muscular development. They also reveal that NMES can encourage the development of muscular systems by fully supplementing the effect of weight bearing, which is an essential factor in the neonatal developmental process.

• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.448-453
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• 1999

A Pd-SiC Schottky diode for detection of hydrogen gas operating at high temperature was explored. Hydrogen-sensing behaviors of Pd-SiC Schottky diode were analyzed as a function of hydrogen concentration and temperature by I-V and ${\Delta}I$-t methods under steady-state and transient conditions. The effect of hydrogen adsorption on the barrier height was investigated. Analysis of the steady-state kinetics using I-V method confirmed that the atomistic hydrogen adsorption process is responsible for the barrier height change in the diode.

• Bulletin of the Korean Chemical Society
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• v.29 no.12
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• pp.2434-2440
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• 2008

The effect of sodium (Na) promotion was studied in the biphenol (BP) hydrogenation using various Pd/C catalysts. Different amounts of sodium metal were used for promotion with Pd/C and their effects on BP hydrogenation were observed. The promotion order was changed to compare the effect of the position of the promoter in relation to the palladium (Pd) metal on the catalytic activity and yield of the final product, bicyclohexyl-4,4'-diol (BHD). Pd/C catalysts prepared from different methods were also sodium-promoted and the changes of the reaction pathway according to the type of promoted Pd/C catalyst were compared.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.818-821
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• 2002

We investigated the evolution of magnetic property with varying palladium (Pd) contents and elevating substrate temperatures up to 200 $^{\circ}C$ during dc-sputtering. We observed that saturation magnetization (Ms), remanence and anisotropic magnetoresistance (AMR) ratio decrease with Pd contents in the case of keeping the substrate temperature at 3$0^{\circ}C$. However they increase by adding 2 %Pd, then decrease above 3 %Pd when we keep the substrate temperature at 20$0^{\circ}C$. Coercivity does not change with Pd contents. Our results imply that we may tune the Ms and AMR with Pd contents and substrate temperature in permalloy films.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.43-49
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• 2002

Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of $1.1\times10^{-6}\Omega\textrm{cm}^2$ was achieved after annealing at $400^{\circ}C$/10sec, and a ohmic performance was degraded at higher annealing temperature due to the chemical reaction between the ohmic contact materials and the InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact($high-10^{-6};{\Omega}\textrm{cm}^2$) were maintained. This ohmic contact system is expected to be a promising candidate for compound semiconductor devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.128-128
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• 2012

We investigated the atomic and electronic properties of graphene grown by Pd silicidation and intercalation using LEED, STM, and ARPES. Pd was deposited on the 6H-SiC(0001) surface at RT. The formation of Pd silicide gives rise to breaking of Si-C bonds of the SiC crystal, which enables to release C atoms at low temperature. The C atoms are transformed into graphene from $860^{\circ}C$ according to the LEED patterns as a function of annealing temperature. Even though the graphene spots were observed in the LEED pattern and the Fourier transformed STM images after annealing at $870^{\circ}C$, the topography images showed various superstructures so that graphene is covered with Pd silicide residue. After annealing at $950^{\circ}C$, monolayer graphene was revealed at the surface. The growth of graphene is not limited by surface obstacles such as steps and defects. In addition, we observed that six protrusions consisting of the honeycomb network of graphene has same intensity meaning non-broken AB-symmetry of graphene. The ARPES results in the vicinity of K point showed the non-doped linear ${\pi}$ band structure indicating monolayer graphene decoupled from the SiC substrate electronically. Note that the charge neutrality of graphene grown by Pd silicidation and intercalation was sustained regardless of annealing temperature in contrast with quasi-free- standing graphene induced by H and Au intercalation. Further annealing above $1,000^{\circ}C$ accelerates sublimation of the Pd silicide layer underneath graphene. This results in appearance of the $(6r3x6r3)R30^{\circ}$ structure and dissolution of the ${\pi}$ bands for quasi-free-standing graphene.

• Transactions of the Korean hydrogen and new energy society
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• v.26 no.3
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• pp.227-233
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• 2015

In this study, we evaluate catalytic activity of Pd/C catalyst that is synthesized by modified polyol method. With such formed Pd/C is used as anodic catalyst for direct formic acid fuel cell (DFAFC) and performances of the DFAFC are measured to verify whether the new catalyst is effective for enhancing DFAFC performance and to determine optimal loadings of the Pd/C needed for obtaining best DFAFC performance. Pd particle distribution of the Pd/C catalyst is analyzed by TEM, while its catalytic activity is estimated by using cyclic voltammogram (CV) as measuring formic acid oxidation reaction and active surface area. As a result of that, the Pd/C catalyst synthesized by modified polyol shows better catalytic activity and DFAFC performance with small loading amount of Pd/C. When loading amount of Pd/C is $1.5mgcm^{-2}$, maximum power density of DFAFC adopting the catalyst is $122mWcm^{-2}$.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.137-140
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• 2001

Compound PdCl₂(Phc≡N)₂(1) reacted with 2,6-diisopropylaniline to give trans-[Pd(NH₂-C/sub 6/-H₃-2, 6-i-Pr₂)₂Cl₂] (2). Compound 2 was characterized by spectroscopy (¹H-NMR, /sup 13/C-NMR, and IR) and X-ray diffraction. Crystallographic data for 2: monoclinic space group P2₁/n, a=13.532(3) Å, b=5.749(1) Å, c=17.880(4)Å, β=103.84(2)°, Z=2, R(wR₂)=0.0466(0.1226).

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3745-3748
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• 2010

Pd(II) p-tolylamide Pd(2,6-$(Ph_2PCH_2)_2C_6H_3$)(NH($C_6H_4Me$-p)) (1) was metathetically prepared by the reaction of Pd(2,6-$(Ph_2PCH_2)_2C_6H_3$)Cl with NaNH($C_6H_4Me$-p). Treatment of 1 with carbon dioxide affords the palladium(II) carbamate Pd(2,6-$(Ph_2PCH_2)_2C_6H_3$)(OC(O)NH($C_6H_4Me$-p)) (2), quantitatively. Complex 2 reacts with HX (X = Cl, OTf) to give Pd(2,6-$(Ph_2PCH_2)_2C_6H_3$)X, $NH_2$(p-Tol) and $CO_2$. Reaction of the palladium(II) carbamate with MeI produced Pd(2,6-$(Ph_2PCH_2)_2C_6H_3$)I along with generation of methyl N-tolylcarbamate MeOC(O)NH($C_6H_4Me$-p), exclusively.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.56-63
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• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.