• Journal of Sensor Science and Technology
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• v.8 no.6
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• pp.476-480
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• 1999

PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and $400^{\circ}C$. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of $200^{\circ}C$ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at $200^{\circ}C$. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.

• Journal of the Korean Ceramic Society
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• v.44 no.2 s.297
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• pp.89-92
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• 2007

PbSe, with a band gap in the mid-infrared and a samll effective mass, is an interesting material for optical and electrical applications in infrared region. Various colloidal synthetic routes for synthesizing PbSe quantum dot nanoparticles have been developed in the last couple of years. In this work, stable colloidal solutions containing crystalline PbSe particles in the order of 5-15 nm were synthesized using different amount of acetic acid in high boiling coordinating solvents. The size and shape of PbSe nanoparticles was greatly influenced by coexistence of acetic acid in synthetic medium. It was observed by TEM that the shape of PbSe nanoparticles with different amount of acetic acid was changed from spherical to cube or star types.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.1
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• pp.35-41
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• 2004

This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

• Journal of the East Asian Society of Dietary Life
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• v.11 no.4
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• pp.259-267
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• 2001

This study was to investigate the effect of selenium on hepatic antioxidative defense system and oxidative damage in lead-administered rats. Male Sprague-Dawley rats weighing 140$\pm$5g were divided into one normal group(Se, 0 ppm) and three lead groups according to dietary levels of selenium supplementation: Pb0(Se, 0 ppm), PbS(Se, 0.5 ppm), and PbSS(Se, 1.0 ppm). All experimental groups were fed the experimental diet ad libitum for 4 weeks, and lead groups fed one containing 2,000 ppm lead acetate. Liver superoxide dismutase(SOD) activities in Pb0 group increased compared with other experimental groups. Liver gluthathione peroxidase(GSH-px) activities in Pb0 group decreased compared with normal group, but those of PbS and PbSS groups significantly increased compared with Pb0 group. Glutathione S-transferase(GST) activities decreased in Pb0 group and not significantly different from PbS and PbSS groups compared with normal group. Reduced glutathione(GSH) contents and GSH/GSSG of liver in Pb0 group were lower than those of other groups. Liver vitamin E contents in Pb0 group were about 50% of the normal group, but those of PbSS and PbS increased more than Pb0 group. Liver damage in electron microphotography process decreased in RER, showed an increase in Iysosome and also an increase in swelling of mitochondria. and ordered as follows : PbSS. PbS. and Pb0. It was concluded that high levels of dietary selenium had protective effects on peroxidative damage of hepatic cell accompanied with increased antioxidative defense system in lead-administered rats.

• Analytical Science and Technology
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• v.12 no.2
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• pp.130-135
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• 1999

A graphite furnace atomic absorption spectrometry (GFAAS) with matrix modification has been used to determine trace amounts of arsenic, lead and selenium in rice flour samples. A mixed solution of palladium and magnesium nitrate was used as a matrix modifier to convert the analyte elements into a phase of higher thermostability and to increase the volatility of concomitants in graphite furnace. Matrix modification effects by the mixed solution were investigated for several elements (As, Cd, Cu, Pb, Se, Zn). It has been found that the matrix modifier substantially increase the pyrolysis and atomization temperature, and absorbance for As, Pb and Se. The concentration of As, Pb and Se in rice flour samples were determined by standard addition method with Zeeman background correction after microwave acid digestion. In this method the characteristic concentrations of As, Pb and Se are 26 ng/g, 18 ng/g, 24 ng/g on the basis of dry sample respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.305-305
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• 2014

포토리소그래피와 도금 공정을 통해 PbSe 나노와이어를 합성하였다. PbSe은 광센서 및 열전 물질로 많이 알려져있다. 이러한 응용처에의 향상된 성능을 위해 본 연구에서는 PbSe 나노와이를 합성하였다. 합성에 사용된 방법인 포토리소그래피와 도금 공정은 반도체 산업 전반에 인프라가 잘 구축된 공정이며, 병렬 공정이다. 따라서 본 연구는 경제적이며 대량생산이 가능한 PbSe 나노와이어의 합성법을 제안한다.

• Bulletin of the Korean Chemical Society
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• v.26 no.11
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• pp.1803-1806
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• 2005

Formation of octahedral shaped PbSe quantum dots at higher synthesis temperature is being reported in this paper. The synthesis includes the reaction between lead oleate and trioctylphosphine selenide under inert gas conditions to produce PbSe. TEM, SEM, XRD and EDS were used to characterize the samples. The SEM exhibited the formation of spherical shaped nanocrystals at temperature below 140 ${^{\circ}C}$ and octahedral shaped nanoparticles at higher temperatures. Moreover, the TEM also showed the well resolved (111) lattice fringes proving that the nanocrystals were crystalline in nature. Synthesis of highly pure PbSe nanocrystals was another interesting aspect of this research.

• Korean Journal of Materials Research
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• v.33 no.5
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• pp.189-194
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• 2023

This study uses first-principles calculations to investigate the mechanical properties and effect of strain on the electronic properties of the 2D material 1H-PbX₂ (X: S, Se). Firstly, the stability of the 1H Pb-dichalcogenide structures was evaluated using Born's criteria. The obtained results show that the 1H-PbS₂ material possesses the greatest ideal strength of 3.48 N/m, with 3.68 N/m for 1H-PbSe₂ in biaxial strain. In addition, 1H-PbS₂ and 1H-PbSe₂ are direct semiconductors at equilibrium with band gaps of 2.30 eV and 1.90 eV, respectively. The band gap was investigated and remained almost unchanged under the strain ε_xx but altered significantly at strains ε_yy and ε_bia. At the fracture strain in the biaxial direction (19 %), the band gap of 1H-PbS₂ decreases about 60 %, and that of 1H-PbSe₂ decreases about 50 %. 1H-PbS₂ and 1H-PbSe₂ can convert from direct to indirect semiconductor under the strain ε_yy. Our findings reveal that the two structures have significant potential for application in nanoelectronic devices.

• Bulletin of the Korean Chemical Society
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• v.29 no.9
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• pp.1729-1731
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• 2008

Colloidal solutions of crystalline PbSe nanoparticles have been synthesized by hot solution chemical process using PbO in oleic acid and tributylphosphine (TBP) bonded selenium. The use of TBP as a capping agent along with oleic acid gives a very good yield (around 10% at 180 ${^{\circ}C}$) with an average diameter of particle of about < 6.6 nm. The effects of temperature on size and production yield of PbSe quantum dots are studied. Xray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and UV/VIS/NIR absorption spectroscopy were used to characterize the samples.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.251-252
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• 2008

We fabricated silica glass optical fiber containing PbSe quantum-dots (QD) of average size 3.2 nm. The response time of the PbSe-QD doped optical fiber was measured to be around 200 ps. However, after exposure to 1064 nm laser emission for 15 minutes, the response time dramatically reduced to around 2.5 ps, which may be due to photo-darkening effect.