• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• Environmental Engineering Research
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• v.10 no.3
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• pp.112-121
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• 2005

The effectiveness of quicklime-based stabilization/solidification (S/S) in immobilizing lead (Pb) was assessed by performing semi-dynamic leaching tests (ANS16.1). In order to simulate landfill leaching conditions, the ANS 16.1 test was modified by using 0.014 N acetic acid (pH = 3.25) instead of distilled water. Artificial soil samples as well as field soil samples contaminated with Pb were tested. The effectiveness of quicklime treatment was evaluated by determining diffusion coefficients ($D_e$) and leachability indices (LX). A model developed by de Groot and van der Sloat was used to elucidate the controlling Pb leaching mechanisms. Overall, upon quicklime treatment Pb leachability was significantly reduced in a]l of the samples tested. The mean LX values were higher than 9 for an artificial soil sample containing 30% kaolinite treated with 10% quicklime and for a field soil sample treated with 10% quicklime, which suggests that S/S treated soils can be considered acceptable for "controlled utilization". Moreover, quicklime treatment was more effective in artificially contaminated soil with high kaolinite content (30%), indicating the amount of clay plays an important role in the success of the treatment. The controlling Pb leaching mechanism was found to be diffusion, in all quicklime treated samples.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.7-15
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• 2006

In-situ observation of electromigration in thin film pattern of 63Sn-37Pb solder was performed using a scanning electron microscope system. The 63Sn-37Pb solder had the incubation stage of electromigration for edge movement when the current density of $6.0{\times}10^{4}A/cm^2$ was applied the temperature between $90^{\circ}C\;and\;110^{\circ}C$. The major diffusion elements due to electromigration were Pb and Sn at temperatures of $90-110^{\circ}C\;and\;25-50^{\circ}C$, respectively, while no major diffusion of any element due to electromigration was detected when the test temperature was $70^{\circ}C$. The reason was that both the elements of Sn and Pb were migrated simultaneously under such a stress condition. The existence of the incubation stage was observed due to Pb migration before Sn migration at $90-110^{\circ}C$. Electromigration behavior of 63Sn-37Pb solder had an incubation time in common for edge drift and void nucleation, which seemed to be related the lifetime of flip chip solder bump. Diffusivity with $Z^*$(effective charges number) of Pb and Sn were strongly affect the electromigration-induced major diffusion element in SnPb solder by temperature, respectively.

• Journal of Electrochemical Science and Technology
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• v.2 no.2
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• pp.76-84
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• 2011

Potentiostatic oxidation of Pb-1.7%Sb alloy used in the manufacture of grids of lead-acid batteries over the potential range from -1.0V to 2.3V in 5M $H_2SO_4$ in the absence and the presence of 0.4M $H_3PO_4$ and the self-discharge characteristics of the oxide layer formed is studied by electrochemical impedance spectroscopy (EIS). Depending on the potential value, sharp variations in resistance and capacitance of the alloy are recorded during the oxidation and they can be used for identification of the various substances involved in passive layer. Addition of $H_3PO_4$ is found to deteriorate the insulating properties of the passive layer by the retardation of the formation of $PbSO_4$. $H_3PO_4$ completely inhibits the current and impedance fluctuations recorded in $H_3PO_4$-free solutions in the potential range 0.5 V-1.7 V. These fluctuations are attributed to the occurrence of competitive redox processes that involve the formation of $PbSO_4$, $PbOSO_4$, PbO and $PbO_2$ and the repeated formation and breakdown of the passive layer. Self-discharge experiments indicate that the amount of $PbO_2$ formed in the presence of $H_3PO_4$ is lesser than in the $H_3PO_4$-free solutions. The start of transformation of $PbSO_4$ into $PbO_2$ is greatly shortened. $H_3PO_4$ facilitates the diffusion process of soluble species through the passive layer ($PbSO_4$ and basic $PbSO_4$) but impedes the diffusion process through $PbO_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.307-314
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• 1998

PZT thin films were fabricated by the Sol-gel method. Starting materials used for the preparation of the stock solution were Pb-acetate trihydrate, Zr-normal propoxide and Ti-isopropoxide. 2-Methoxyethanol and iso-propanol were used for solution. For studying the diffusion of Pb ion into the substrates. We used bare Si substrate, $SiO_2/Si$ substrates which was produced by thermal oxidation and $TiO_2/SiO_2/Si$ which was mad by Sol-gel method. Densification and adhesion of thin films were observed by SEM. Phase formation of thin films and diffusion of Pb ion into the substrate were examined by XRD and ESCA, respectively. In the case of bare Si and $SiO_2/Si$ substrate, we obtained the perovskite phase at $700^{\circ}C$ and restricted a little the diffusion of Si ion into the film with $SiO_2$ buffer layer. In the case of $TiO_2/SiO_2/Si$, perovskite phase were obtained at $500^{\circ}C$ and the diffusion of Pb ion and Si ion were restriced.

• Journal of Welding and Joining
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• v.19 no.3
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• pp.311-316
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• 2001

This paper presents that the affecting factors to the solderability and initial reliability. It is the factor that the coefficient of thermal expansion between package and PCB(Printed Circuit Board), the quantity of solder paste and reflow condition, and Au thickness of the solder ball pad on polyimide tape. As the reflow soldering condition for 48 ${\mu}BGA$ is changed, it is estimated that the quantity of Au diffusion at eutectic Sn-Pb solder surface and initial bonding strength of eutectic Sn-Pb solder and lead free solder. It is the result that quantitative measurement of Au diffusion quantity is difficult, but the shear strength of eutectic Sn-Pb solder joint is 842 mN at first reflow and increases 879 mN at third reflow. The major failure mode in solder is judged solder fracture. So, Au diffusion quantity is more affected by reflow temperature than by the reflow times.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.795-801
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• 1994

The BiPbSrCaCuO superconductor was fabricated by diffusion of The dual layer composed of SrS12TCaS11TCuS12TOS1xT in upper layer and BiS12TPbSI0.3TCuS12TOS1yT in lower layer, and varified growh-mechanism of BiPbSrCaCuO superconducting phase. And, we produced optimum conditions of spread volume and each stage of sintering time were upper layer:Lower layer=1:0.2, 1:0.4, 1:0.6 and 24hr., 120hr., 210hr. From the result, the optimum conditions are spread volume(Upper layer:Lower layer=1:0.6), sintering time(210hrs.) at 820$^{\circ}C$.The BiPbSrCaCuO superconductor, fabricated optimum condition, showed zero resistance at critical temperature of 70k.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.102-109
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• 2000

When PbZrO3 (PZ) and PbTiO3 (PT) particles were scattered on polished surfaces of sintered Pb(Zr0.52Ti0.48)O3 (PZT; Zr/Ti=1.08) and then annealed, the PZT grain boundaries migrated. Near the scattered particles, grain boundaries were corrugated and thus the grain shape changed from a normal one to irregular ones. Especially, near the scattered PZ particles, fast grain growth occurred. In the regions swept by moving grain boundaries, the Zr/Tiratio was measured to be about 1.35 for of PZ scattering and about 0.8 for PT scattering, respectively. This result indicates that the grain boundary migration was induced by alloying of Zr and Ti ions in PZT grains, as in usual diffusion induced grain boundary migration(DIGM). A calculation showed that higher coherency strain energy was induced for PT scattering because of higher alloying of Ti than of Zr.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.546-547
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• 2002

Ni thin film on the PMN-PT crystal wafer were deposited by using E-beam evaporator technique. Deposited film was patterned by UV-lithography and etching and was in-diffused at 300~600C. Diffusion profile of Ni ions in PMN-PT was measured by secondary ion mass spectroscopy (SIMS).

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.