• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.1-4
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• 2015

(111)-oriented and random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) perovskite relaxor ferroelectric thin films were fabricated on Pt(111)/$TiO_x$/$SiO_2$/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phase coexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (${\eta}=75%$, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile, giant electrocaloric effect (ECE) (${\Delta}T=45.3K$ and ${\Delta}S=46.9JK^{-1}kg^{-1}$ at $598kVcm^{-1}$) at room temperature (290 K), rather than at its Curie temperature (408 K), was observed in random oriented $Pb_{0.8}Ba_{0.2}ZrO_3$ (PBZ) thin film, which makes it a promising material for the application to cooling systems near room temperature. The giant ECE as well as high dielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FE phase transition.

• The Journal of the Petrological Society of Korea
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• v.27 no.1
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• pp.37-47
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• 2018

Volcanic ash samples of historical eruptions from Mt. Baekdu were analyzed for major oxides, trace and rare earth elements by a variety of analytical techniques. The results indicate that the ashes consist of approximately 58.8~71.1 wt.% $SiO_2$, 9.6~16.8 wt.% $Al_2O_3$, 4.5~6.9 wt.% $Fe_2O_{3t}$, 0.1~1.7 wt.% MgO, 0.3~1.6 wt.% CaO, 5.2~6.3 wt.% $Na_2O$, 4.3~5.9 wt.% $K_2O$ and less than 1.2 wt.% $TiO_2$. Thirty two trace metals including Ba, Cu, Cr. Co, Ni, Sr, V, Zn, and Zr were analyzed. The ashes can be divided two groups: group A(1 ka Millennium pumice, 1668 and $190{\underline{3}}$ pumice) and group B(1702 pumice) according to the relative enrichment of HREEs. The abundances of heavy metals such as Cu, Co, Mn, and Zn were relatively low. As compared to the Sakurajima volcanic ash, Baekdusan volcanic ash has low concentrations of Y, Nb, Pb, U, Sc, V, Ni and Cu and high concentrations of Zr, Ba, Hf, Cr, Co, Zn and rare-earth (except Eu).

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.334-337
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• 2017

In this paper, to develop the ceramics with high $d_{33}$ and high $Q_m$ for ultrasonic transducer applications, $0.10Pb(Ni_{1/3}Nb_{2/3})O_3-0.07Pb(Mn_{1/3}Nb_{2/3})O_3-0.83Pb(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ (PNN-PMN-PZT) ceramics were sintered at $940^{\circ}C$ using $CuO-Li_2CO_3-Bi_2O_3$ (CLBO) as a sintering aid by a traditional solid-state technique. The influence of zinc oxide additive on the physical properties of the prepared ceramics were systematically investigated. The R-T (rhombohedral-tetragonal) phase coexistence was found in the ceramics without zinc oxide additive and with increasing amounts of ZnO additive, the specimens showed a tetragonal phase. The formation of a liquid phase between ZnO and $Bi_2O_3$ contributed significantly to the grain growth of specimens. For the 0.1 wt% ZnO ceramics, the optimal physical properties of $d_{33}=370pC/N$, ${\varepsilon}_r=1,344$, $k_p=0.621$, and $Q_m=1,523$ were obtained.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.769-775
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• 2001

High quality PZT piezoelectric thin films were sputter- deposited on$ RuO_2$/$SiO_2$/Si substrates by using 2-step deposition method. As the first step, PZT seed layers were fabricated at a low temperature($475^{\circ}C$ ) to form a pure perovskite phase by reducing the volatility of Pb oxide. and then, as the second step, the PZT films were deposited at high temperatures ($530^{\circ}C$~$570^{\circ}C$) to reduce the defect density in the films. By this method, the pure perovskite phase was obtained at high deposition temperature range ($530^{\circ}C$~$570^{\circ}C$) and the superior electrical properties of PZT films were obtained on $RuO_2$substrate : 2Pr : 60$\mu$C/$\textrm{cm}^2$, $E_c: 60kV/cm, \;J_t: 10^{-6}A/cm^2\; at\; 250kV/cm$. The residual stress of PZT films fabricated by the 2-step deposition method was tensile and below 150MPa. It was attempted to control the residual stress in the PZT films by applying a negative bias to the substrate. As the amplitude of the substrate bias was increased, the residual tensile stress was slightly decreased, however, the ferroelectric properties of PZT films were degraded by ion bombardment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.455-459
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• 2001

In this paper, the dielectric and pizoelectric properties of 0.05Pb(M $n_{04}$ $W_{0.2}$N $b_{0.4}$) $O_3$-0.95(PbZ $r_{x}$ $Ti_{1-x}$ ) $O_3$+yN $b_2$ $O_{5}$ , are investigated as a function of the mole ratio of Zr and the amount of N $b_2$ $O_{5}$ . Also, the phase is analyzed by XRD. When the mole ratio of Zr is 0.51, the electromechanical coupling coefficient( $k_{p}$ ), relative dielectric constant ($\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ ), piezoelectric stain constrain ( $d_{33}$ and dielectric loss tangent show maximum, while the mechanical quality factor shows minimum value ; $k_{p}$ =56.5%, $d_{33}$ =258pC/N, $\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ =1170, $Q_{m}$ =1150, tan$\delta$=0.51%. At that composition, MPB which rhombohedral and tetragonal phase coexist in this ternary system is shown by the results of XRD analysis. Also, when the amount of N $b_2$ $O_{5}$ is 0.3wt%, the mechanical quality factor is increased to about 2000. The phase transition temperature of the ternary piezoelectric ceramic system showed about 35$0^{\circ}C$.TEX>.>.>.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.349-356
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• 1996

완화형 강유전체의 가장 대표적인 PMN계에서 첨가제의 종류와 함량, 측정온도, 인가 전계의형태 등의 변화에 따른 전계인가 변화특성을 광법위하게 조사하였다. Columbite precursor법에의해 분말을 준비하고 고상소결방법에 의하여 모든 시편을 제조하였다. 순수한 PMN에 첨가제로서 PbTiO3와 Pb(Zr, Ti)O3를 첨가한 경우에 완전한 perovskite 구조의 고용체가 형성되었음을 알 수 있었다. T$\varepsilon$max이상에서는 변위의 이력이 크게 발생하는 강유전체의 거동을 보여주었다. 양방향으로 전계를 인가하여 변위를 이용하면 발생 strain은 실온 근방에서 온도에 대하여 안정적이지만 단방향 전계에 따른 변위는 온도에 따라 크기가 변한다는 것을 알 수 있었고 유전상수가 큰 경우가 전왜의 크기 또한 큰 것을 알 수 있었다. 0.9MN-0.1PT와 0.8PMN-0.2PZT의 경우 최대가 되는 온도는 유전율이 최대가 되는 온도보다 더 낮은 온도에서 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.847-851
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• 2000

In this study, contour-vibration-mode Pb($Ni_{1/2}$,$W_{1/2}$)$O_3$-Pb(Zr,Ti)$O_3$ piezoelectric transformers for driving a 28W(T5) fluorescent lamp were fabricated to the modified filter structure with ring and dot electrodes which has been developed for application in 455kHz AM radios. The piezoelectric transformers were fabricated to the size of $31.5$\times$31.5$\times$2.5$mm^3$ with the variations of ring/dot electrode area ratio. Driving of piezoelectric transformer was carried out with input region for the ring electrode and output region for the dot electrode. The electrical properties and characteristic temperature rises caused by the vibration were measured at various load resistances. A 28 W fluorescent lamp, T5, was successfully driven by the fabricated transformer. The transformer with ring/dot electrode area ratio of 1.83 exhibited the best properties in terms of output power, efficiency and characteristic temperature rise, 30.95 W, 97.57% and8.3$^{\circ}C$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.68-69
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• 2005

Low temperature ($\leq900^{\circ}C$) sintering piezoelectric ceramics $0.01Pb(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3+0.1wt%Y_2O_3+xwt%ZnO$ $(0{\leq}x{\leq}2.5)$ have been developed and investigated. The electromechanical coupling coefficient ($k_p$), piezoelectric constant ($d_{33}$), and mechanical quality factor ($Q_m$) have been measured to characterize the piezoelectric materials system. When 2.0 wt% ZnO is added, the properties of the system, $d_{33}$ = 559 pC/N, $k_p$ = 55.0 % and $Q_m$ = 73.4 are obtained which are very suitable for piezoelectric actuators. A bending mode multilayer actuator has been also developed using the materials which size is $27(L)\times9(W)\times1.07(t)mm^3$. The actuators are fabricated by multilayer ceramic (MLC) process and consist of24 layers and each layer thickness is $35{\mu}m$. At this time, the displacement of actuator was $100{\mu}m$ at 28V.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.156-156
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• 2000

The piezoelectric properties and the doping effect for $0.95Pb(Zr_xTi_{l-x})O_3+0.O5Pb(Mn_{1/3}Nb_{2/3})O_3$compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the value of $k_p$ and ${\varepsilon}_{33}^T$ were maximized, but $Q_m$ was minimized $(k_p=0.57, Q_m=1550)$ in the composition of x=0.51. In order to increase the values of $Q_m$, $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of $k_p$ decreased, and the values of $Q_m$ increased with doping concentration of $Nb_2O_5$ . As a experiment results under high electric field driving, when vibration velocity was ower than 0.6[m/s], the temperature increase was 20[℃], and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.131-134
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• 2001

In this paper, the piezoelectric and dielectric properties as a function of x and a in $aPbZr_xTi_{1-x}O_3-(1-a)Pb(Mn_{1/3}Nb_{2/3})O_3$ + ywt%MgO is investigated. As a results, when a is 0.95 and x is 0.505, electromechanical coupling factor$(k_p)$, permittivity${\varepsilon}_33^T/{\varepsilon}_0$, piezoelectric strain constant$(d_{33})$ and mechanical quality factor$(Q_m)$ are 58 %, 1520, 272 pC/N and 1550, respectively. From XRD analysis, when x is 0.505, it is MPB which present rhombohedral and tetragonal phase in same quantity. Also, From SEM observation, when sintering temperature is $1150^{\circ}C$, grain size is about $2\;{\mu}m$. As a results added MgO dopant in the ternary piezoelectric ceramic, when MgO content is 0.1 wt%, $k_p$ increases to 63[%].