• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.294-296
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• 1999

Solid solution ceramics having various ratios between xPb( $Y_{1}$2/T $a_{1}$2/) $O_3$ and Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$were synthesized by a conventional solid state reaction for well sintered specimens, dielectric and piezoelectric prperties were studied as a function of composition. The dielectric constant of PYT-PZT ceramics of 4 mol% PYT was 1,424 at room temperature. The maximum value of electromechanical couping facotr $k_{p}$ of 51% $k_{t}$ of 30% were obtained at the composition of 4 mol% PYT, howerver mechanical quality factor( $Q_{m}$) had a minimum value of 69 at 4 mol% PYT. Also the maximum value of piezoelectric constant of $D_{33}$(310[pC/N]) and $d_{31}$(-131[pC/N]) were obtained at the composition of 4 mol% PYT content.ntent.t.t.t.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.60-63
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• 1997

Dieletric ailed piezoelectric properties of Pb[$Zr_{0.45}$/ $Ti_{0.5-x}$/L $u_{x}$ (M $n_{1}$3//S $b_{2}$3)$_{0.05}$] $O_3$(0$\leq$x $\leq$0.03) were investigated. The partial substitution of $Ti^{4+}$ by a L $u^{3+}$ permitted improvement of the piezoelectric constant( $d_{33}$ ), electromechanical coupling factor ( $k_{p}$ ) and dielectric constant($\varepsilon$$_{33}$ /Sup T/). The dielectric loss(tan $\delta$ ) increased and mechanical quality factor(Qm) decreased with an increase of x were observed. A new piezoelectric material for actuator application was developed at x=0.02 with $d_{33}$ =370$\times$10$^{-2}$ /C/N, $k_{p}$ =58.5%, $\varepsilon$$_{33}$ $^{T}$ =1321, $Q_{m}$ =714 and tan $\delta$ =0.98%.%..%.%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.310-310
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• 2008

본 연구에서는 (1-x) Pb(Zr0.515Ti0.485)$O_3$ - x Pb$(Sb_{1/2}Nb_{1/2})O_3$ + 0.5wt% $MnO_2$ 조성에 Pb$(Sb_{1/2}Nb_{1/2})O_3$ (PSN) (x=0.02, 0.04, 0.06, 0.08) 변화에 따른 미세구조 및 압전, 유전특성에 관해 고찰하였다. PSN 치환량이 증가함에 따라 정방정 (tetragonal)구조에서 삼방정(rhombohedral)구조로 상전이가 일어났으며, 결정립의 크기가 작아지는 것을 확인하였다. 전기기계결합계수 (kp) 는 PSN이 4 mol % 치환됨에 따라 증가하였으며, 더 이상 치환 시 감소하였다. PSN 치환에 따른 전기적 특성은, 결정구조, 결정립의 크기 및 2 차상 등의 미세구조와 긴밀한 관계가 있는 것으로 보여진다. 상경계(Morphotropic Phase Boundary) 영역인 0.96 Pb(Zr0.515Ti0.485)$O_3$ - 0.04 Pb$(Sb_{1/2}Nb_{1/2})O_3$ + 0.5wt% $MnO_2$ 조성에서 $\varepsilon{^T}_{33}/\varepsilon_o$ = 1109, $k_p$= 70.8 (%), $d_{33}$= 325 (pC/N)의 우수한 특성을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• v.6 no.5
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• pp.202-209
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• 2005

Phase evolution, microstructure and the electrical properties such as $k_p$ and $Q_m$ of $Pb(Mg_{1/3}Nb_{2/3})O_3[PMN]-Pb(Mn_{1/3}Nb_{2/3})O3[PM'N]-PbZrO_3[PZ]-PbTiO_3[PT]$ quaternary system were investigated within the compositional ranges $0{\leq}y{\leq}0.125$, y+z=0.125, and $0.39{\leq}x{\leq}0.54$ of the formula $Pb_{0.97}Sr_{0.03}[Mg_{1/3}Nb_{2/3})_y\;(Mn_{1/3}Nb_{2/3})_z\;(Zr_{x}Ti_{1-x})_{1-(y+z)}]O_3$. In the case of increasing Mn/(Mg+Mn) ratio for a fixed Zr/Ti ratio of 47.5/52.5, phase relation remained unchanged but the grain size drastically decreased, and the electrical properties changed as following: both $k_P$ and $Q_m$ reached the peak values at $Mn/(Mg+Mn)\cong0.3l7$ and gradually decreased; $\varepsilon33^T$ showed a monotonic decrease; P-E hysteresis loop gradually changed to asymmetrical one, and $E_i$ increased in correspondence. With increasing Zr/Ti ratio for a fixed Mn/(Mg+Mn) ratio of 0.317, on the contrary, the cell parameter $(\alpha^2c)^{1/3}$ gradually increased, and tetragonal-rhombohedral morphotropic phase boundary appeared in the range of $51/49{\leq}Zr/Ti{\leq}54/46$. the meantime, the grain size substantially increased, and the electrical properties changed as following: $k_P$ and $\varepsilon33^T$ reached peak values at Zr/Ti=51/49 and 48/52, respectively, and then gradually decreased; change of $Q_m$ was adverse to $k_P$; both $E_C\;and\;E_i$ considerably decreased while $P_S$ moderately increased. For the system 0.125(PMN+PM'N)-0.875PZT studied, the composition Mn/(Mg+Mn)=0.3l7 and Zr/Ti=51/49 revealed some promising electrical properties for piezoelectric transformer application such as $k_P=0.58,\;Q_m\cong1000$, and $\varepsilon^T_{33}=970$, as well as dense and fine-grained microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.15-19
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• 1998

The purpose of this study, when one prepared lead zirconate thin films by sol-gel method, was to find the preferred direction of crystal growth and dielectric characteristics for ratio of Pb and Zr. We used the Pt/Ti/$SiO_2$/Si substrate, and annealing condition was $800^{\circ}C$ for lminute. When Pb was deficient, preferred direction was <221>. And when it was stoichiometric ratio, they were grown <200> and <221> direction. But they have antiferroelectric properties, they don't appear distinct domain switching.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.201-204
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• 2009

$BaTiO_3/SrTiO_3$ and $PbTiO_3/PbZrO_3$ superlattice thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the pulsed laser deposition process. The morphologies and physical properties of deposited films were characterized by using X-ray diffractometer, HR-SEM, and Impedance Analyzer. XRD data and SEM images of the films indicate that each layer was well deposited alternatively in the superlattice structure. The dielectric constant of $BaTiO_3/SrTiO_3$ superlattice thin film was higher than that of individual $BaTiO_3$ or $SrTiO_3$ film. Same result was obtained in the $PbTiO_3/PbZrO_3$system. The dielectric constant of a superlattice film was getting higher as the number of layer is increased.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.17-23
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• 1992

A ($Pb_{1-x}Ca_{x})ZrO_{3}$ system which has a high dielectric constant, low dielectric loss and temperature coefficient was investigated. For sintering temperatures above 1350$^{\circ}C$ the microstructures of sintered bodies were unchanged regardless of the amount of CaO. The dielectric constant and dielectric loss decreased and the temperature coefficient varied from positive to negative with the increasing amount of CaO. For the CaO content of 0.37, i.e. ($Pb_{0.63}Ca_{0.37})ZrO_{3}$, the ceramic showed very good dielectric properties such as ${\varepsilon}_1$=100, Q > 1200 at 3GHz, and T$_f$=$\pm$3ppm/$^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.494-496
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• 2000

The properties of piezoelectric and dielectric for 0.05Pb$(Mn_{0.4}W_{0.2}Nb_{0.4})O_3$ - $0.95PbZr_{x}Ti_{1-x}O_{3}$ compositions have been investigated. In the composition of 0.05Pb$(Mn_{0.4}W_{0.2}Nb_{0.4})O_3$-$0.95PbZr_{0.51}Ti_{0.49}O_{3}$, the values of $k_p$ and ${\varepsilon_{33}}^T/{\varepsilon}_0$ are maximized, but $Q_m$ was minimized ($k_p$=56.5[%], $Q_m$=1130, $d_{33}$=258[pC/N], ${\varepsilon_{33}}^T/{\varepsilon}_0$=1170). The grain size was suppressed and the uniformity of gram was improved at the $1100[^{\circ}C]$. Dielectric constant increase at the Ti rich, but decrease at the Zr rich after poling. Because the dielectric constant after poling is determined by compromising effects between dipole switching and electostriction inducing stress(dielectric constant increasing factor) and dipole rotation to the poling direction (dielectric constant decreasing factor).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.375-378
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• 2015

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, $(Pb_{0.88}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ ceramics were fabricated by the conventional solid-state method. Electrocaloric effects of $(Pb_{0.88}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ ferroelectric ceramics were investigated and discussed using the characteristics of P-E hysteresis loops at wide temperature range from room temperature to $220^{\circ}C$. The temperature change ${\Delta}T$ due to the electrocaloric effect was calculated by Maxwell's relations, and reached the maximum of ~0.19 at $190^{\circ}C$ under applied electric field of 30 kV/cm.