• Title/Summary/Keyword: Pb(Zr, Ti)O$_3$ thin

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The Influences of Residual Stress on the Frequency of Ultrasonic Transducers with Composite Membrane Structure

  • Lee Seungmock;Kim Jong-Min;Shin Young-Eui
    • Journal of Mechanical Science and Technology
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    • v.20 no.1
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    • pp.76-84
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    • 2006
  • Arrayed ultrasonic sensors based on the piezoelectric thin film (lead-zirconate-titanate: Pb($Zr_{0.52}Ti_{0.48})O_{3}$) having composite membrane structure are fabricated. Different thermal and elastic characteristics of each layer generate the residual stress during the high temperature deposition processes, accomplished diaphragm is consequently bowing. We present the membrane deflection effects originated from the residual stress on the resonant frequencies of the sensor chips. The resonant frequencies ($f_r$) measured of each sensor structures are located in the range of $87.6{\sim}111\;kHz$, these are larger $30{\sim}40\;kHz$ than the resultant frequencies of FEM. The primary factors of $f_r$ deviations from the ideal FEM results are the membrane deflections, and the influence of stiffness variations are not so large on that. Membrane deflections have the effect of total thickness increase which sensitively change the $f_r$ to the positive direction. Stress generations of the membrane are also numerically predicted for considering the effect of stiffness variations on the $f_r$.

Sol-gel Mechanism of Self-patternable PZT Film Starting from Alkoxides Precursors

  • Hwang, Jae-Seob;Kim, Woo-Sik;Park, Hyung-Ho;Kim, Tae-Song
    • Journal of the Korean Ceramic Society
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    • v.40 no.4
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    • pp.385-392
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    • 2003
  • Sol-gel preparation technique using a chemical reaction of metal alkoxides has been widely used for the fabrication of various materials including ceramics. However, its mechanism has been studied till now because a number of chemical ways are possible from various alkoxides and additives. In this study, the mechanism of hydrolysis, condensation, and polymerization of alkoxides were investigated from the fabrication of lead-zirconate-titanate (PbZr$\_$x/Ti$\_$l-x/O$_3$; PZT) thin film that is used as various micro-actuator, transducer, and sensor because of its high electro-mechanical coupling factors and thermal stability. Furthermore, the fabrication process and characteristics of self-patternable PZT film using photosensitive stabilizer were studied in order to resolve the problem of physical damage and properties degradation during dry etching for device fabrication. Using an optimum condition to prepare the self-patternable PZT film, more than 5000 ${\AA}$ thick self-patternable PZT film could be fabricated by three times coating. The PZT film showed 28.4 ${\mu}$c/cm$^2$ of remnant polarization (Pr) and 37.0 kV/cm of coercive field (E$\_$c/).

High Performance Piezoelectric Microspeakers and Thin Speaker Array System

  • Kim, Hye-Jin;Koo, Kun-Mo;Lee, Sung-Q;Park, Kang-Ho;Kim, Jong-Dae
    • ETRI Journal
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    • v.31 no.6
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    • pp.680-687
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    • 2009
  • This paper reports on an improved piezoelectric microspeaker with a high sound pressure level of 90 dB, a total harmonic distortion of less than 15%, and coherence higher than 0.9. The fabricated Pb(Zr,Ti)$O_3$ (PZT) microspeakers have a thickness of only 1 mm including the speaker frame and an active area of 18 mm${\times}$20 mm. To achieve higher sound pressure and lower distortion, the PZT piezoelectric microspeaker has a well-designed speaker frame and a piezoelectric diaphragm consisting of a tilted PZT membrane and silicone buffer layer. From the simulation and measurement results, we confirmed that the silicon buffer layer can lower the first resonant frequency, which enhances the microspeaker's sound pressure at a low frequency range and can also reduce useless distortion generated by the harmonics. The fabricated PZT piezoelectric microspeakers are implemented on a multichannel speaker array system for personal acoustical space generation. The output sound pressure at a 30 cm distance away from the center of the speaker line array is 15 dB higher than the sound pressure at the neighboring region 30 degrees from the vertical axis.

Structural Analysis and Characterization of PZT Fiber Fabricated by Electrospinning (Electrospinning법으로 제조된 PZT 섬유의 구조분석 및 특성평가)

  • Park, Chun Kil;Yun, Ji Sun;Jeong, Young Hun;Nam, Joong-Hee;Cho, Jeong Ho;Paik, Jong-Hoo;Jeong, Dae Young
    • Journal of the Korean Ceramic Society
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    • v.50 no.6
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    • pp.466-469
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    • 2013
  • Currently, piezoelectric ceramics are being applied in various fields, such as ultrasonic sensors, vibration devices, sound filters, and various energy conversion devices. Flexible piezoelectric ceramics are widely studied in an effort to mitigate the disadvantages of their brittle and inductile properties. Structural damage to piezoelectric fibers is much less than that to thin films when piezoelectric fibers are twisted or bent. Therefore, stretchable devices can be fabricated if piezoelectric fibers are obtained using an elongated substrate. In this study, sintering processes of PZT ($Pb(Zr_{0.53}Ti_{0.47})O_3$) fibers prepared by electrospinning were optimized through the TGA and XRD analyses. The crystal structure and microstructure of the piezoelectric fibers were investigated by XRD, FE-SEM and TEM.

Step-down Piezoelectric Transformer Using PZT PMNS Ceramics

  • Lim Kee-Joe;Park Seong-Hee;Kwon Oh-Deok;Kang Seong-Hwa
    • KIEE International Transactions on Electrophysics and Applications
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    • v.5C no.3
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    • pp.102-110
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    • 2005
  • Piezoelectric transformers(PT) are expected to be small, thin and highly efficient, and which are attractive as a transformer with high power density for step down voltage. For these reasons, we have attempted to develop a step-down PT for the miniaturized adaptor. We propose a PT, operating in thickness extensional vibration mode for step-down voltage. This PT consists of a multi-layered construction in the thickness direction. In order to develop the step-down PT of 10 W class and turn ratio of 0.1 with high efficiency and miniaturization, the piezoelectric ceramics and PT designs are estimated with a variety of characteristics. The basic composition of piezoelectric ceramics consists of ternary yPb(Zr$_{x}$Ti$_{1-x}$)O$_{3}$-(1-y)Pb(Mn$_{1/3}$Nb1$_{1/3}$Sb$_{1/3}$)O$_{3}$. In the piezoelectric characteristics evaluations, at y=0.95 and x=0.505, the electromechanical coupling factor(K$_{p}$) is 58$\%$, piezoelectric strain constant(d$_{33}$) is 270 pC/N, mechanical quality factor(Qr$_{m}$) is 1520, permittivity($\varepsilon$/ 0) is 1500, and Curie temperature is 350 $^{\circ}C$. At y = 0.90 and x = 0.500, kp is 56$\%$, d33 is 250 pC/N, Q$_{m}$ is 1820, $\varepsilon$$_{33}$$^{T}$/$\varepsilon$$_{0}$ is 1120, and Curie temperature is 290 $^{\circ}C$. It shows the excellent properties at morphotropic phase boundary regions. PZT-PMNS ceramic may be available for high power piezoelectric devices such as PTs. The design of step-down PTs for adaptor proposes a multi-layer structure to overcome some structural defects of conventional PTs. In order to design PTs and analyze their performances, the finite element analysis and equivalent circuit analysis method are applied. The maximum peak of gain G as a first mode for thickness extensional vibration occurs near 0.85 MHz at load resistance of 10 .The peak of second mode at 1.7 MHz is 0.12 and the efficiency is 92$\%$.

Fabrication and Characteristics of Micro PZT Cantilever Energy Harvester Using MEMS Technologies (MEMS 공정을 이용한 마이크로 PZT 외팔보 에너지 수확소자의 제작 및 특성)

  • Kim, Moon-Keun;Hwang, Beom-Seok;Jeong, Jae-Hwa;Min, Nam-Ki;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.6
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    • pp.515-518
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    • 2011
  • In this work, we designed and fabricated a multilayer thin film Pb(Zr,Ti)$O_3$ cantilever with a Si proof mass for low frequency vibration energy harvesting applications. A mathematical model of a mu lti-layer composite beam was derived and applied in a parametric analysis of the piezoelectric cantilever. Finally, the dimensions of the cantilever were determined for the resonant frequency of the cantilever. W e fabricated a device with beam dimensions of about 4,930 ${\mu}M$ ${\times}$ 450 ${\mu}M$ ${\times}$ 12 ${\mu}M$, and an integrated Si proof mass with dimensions of about 1,410 ${\mu}M$ ${\times}$ 450 ${\mu}M$ ${\times}$ 450 ${\mu}M$. The resonant frequency, maximum peak voltage, and highest average power of the cantilever device were 84.5 Hz, 88 mV, and 0.166 ${\mu}Wat$ 1.0 g and 23.7 ${\Omega}$, respectively. The dimensions of the cantilever were determined for the resonance frequency of the cantilever.