• Title/Summary/Keyword: Pattern density function

Search Result 117, Processing Time 0.025 seconds

Super subtractive process of FPC for small size LCD module

  • See, S.K.
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2004.08a
    • /
    • pp.975-977
    • /
    • 2004
  • According to thin and light form-factor and additional function of today's electronic devices, it is required to decrease the pattern pitch of FPC. The high density demand is more and more important trend especially, for small size LCD module. Based on this requirement, the manufacturing process is advancing from subtractive method to super subtractive method.

  • PDF

Effects of Flow Diretion and Annular Gap Size on the Flow Pattern and Void Distribution in a Vertical Two-Phase Flow(I) - In Case of Upward Flow - (수직이상유에서 유동방향과 동심원관 간극이 유동양식과 보이드분포에 미치는 영향 (I))

  • 손병진;김인석;김문철
    • Transactions of the Korean Society of Mechanical Engineers
    • /
    • v.11 no.5
    • /
    • pp.856-866
    • /
    • 1987
  • In the present paper a statistical method using probability density function has been applied to investigate experimentally the flow patterns and fluctuations of time-averaged local void fraction in air-water two-phase mixtures which flow vertically upwards in concentric annuli. This study was carried out using three vertical concentric annuli. The annular test section consists of a lucite outer tube whose inside diameter is 38mm and a stainless steel inner rod. The rod diameter is either 12mm, 16mm or 20mm. The two-phase flow patterns observed in the experiment were bubbly, slug, annular and each transition patterns. It was first demonstrated that the variance, coefficients of skewness and kurtosis calculated from probability density function on time-averaged local void fraction can be used to identify the flow patterns in the annular passage, and the fluctuation of time-averaged local void fraction varies with the radial position in annular gap and the flow pattern.

An approach to visual pattern recognition by neural network system

  • Hatakeyama, Yasuhiro;Kakazu, Yukinori
    • 제어로봇시스템학회:학술대회논문집
    • /
    • 1992.10b
    • /
    • pp.61-64
    • /
    • 1992
  • In this paper, a visual pattern recognition system is proposed, which can recognize both a pattern and its location. This system, referred to as the expanded neocognitron, has the following capabilities: (1) A higher performance in extraction of features, and (2) A new capability for recognizing the locations of patterns. This system adopts the learning and recognizing mechanism of the neocognitron. First, the ability to classify pattern is enhanced by improving the mechanisms of feature extraction and learning algorithm. Second, the function of detecting the location of each pattern is realized by developing an architecture which does not reduce structure, i.e., the unit density is constant all the way from the input stage to the output stage.

  • PDF

MULTIPLE PEGYLATION OF PANCREATIC ISLETS FOR IMMUNOPROTECTION IN ISLET TRANSPLANTATION

  • Yang, Kyung-Wook;Lee, Moon-Kyu;Byun, Young-Ro
    • 한국생물공학회:학술대회논문집
    • /
    • 2000.11a
    • /
    • pp.695-698
    • /
    • 2000
  • We studied the viability and function of islet with monomethoxy polyethylene glycol (mPEG) grafted onto its membrane. Islets were isolated from rat and were repeatedly reacted with activated mPEG (mw 5000) in order to increase grafting density. The density of grafted PEG on the islet membrane was confirmed by Fluorescein-PEG-NHS. An assessment of islet viability using AO / PI staining method showed that multiple PEGylation did not reduce islet viability. The function of PEG grafted islets was evaluated by measuring released insulin from islets. Insulin secreted from the PEGylated islets for 1 h did not show any significant difference compared to control (non-PEGylated) islets. In addition, PEGylated islets responded in the same pattern as control islets in the perifusion test.

  • PDF

Fixed Abrasive Pad with Self-conditioning in CMP Process (Self-conditioning 고정입자패드를 이용한 CMP)

  • Park, Boumyoung;Lee, Hyunseop;Park, Kihyun;Seo, Heondeok;Jeong, Haedo;Kim, Hoyoun;Kim, Hyoungjae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.4
    • /
    • pp.321-326
    • /
    • 2005
  • Chemical mechanical polishing(CMP) process is essential technology to be applied to manufacturing the dielectric layer and metal line in semiconductor devices. It has been known that overpolishing in CMP depends on pattern selectivity as a function of density and pitch, and use of fixed abrasive pad(FAP) is one method which can improve the pattern selectivity. Thus, dishing & erosion defects can be reduced. This paper introduces the manufacturing technique of FAP using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. When applied to tungsten blanket wafers, the FAP resulted in appropriate performance in point of uniformity, material selectivity and roughness. Especially, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with the proposed FAP.

The Characteristics of CMP Polishing Pad (CMP 패드의 Groove 특성)

  • Kim, Chul-Bok;Park, Sung-Woo;Kim, Sang-Yong;Lee, Woo-Sun;Chang, Eui-Goo;Seo, Yong-Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2004.11a
    • /
    • pp.715-718
    • /
    • 2004
  • In this paper, we studied the characteristics of new polishing pad, which can apply W-CMP process for global planarization of multi-level interconnection structure. The hardness and density were measured as a function of groove pattern. Also, we compared the pore size through the SEM photograph. Finally, we investigated the CMP characteristics with five different kind of groove pattern sample. Through the above results, we can select optimum groove pattern, so we can expect to begin home product of polishing pad.

  • PDF

Effects of Annular Gap Size on the Flow Pattern and Void Distribution in a Vertical Upward Two-Phase Flow (수직상향 이상류에서 동심원관 간극이 유동양식과 보이드분포에 미치는 영향)

  • Son B. J.;Kim I. S.;Kim M. C.
    • The Magazine of the Society of Air-Conditioning and Refrigerating Engineers of Korea
    • /
    • v.16 no.4
    • /
    • pp.383-391
    • /
    • 1987
  • An experimental investigation has been conducted to determine the flow pattern for two-component , two-phase mixtures which flow vertically upwards in concentric annuli based on the measurement for the local void fraction and the distribution of the local void fraction in various radial locations in the annular gap. The annular test section consists of a lucite outer tube whose inside diameter is 38mm and a stainless steel rod, The rod diameter is either :2mm,16mm or 20mm. It is demonstrated that the probability density function of the fluctuations in void fraction may be used as an flow pattern indicator and the local void fraction distribution depends on the flow pattern and radial location in the annular passage.

  • PDF

Calculation of Critical Current Density Degradation in the HTS Magnet due to Mechanical Strain (고온초전도마그네트 내부의 스트레인에 의한 임계전류밀도 감소 계산)

  • Lee, In-Kyu;Nah, Wan-Soo
    • Proceedings of the KIEE Conference
    • /
    • 1997.07a
    • /
    • pp.260-263
    • /
    • 1997
  • In this paper, we describe the mechanical strain effects on the critical current density of HTS (BSCCO) pancake-type-magnet. Firstly the strain of pancake coil is calculated in terms of coil length, which is also a function of angle, and then the critical current density degradation due to strain is calculated along the coil. We assumed that the critical current density degradation pattern is same with that of $Nb_{3}Sn$. We also modelled the effects of magnetic field on the critical curent degradation, and the results are compared with those with null magnetic field.

  • PDF

Chemical Mechanical Polishing Characteristics of BTO Thin Film for Vertical Sidewall Patterning of High-Density Memory Capacitor (고집적 메모리 커패시터의 Vertical Sidewall Patterning을 위한 BTO 박막의 CMP 특성)

  • Ko, Pil-Ju;Park, Sung-Woo;Lee, Kang-Yeon;Lee, Woo-Sun;Seo, Yong-Jin
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.55 no.3
    • /
    • pp.116-121
    • /
    • 2006
  • Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

A Study on the Size and Shape Pattern Normalization of Hand-Written Hangul Patterns (필기체 한글문자의 크기 및 형태정규화에 관한 연구)

  • 안석출;김명기
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.11 no.5
    • /
    • pp.332-339
    • /
    • 1986
  • This paper proposes a new method for the normalization of shape pattern based on Gaussian probability density function to increase automatic recognition rate of hand-written Hangul pattern. The sizes of hand-written Hangul pattern are detected from the input images, and pattern sizes are normalized by two variables interpolation. The pattrn shapes are noralized by letting correlation coefficients equal to zero. It is analyzed theoretically and verified through computer simulation for the relation between input image and normaized shape pattern. It is confirmed that this method is effective and reasonable for deformed hand-written Hangul pattern. Experimental resu results show that the declination. size and stroke width of hand-written Hangul patterns are mych improved.

  • PDF