• Bulletin of the Korean Chemical Society
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• v.10 no.6
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• pp.485-488
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• 1989

A carbon paste coated-wire ion-selective electrode for chloride (carbon chloride-CWE) was constructed using epoxy resin, ion-exchanger and carbon powder as a polymer membrane. Its utility, the composition of a polymer membrane, the response characteristics, and the selectivity were examined and applied to the environmental water analysis. The carbon chloride-CWE was prepared using a silver wire, which was covered with silver chloride and then coated with epoxy resin into which chloride ion-exchanger and carbon powder were previously incorporated in advance. The response of the carbon chloride-CWE was Nernstian for $1.0{\times}10^{-2}-2{\times}10^{-5}$ M chloride and the useful pH range from $10^{-2} M Cl- to 10^{-4} M Cl^-$ was 3.0-9.0. Furthermore, the selectivity of chloride over iodide, bromide, and cyanide was much improved compared with those for a solid state epoxy body chloride electrode and a liquid membrane chloride electrode. The carbon chloride-CWE was applied to determine Cl^-$ in tap and ground water. The obtained results were in good agreement with those by the established methods such as spectrophotometric or other chloride-selective electrode methods.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2006.05a
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• pp.878-881
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• 2006

In this paper, the luminance and resistance from different electrode materials of external electrode fluorescent lamp are measured and analyzed. New materials and process technology of external electrode are very important for the developed characteristics in lamp fabrication. In this experiments, three different types for the forming of external electrode are Cu and Al taping, silver paste, Ni and Cu electrode-less plating methods. In the measurements of luminance, the results of brightness by Ni and Au plating methods for the external electrode on lamp glass are presented and also compared with the results by the methods using different electrode materials. The measured resistance values of Ni and Au plating process showed a little bit higher than that of silver paste process in spite of developed results of brightness. But the Ni and Ni/Au plating processes are demonstrated best results and are also showed a little bit different brightness due to different previous sulfate etching treatments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.3
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• pp.549-554
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• 2007

In this paper, the luminance and resistance from different electrode materials of external electrode fluorescent lamp are measured and analyzed. New materials and process technology of external electrode are very important for the developed characteristics in lamp fabrication. This experiment, three different types for the forming of external electrode are Cu and Al taping, silver paste, Ni and Cu electrode-less plating methods. In the measurement of luminance, the results of brightness by Ni and Au plating methods for the external electrode on lamp glass are presented and also compared with the results by the methods using different electrode materials. The measured resistance values of Ni and Au plating process showed a little bit higher than that of silver paste process in spite of developed results of brightness. The Ni and Ni/Au plating processes are demonstrated best results and also showed a little bit different brightness due to different previous surface etching treatments.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.617-618
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• 2011

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

• Current Photovoltaic Research
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• v.4 no.4
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• pp.145-149
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• 2016

Characteristic of aluminum-silicon alloy paste which is applied on the rear side of PERC cell was investigated. The paste was made by aluminum-silicon alloy with eutectic composition to avoid the formation of void which is responsible for the degradation of the open-circuit voltage. Also, the glass frit component of the paste was changed to improve the adhesion of aluminum-silicon paste. We observed the formation of void and local back surface field between aluminum electrode and silicon base by SEM. The light IV, quantum efficiency and reflectance of the solar cells were characterized and compared for each paste.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.16-20
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• 2015

In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.37-42
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• 2019

This study investigates Ag coated $Cu_2O$ nanoparticles that are produced with a changing molar ratio of Ag and $Cu_2O$. The results of XRD analysis reveal that each nanoparticle has a diffraction pattern peculiar to Ag and $Cu_2O$ determination, and SEM image analysis confirms that Ag is partially coated on the surface of $Cu_2O$ nanoparticles. The conductive paste with Ag coated $Cu_2O$ nanoparticles approaches the specific resistance of $6.4{\Omega}{\cdot}cm$ for silver paste(SP) as $(Ag)/(Cu_2O)$ the molar ratio increases. The paste(containing 70 % content and average a 100 nm particle size for the silver nanoparticles) for commercial use for mounting with a fine line width of $100{\mu}m$ or less has a surface resistance of 5 to $20{\mu}{\Omega}{\cdot}cm$, while in this research an Ag coated $Cu_2O$ paste has a larger surface resistance, which is disadvantageous. Its performance deteriorates as a material required for application of a fine line width electrode for a touch panel. A touch panel module that utilizes a nano imprinting technique of $10{\mu}m$ or less is expected to be used as an electrode material for electric and electronic parts where large precision(mounting with fine line width) is not required.

• Bulletin of the Korean Chemical Society
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• v.29 no.11
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• pp.2264-2266
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• 2008

• Journal of the Korean Society for Precision Engineering
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• v.30 no.6
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• pp.578-583
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• 2013

The lighting devices using organic light emitting diodes (OLEDs) are actively researched because of the various advantages such as high power efficiency and 2-dimensitonal lighting emitting. To commercialize those OLED lighting devices, the manufacturing cost must be downed to comparable price with conventional light sources. Here, we demonstrate a reverse gravure-offset or gravure off-set printed metal electrode for the auxiliary electrode for OLED lighting devices. For the fabricated OLED's auxiliary electrode, we used Ag nano-paste and printed metal grid structure with a line width and spacing of several ten and hundred micrometer by using gravure-offset printing. In the end the printing metal grid pattern are successfully achieved by optimization of various experimental conditions such as printing pressure, printing speed and printing delay time.