• Transactions of the Korean hydrogen and new energy society
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• v.1 no.1
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• pp.48-54
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• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• Bulletin of the Korean Chemical Society
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• v.15 no.11
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• pp.976-980
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• 1994

The sensitivity factors and the error propagation factors are defined for the three-parameter ellipsometry (TPE). The sensitivity factor is useful for understanding the nature of the TPE measurements in connection with determination of the optical properties and the thickness of a film. On the other hand, the error propagation factors provide a quantitative tool for predicting the optimum condition for TPE experiments. Their usefulness is demonstrated for the passive film formed on nickel in aqueous solution.

• Journal of Power Electronics
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• v.2 no.3
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• pp.171-180
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• 2002

New 42-volt automotive electrical systems can provide significant improvements in vehicle performance and fuel economy. It is crucial to provide protection against load dump and other overvoltage transients in 42-volt systems. While advanced active control techniques are generally considered capable of providing such protection, the use of passive transient voltage suppression (TVS) devices as a secondary or supplementary protection means can significantly improve design flexibility and reduce system costs. This paper examines the needs and options for passive TVS devices for 42-volt applications. The limitations of the commonly available automotive TVS devices, such as Zener diodes and metal oxide varistors (MOV), are analyzed and reviewed. A new TVS device concept, based on power MOSFET and thin-film polycrystalline silicon back-to-back diode technology, is proposed to provide a better control on the clamp voltage and meet the new 42-volt specification. Both experimental and modeling results are presented. Issues related to the temperature dependence and energy absorbing capability of the new TVS device are discussed in detail. It is concluded that the proposed TVS device provides a cost-effective solution for load dump protection in 42-volt systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.348-348
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• 2008

In recent, the concept of system-on-package (SOP) for highly integrated multifunctional systems has been paid attention to for the miniaturization and high frequency of electronic devices. In order to realize SOP, co-integration of passive devices, such as capacitors, resistors and inductors, and active devices should be achieved. If ceramic thick films can be grown at room temperature, we expect to be able to overcome many problems in conventional fabrication processes. So, we focused on the aerosol deposition method (ADM) as room temperature fabrication technology. ADM is a novel ceramic coating method based on the Room Temperature Impact Consolidation (RTIC) phenomena. This method has a wide range potential for fabrication of co-integration of passive and active devices. In this paper, I will present the future potential of ADM introducing various ceramic dielectric thick films for the integration of electronic ceramics.

• Journal of Sensor Science and Technology
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• v.20 no.2
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• pp.114-117
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• 2011

A thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated and then thin 1.6 ${\mu}m$ thickness P(VDF/TrFE) film pyroelectric infrared ray sensor has been fabricated also. These thick and thin P(VDF/TrFE) film pyroelectric infrared ray sensor was mounted in TO-5 housing to detect infrared light of 5.5 ~ 14 ${\mu}m$ wavelength for human body detecting with each other. The noise output voltage of the thick P(VDF/TrFE) film pyroelectric infrared ray sensor were 380 mV and NEP(noise equivalent power) is $3.95{\times}10^{-7}$ W which is the similar value with the commercial pyroelectric infrared ray sensor using ceramic materials as a sensing material. The NEP and specific detectivity $D^*$ of the thin P(VDF/TrFE) film pyroelectric infrared ray sensor were $2.13{\times}10^{-8}$ W and $9.37{\times}106$ cm/W under emission energy of 13 ${\mu}W/cm^2$ respectively. These result caused by lower thermal diffusion coefficient of a thin 1.6 ${\mu}m$ thickness PVDF/TrFE film than the thick 25 ${\mu}m$ thickness poled P(VDF/TrFE) film pyroelectric infrared ray sensor.

• Journal of the Korean Society of Radiology
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• v.15 no.6
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• pp.781-788
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• 2021

Due to the high sensitivity to radiation, excessive exposure needs to be prevented by accurately measuring the dose irradiated to the skin during radiation therapy. Although clinical trials use dosimeters such as film, OSLD, TLD, glass dosimeter, etc. to measure skin dose, these dosimeters have difficulty in accurate dosimetry on skin curves. In this study, to solve these problems, we developed a skin dosimeter that can be attached according to human flexion and evaluated its response characteristics. For the manufacture of the dosimeter, lead oxide (PbO) with high atomic number (Z_Pb: 82, Z_O: 8) and density (9.53 g/cm³) and silicon binders that can bend according to human flexion were used. In the case of a dosimeter made of PbO material, the performance degradation has been prevented by using parylene and others due to the presence of degradation due to oxidation, but the previously used parylene is affected by bending, so a new form of passive layer was produced and applied to the skin dosimeter. The characteristic evaluation of the skin dosimeter was evaluated by analyzing SEM, reproducibility, and linearity. Through SEM analysis, bending was evaluated, reproducibility and linearity at 6 MeV energy were evaluated, and applicability was assessed with a skin dosimeter. As a result of observing the dosimeter surface through SEM analysis, the parylene passive layer PbO dosimeter with the positive layer raised to the parylene produced cracks on the surface when bent. On the other hand, no crack was observed in the silicon passive layer PbO dosimeter, which was raised to silicon passive layer. In the reproducibility measurement results, the RSD of the silicon passive layer PbO dosimeter was 1.47% which satisfied the evaluation criteria RSD 1.5% and the linearity evaluation results showed the R² value of 0.9990, which satisfied the evaluation criteria R² 9990. The silicon passive layer PbO dosimeter was evaluated to be applicable to skin dosimeters by demonstrating high signal stability, precision, and accuracy in reproducibility and linearity, without cracking due to bending.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.9
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• pp.1615-1620
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• 2010

A thin film thermoelectric cooler for COB direct assembly was proposed and the COB cooler structure was modeled by electrical equivalent circuit by using SPICE model of thermoelectric devices. The embedded cooler attached between the die chip and metal plate can offer the possibility of thin film active cooling for the COB direct assembly. We proposed a driving method of TEC by using pulse width modulation technique. The optimum power to the TEC is simulated by using a SPICE model of thermoelectric device and passive components representing thermal resistance and capacitance. The measured and simulated results offer the possibility of thin film active cooling for the COB direct assembly.

• Journal of Biomedical Engineering Research
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• v.14 no.4
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• pp.333-340
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• 1993

The high biocompatibility of titanium is connected with the high corrosion resistance of the surface oxide, its high dielectric constant, and some other specific biochemical properties of the oxide. The corrosion resistance of titanium can be improved with the formation of passive film by anodic oxidation. In other to characterize the titantium oxlde film formed by anodic oxidation, titanium plates were anodized in 0.5M $H_3SO_4$ electrolyte at voltages between 5V and 100v. The oxide film was examined by an X-Ray Diffractometer(XRD) and a Scanning Electron Microscope(SEM). In addition, the corrosion resistance of oxide film was tested by dipping in physiological NaCl,5% HCI,5% $H_3PO_4$ and its biocompatability was evaluated by the fibroblast-like cell culture. The results obtained are as follows : 1. The thickness of surface oxide and micropore are increased with the increase of electrode potential and formed deeply along the grain boundary. 2. The solubilities of titanium in electrolyte solution shows that the anodized titanium has more corrosion resistance than the untreated pure titanium. 3. The biocomatibility of anodized titanium is superior to untreated pure titanium.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.10a
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• pp.358-363
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• 1995

A study on passive cooling systems for concrete containment of advanced pressurized water reactors has been performed. The proposed passive containment cooling system (PCCS) consist of (1) condenser units located inside containment, (2) a steam condensing pool outside containment at higher elevation, and (3) downcommer/riser piping systems which provide coolant flow paths. During an accident causing high containment pressure and temperature, the steam/air mixture in containment is condensed on the outer surface of condenser tubes transferring the heat to coolant flowing inside tubes. The coolant transfers the heat to the steam condensing pool via natural circulation due to density difference. This PCCS has the following characteristic: (1) applicable to concrete containment system, (2) no limitation in plant capacity expansion, (3) efficient steam condensing mechanism (dropwise or film condensation at the surface of condenser tube), and (4) utilization of a fully passive mechanism. A preliminary conceptual design work has been done based on steady-state assumptions to determine important design parameter including the elevation of components and required heat transfer area of the condenser tube. Assuming a decay power level of 2%, the required heat transfer area for 1,000MWe plant is assessed to be about 2,000 ㎡ (equivalent to 1,600 of 10 m-long, 4-cm-OD tubes) with the relative elevation difference of 38 m between the condenser and steam condensing pool and the riser diameter of 0.62 m.