• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.42-42
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• 2010

We have characterized the previously undescribed parameters for engineering the electrical properties of single-walled carbon nanotube (SWCNT) films for technological applications. The surface tension of the top coating passivation material and matching coefficients of thermal expansion for the substrate and carbon nanotube network are two crucial parameters for the fabrication of reliable and highly conductive single-walled carbon nanotube network thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.278-278
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• 2010

We have characterized the previously undescribed parameters for engineering the electrical properties of single-walled carbon nanotube (SWCNT) films for technological applications. The surface tension of the top coating passivation material and matching coefficients of thermal expansion for the substrate and carbon nanotube network are two crucial parameters for the fabrication of reliable and highly conductive single-walled carbon nanotube network thin films.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.309-313
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• 2006

We demonstrated 2.2inch qqVGA AMOLED display drived by ultra low temperature poly-Si (ULTPS) TFT not transferred but direct fabricated below $200^{\circ}C$. Si channel was crystallized by decreasing impurity concentration even at room temperature. Gate insulator with a breakdown field exceeding 8 MV/cm was realized by Inductively coupled plasma - CVD. In order to reduce stress of plastic, organic film was coated as inter-dielectric and passivation layers. Finally, ULTPS TFT of which mobility is over $20cm^2/Vsec$ was fabricated on transparent plastic substrate and drived OLED display successfully.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.198-198
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• 2013

Metal-Oxide-Semiconductor (MOS)에서 사용되는 다양한 channel materials로 high electron mobility을 가지는 III-V compound semiconductor가 대두되고 있다 [1,2]. 하지만 이러한 III-V compound semiconductor는 Si에 비해 안정적인 native oxide가 부족하기 때문에 Si, Ge, Al2O3과 BeO 등과 같은 다양한 물질들의 interface passivation layers (IPLs)에 대한 연구가 많이 되고 있다. 이러한 IPLs 물질은 0.5~1.0 nm의 매우 얇은 physical thickness를 가지고 있고 또한 chemical inert하기 때문에 플라즈마 식각에 대한 연구가 되고 있지만 IPLs 식각 후 기판인 III-V compound semiconductor에 physical damage과 substrate recess를 줄이기 위해서 높은 선택비가 필요하다. 이러한 식각의 대안으로 원자층 식각이 연구되고 있으며 이러한 원자층 식각은 반응성 있는 BCl3의 adsorption과 low energy의 Ar bombardment로 desorption으로 self-limited한 one monolayer 식각을 가능하게 한다. 그러므로 본 연구에서는, III-V compound semiconductor 위에 IPLs의 adsorption과 desorption의 cyclic process를 이용한 원자층식각으로 다양한 물질인 SiO2, Al2O3 (self-limited one monolayer etch rate=about 1 ${\AA}$/cycle), BeO (self-limited one monolayer etch rate=about 0.75 ${\AA}$/cycle)를 얻었으며 그 결과 precise한 etch depth control로 minimal substrate recess 식각을 할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.732-734
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• 1998

Metal thin films such as aluminum have been used as interconnects in semiconductor device. Recently, these materials are applied to structural materials in microsensors and microactuators. In this study, we evaluate deformation and strength behavior of aluminum alloy film. Three layer model for thermal deformation of multilayered thin film material is introduced and applied to Si/Al(1%Si)/$SiO_2$ system. Based on beam bending theory and concept of bending strain. elastic and elastic/plastic thermal deformation behaviors of multilayered materials can be estimated. In the case of plastic deformation of ductile layer, strain rate equations based on deformation mechanism map are employed for describe the stress relaxation effect. To experimentally examine deformation of multilayered thin film materials, in-situ laser scanning method is used to measure curvature of specimens during heating and cooling. The thickness of $SiO_2$ layer is varied to estimate third-layer effect of thermal deformation of metal films, and its effect on deformation behavior are discussed.

• Corrosion Science and Technology
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• 제6권6호
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• pp.311-315
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• 2007

The anodic polarization behavior of equiatomic TiNi shape memory alloy with pure titanium as a reference material was investigated by means of open circuit potential measurement and potentiodynamic polarization technique. And the structure of passive films on TiNi intermetallic compounds was also conducted using AES and ESCA. While the dissolved Ni(II) ion did not affect the dissolution rate and passivation of TiNi alloy, the dissolved Ti(III) ion was oxidated to Ti(IV) ion on passivated TiNi surface at passivation potential. It has also been found that the Ti(IV) ion increases the steady state potential, and passivates TiNi alloy at a limited concentration of Ti(IV) ion. The analysis by AES showed that passive film of TiNi alloy was composed of titanium oxide and nickel oxide, and the content of titanium was three times higher than that of nickel in outer side of passive film. According to the ESCA analysis, the passive film was composed of $TiO_2$ and NiO. It seems reasonable to suppose that NiO could act as unstabilizer to the oxide film and could be dissolved preferentially. Therefore, nickel oxide contained in the passive film may promote the dissolution of the film, and it could be explained the reason of higher pitting susceptibility of TiNi alloy than pure Ti.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.156-159
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• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• Current Photovoltaic Research
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• 제11권3호
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• pp.87-95
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• 2023

As the demand for the Internet of Things grows, research into indoor photovoltaics for wireless power is becoming important. In particular, perovskite has attracted considerable attention due to its superior performance compared to other candidates. However, various surface defects present in perovskite are a limiting factor for high performance. In particular, deep-level surface defects caused by uncoordinated Pb²⁺ ions directly limit charge transport. In low light environments, this appears to be a more significant hurdle. In this study, ethylenediamine, which can provide covalent bonding to uncoordinated Pb²⁺ ions through nitrogen, was used as a surface treatment material for indoor photovoltaics. X-ray photoelectron spectroscopy confirmed that the uncoordinated Pb²⁺ ions were effectively passivated by the terminal nitrogen of ethylenediamine. As a consequence, a V_OC of 0.998 V, a JSC of 0.139 mA cm^-2 and a fill factor of 83.03% were achieved, resulting in an indoor photoelectric conversion efficiency of 38.02%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.446-446
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• 2009

표면 패시베이션 기술로 이용되는 수소화된 실리콘 질화막은 제조원가의 절감을 위한 실리콘 기판재료의 두께 감소에 따른 특성상의 문제점을 해결하기 위해 중요한 영향을 미치는 요소이다. 실리콘 질화막은 강한 기계적 강도, 우수한 유전적 특성, 수문에 의한 부식과 유동적 이온에 대한 우수한 저항력 때문에, 반도체 소자 산업에서 널리 사용되고 있다. 수소화된 실리콘 질화막은 반사방지 특성과 함께 표면 패시베이션의 질을 향상시킬 수 있다. 굴절률 1.9 ~ 2.3 범위에서 쉽게 변화 가능한 수소화된 실리콘 질화막은 굴절률 1.4 ~ 1.5 사이의 열적 산화막 보다 효과적인 반사방지막이다. 수소화된 실리콘 질화막을 사용한 태양전지에서는 효율을 높이기 위해서 기판 표면에서의 케리어 재결합이 억제되어져야한다. 또한, 수소화된 실리콘 질화막은 최적화된 두께와 굴절률을 가져야한다. 본 연구에서는 고효율 태양전지에 적용하기 위해 반송자 수명이 향상된 수소화된 실리콘 질화막을 플라즈마 화학 기상 증착법을 이용하여 증착하였다. 박막은 $250^{\circ}C\;{\sim}\;450^{\circ}C$에서 증착되었으며 증착된 박막은 1.94 to 2.05 굴절률 값을 가지고 있다. 반송자 수명을 증가시키기 위해 $650^{\circ}C\;{\sim}\;950^{\circ}C$에서 어닐링 하였고 반송자 수명을 측정하여 패시베이션 특성을 분석하였다. 수소화된 실리콘 질화막은 $850^{\circ}C$의 어닐링 온도와 굴절률 2.0 조건에서 가장 좋은 반송자 수명을 나타냈다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.189-192
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• 2004

To improvement life-time of the organic light emitting diodes(OLEDs). We investigate the inorganic composite film based on MgO and $SiO_2$ to protect from the moisture and oxygen. The inorganic composite films are added the base materials to the co-operate materials using the mixed process and it is deposited on plastic substrate by e-beam evaporator. In order to analyze as kinds of inorganic materials, Water Vapor method of Transmission Rate (WVTR) and Oxygen Transmission Rate (OTR) are measured by Permatran equipment(MOCON Corp.). For comparison. an MgD- and $SiO_2$-based composite film has lower values of WVTR and OTR than inorganic composite/compound films of ones. The results obtained here shows that this film is suitable for passivation layer to extend the life-time of OLEDs.