• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.507-512
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• 2005

When carbon electrode is used as an anode in Li ion battery, passivation film forms on the electrode surface during the initial charge process due to so called Solid-Electrolyte Interphase (SEI). The passivation film formed by solvent decomposition during the initial charge process affects charge/discharge capacity. In this paper, 1 M $LiPF_6,EC:DEC$ (1 : 1, volume ratio) electrolyte with $Li_2CO_3$, at various temperatures, the electrochemical characteristics of passivation film formed on Kawasaki Mesophase Fine Carbon electrode surface were investigated by using chronopotentiometry, cyclic voltammetry, and impedance spectroscopy. Experimental observations indicated that as solvent decomposition occurred, the decomposition voltage was strongly dependent on ionic conductivity, which was low in the process at low temperature. The impedance of passivation film formed during the initial charge process, were dependent on the temperature.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.45-49
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• 2008

The cyclic polarisation technique was applied to determine the corrosion, primary-passivation, transpassive, and protection potential of AISI 316L stainless steels immersed in 3550-ppm NaCl solution containing sulfate in the content up to 3000 ppm. The solutions were kept constant at $27^{\circ}C$ and saturated by laboratory air. The solution pH was varied from 3 to 11. Each type of potentials was plotted in function of pH and linked as lines to determine the different zones in the constructed potential-pH diagram. The predominant regimes of the immunity, general corrosion, perfect passivation, imperfect passivation, and pitting corrosion were determined based on those lines of potentials. Comparing to the potential-pH diagram of specimens immersed in the aerated and deaerated 3550-ppm NaCl solutions, the addition of 3000-ppm $Na_2SO_4$ to these solutions increased the overall, perfect and imperfect, passivation regime by shifting the transpassive-potential line to the noble direction. However, it also widened the imperfect passivation area. The addition of $Na_2SO_4$ did not significantly affect the corrosion potential. It was found that the dissolved oxygen tends to negatively shift the transpassive-potential and protection-potential lines at all studied pH. The considerable effect of dissolved oxygen on corrosion and primary-passivation potentials could not be observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.195-200
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• 2005

For the longevity of OLEDs, passivation of OLEDs is an important process step since organic materials used in OLEDs are very vulnerable to moisture. In this work, the passivation effect of the plasma polymerized para-xylene (PP$\rho$X) layers was studied. The PPpX layers deposited by PECVD were formed on top of the cathode with various plasma powers of 50 - 90 W. Passivation effect of PP$\rho$X was significantly dependent upon the deposition plasma power of the PP$\rho$X film. The lifetime of OLEDs with the 70 W deposited PP$\rho$X passivation layer was about 5 times longer than that of the control device.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.218.2-218
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.217.2-217
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.189-189
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• 2002

• Journal of the Microelectronics and Packaging Society
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• v.23 no.1
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• pp.11-15
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• 2016

The organic light emitting diodes (OLEDs) have been studied as large flexible displays, light source and hard wares of internet of things. However, OLEDs show some drawbacks in terms of external environments due to the low work function of the metals and the reactive organic materials. In particular, the operation functions of the OLEDs tend to deteriorate rapidly by exposing the oxygen and moisture. So as to prevent it, domestic and overseas studies underway in various method such as ALD, PVD, CVD. But it has complex process and high cost. Therefore In order to protect devices from the external environments, it is important to develop the passivation thin films of low-cost and simple process which can prevent the devices from the penetration of the oxygen and moistures. In this study, to improve the reliability, passivation thin films were coated onto the green OLEDs by spin coating method and investigated the changes of the optical properties of the prepared devices at various doping concentrations of sodium alginate (SA). The passivation solutions were synthesized by using polyvinyl alcohol (PVA) host material with a dopant of SA which were added with the amounts of 10, 20 and 40 wt% into the PVA. As a result, the best barrier properties of the OLEDs were obtained for the samples with 40 wt% SA. Finally, the passivation films can be optimized by using the mixture solution of PVA and SA materials.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of Information Display
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• v.11 no.1
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• pp.8-11
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• 2010

In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.