• 공업화학
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• 제16권4호
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• pp.507-512
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• 2005

리튬 이온 2차 전지의 부극으로 사용되는 탄소전극은 초기 충전시 전극 표면에 Solid Electrolyte Interphase (SEI)라고 불리는 부동태 피막을 형성한다. 초기 충전과정에서의 용매분해로 형성된 막은 충방전 용량에 큰 영향을 주는 것으로 조사되었다. 본 연구에서는 Kawasaki Mesophase Fine Carbon 부극과 1 M $LiPF_6,EC:DEC$ (1:1, 부피비)에 $Li_2CO_3$를 첨가하여 전극/전해질 계면에서 초기충전 온도에 따라 형성되는 부동태 피막의 전기화학적 특성을 시간대 전압법, 순환 전압-전류법, 임피던스법을 이용하여 조사하였다. 관찰된 결과에 따르면, 용매분해 반응이 일어날 때 리튬 이온의 전도도에 따라 용매분해 전위가 달라졌으며, 저온으로 갈수록 $Li^+$ 이온의 전도성이 떨어져 분해 전위 차이가 나타남을 알았다. 또한 여러 온도조건에서 초기 충전시 형성된 피막의 저항은 온도별로 달라짐을 확인하였다.

• Corrosion Science and Technology
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• 제7권1호
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• pp.45-49
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• 2008

The cyclic polarisation technique was applied to determine the corrosion, primary-passivation, transpassive, and protection potential of AISI 316L stainless steels immersed in 3550-ppm NaCl solution containing sulfate in the content up to 3000 ppm. The solutions were kept constant at $27^{\circ}C$ and saturated by laboratory air. The solution pH was varied from 3 to 11. Each type of potentials was plotted in function of pH and linked as lines to determine the different zones in the constructed potential-pH diagram. The predominant regimes of the immunity, general corrosion, perfect passivation, imperfect passivation, and pitting corrosion were determined based on those lines of potentials. Comparing to the potential-pH diagram of specimens immersed in the aerated and deaerated 3550-ppm NaCl solutions, the addition of 3000-ppm $Na_2SO_4$ to these solutions increased the overall, perfect and imperfect, passivation regime by shifting the transpassive-potential line to the noble direction. However, it also widened the imperfect passivation area. The addition of $Na_2SO_4$ did not significantly affect the corrosion potential. It was found that the dissolved oxygen tends to negatively shift the transpassive-potential and protection-potential lines at all studied pH. The considerable effect of dissolved oxygen on corrosion and primary-passivation potentials could not be observed.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• 한국진공학회지
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• 제14권4호
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• pp.195-200
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• 2005

For the longevity of OLEDs, passivation of OLEDs is an important process step since organic materials used in OLEDs are very vulnerable to moisture. In this work, the passivation effect of the plasma polymerized para-xylene (PP$\rho$X) layers was studied. The PPpX layers deposited by PECVD were formed on top of the cathode with various plasma powers of 50 - 90 W. Passivation effect of PP$\rho$X was significantly dependent upon the deposition plasma power of the PP$\rho$X film. The lifetime of OLEDs with the 70 W deposited PP$\rho$X passivation layer was about 5 times longer than that of the control device.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.218.2-218
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• 2003

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.217.2-217
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.189-189
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• 2002

• 마이크로전자및패키징학회지
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• 제23권1호
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• pp.11-15
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• 2016

유기발광다이오드(orgianic light emitting diodes, OLEDs)는 대형 유연 디스플레이와 발광원으로서 사물인터넷 (IoT)의 하드웨어 기기 등 다양한 분야에서 연구가 진행되고 있다. 그러나 낮은 일함수의 금속 및 쉽게 반응하는 유기재료 자체의 특성으로 인하여 외부환경에 매우 취약한 단점을 가지고 있으며 특히, 수분과 산소에 민감하여 외부와의 접촉 시 성능이 급속도로 저하되는 현상을 나타내게 된다. 이를 방지하기 위해 PVD, CVD, ALD 와 같은 방법으로 보호막 형성 연구를 진행 중에 있지만 복잡한 공정 및 높은 비용의 문제점 등이 있다. 그러므로 외부 환경에 의한 성능 저하를 차단해주는 저렴하고 단순한 공정의 페시베이션(passivation) 박막 기술 개발이 매우 중요하다. 본 연구에서는 유기발광다이오드의 수명 향상을 위하여 스핀코팅(spin-coating) 방법으로 녹색 유기발광다이오드 소자 위에 조성비에 따른 페시베이션 박막을 형성한 후 녹색 유기발광다이오드의 휘도특성 변화를 조사하였다. 페시베이션 용액은 poly vinyl alcohol (PVA)를 기반으로 sodium alginate (SA)를 0, 10, 20, 40 wt%의 조성비로 제조하였으며, 40 wt%의 조성비에서 가장 좋은 배리어 보호 특성을 나타내었다. 최종적으로 PVA + SA 용액의 최적화된 페시베이션 보호막을 제작할 수 있었다.

• 한국재료학회지
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• 제20권4호
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of Information Display
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• 제11권1호
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• pp.8-11
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• 2010

In this study, a new thin films passivation technique using Zn with high electronegativity and $MgF_2$, a fluorine material with better optical transmittance than the sealing film materials that have thus far been reported was proposed. Targets with various ratios of $MgF_2$ to Zn (5:5, 4:6 and 3:7) were fabricated to control the amount of Zn in the passivation films. The Mg-Zn-F films were deposited onto the substrates and Zn was located in the gap between the lattices of $MgF_2$ without chemical metathesis in the Mg-Zn-F films. The thickness and optical transmittance of the deposited passivation films were approximately 200 nm and 80%, respectively. It was confirmed via electron dispersive spectroscopy (EDS) analysis that the Zn content of the film that was sputtered using a 4:6 ratio target was 9.84 wt%. The Zn contents of the films made from the 5:5 and 3:7 ratio targets were 2.07 and 5.01 wt%, respectively. The water vapor transmission rate (WVTR) was determined to be $38^{\circ}C$, RH 90-100%. The WVTR of the Mg-Zn-F film that was deposited with a 4:6 ratio target nearly reached the limit of the equipment, $1\times10^{-3}\;gm^2{\cdot}day$. As the Zn portion increased, the packing density also increased, and it was found that the passivation films effectively prevented the permeation by either oxygen or water vapor. To measure the characteristics of gas barrier, the film was applied to the emitting device to evaluate their lifetime. The lifetime of the applied device with passivation was increased to 25 times that of the PLED device, which was non-passivated.