• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.233-233
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• 2012

나노입자가 가지는 고유한 특성이 부각되면서 이를 소자 특성 향상에 응용하고자 하는 연구가 집중적으로 이루어지고 있다. 박막에 포함된 나노입자는 메모리, 고효율 박막형 태양전지 등에 이용될 수 있는 가능성을 보여주었으며, 나노입자에 기반 하는 소자 제조에 관한 연구가 이루어지면서 플라즈마 내 발생하는 나노입자를 이용하여 패터닝 등에 적용하고자 하는 연구가 국내외에서 활발히 이루어지고 있다. 특히 플라즈마에서 발생하는 나노입자는 플라즈마 내 전기적 및 화학적 특징으로 인해 다른 입자 제조 공정과 달리 응집이 없는 균일한 입자를 제조할 수 있다. 이러한 플라즈마 내 발생 입자를 응용하기 위해서는 각각의 응용 분야에 적합한 입경 분포 제어가 요구된다. 하지만 입자 합성 시 크기분포 특성에 관한 연구는 기존의 포집 및 전자현미경을 이용한 방법으로 실시간으로 분석하기에는 한계가 있다. 따라서 본 연구에서는 저압에서 실시간으로 나노입자 분포를 측정할 수 있는 PBMS (particle beam mass spectrometer)를 이용하여, PECVD (plasma enhanced chemical vapor deposition)의 입자 생성 조건에 따라 continuous, pulse, dual pulse로 분류되는 공정 조건에서 생성되는 입자의 크기 분포를 측정하였다. 또한 그 결과를 기존의 동일한 조건에서 포집 후 SMPS (scanning mobility particle sizer)와 전자 현미경을 이용하여 분석한 결과와 비교하였다. 실리콘 나노 입자의 측정은 PBMS 장비의 전단 부분을 PECVD 장치 내부에 연결하여 진행하였다. PECVD를 이용한 실리콘 나노입자 형성의 주요 변수는 RF pulse, 가스(Ar, SiH4, H2)의 유량, Plasma power, 공정 압력 등이 있으며 각 변수를 조절하여 공정 환경을 구성하였다. 결론적으로 본 연구를 통하여 PECVD를 이용해 각각의 공정 환경에서 생성되는 실리콘 나노입자의 실시간 입경 분포 분석을 PBMS로 수행하는 것에 신뢰성이 있음을 알 수 있었으며, 그 경향을 확인할 수 있었다. 추후 지속적 연구에 의해 변수에 따른 나노입자 생성을 데이터베이스화 하여 요구되는 응용분야에 적합한 특성을 가지는 나노입자를 형성하는 조건을 정립 하는데 중요한 역할을 할 것을 기대할 수 있다.

• Textile Coloration and Finishing
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• v.26 no.2
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• pp.99-105
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• 2014

In this study, $TiO_2$ and Ag powders were deposited on the PET fabric using an atomizer in order to study the characteristics of particle deposited fabric. To improve the particle deposition, the surface of the fabric was pre-treated with an electron beam and its effect was studied with the deposition of those elements on the fabric. The SEM was used to observe the morphology of the deposition fabric and through the EDS analysis, the deposition of $TiO_2$ and Ag was confirmed. Also, the absorbance of the particle deposited fabric was measured using the Methylene Blue to verify the photolysis nature of $TiO_2$. Moreover, the antibiotic nature of Ag on the surface of the PET fabric was identified through the antibiosis test.

• Korean Journal of Remote Sensing
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• v.15 no.4
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• pp.289-295
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• 1999

Space Physics Sensor (SPS) on-board the KOMPSAT-1 consists of the High Energy Particle Detector (HEPD) and the Ionospheric Measurement Sensor (IMS). The HEPD is to characterize the low altitude high energy particle environment and the effects on the microelectronics due to these high energy particles. It is composed of four sensors: Proton and Electron Spectrometer(PES), Linear Energy Transfer Spectrometer (LET), Total Dose Monitor (TDM), and Single Event Monitor (SEM). 35 MeV proton beam from the medical KCCH cyclotron, at Korea Cancer Center Hospital in Seoul, is used to calibrate the PES. Primary proton beam of 35MeV scattered by polypropylene target is converted to various energy protons according to the elastic collision kinematics. In this calibration, the threshold level of the proton in the PES can be determined and the energy ranges of PES channels are also calibrated.

• Structural Engineering and Mechanics
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• v.52 no.2
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• pp.307-322
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• 2014

A two-step procedure to detect and quantify damages in structures from changes in curvature mode shapes is presented here. In the first step the maximum difference in curvature mode shapes of the undamaged and damaged structure are used for visual identification of the damaged internal-substructure. In the next step, the identified substructures are searched using unified particle swarm optimization technique for exact identification of damage location and amount. Efficiency of the developed procedure is demonstrated using beam like structures. This methodology may be extended for identifying damages in general frame structures.

• Particle and aerosol research
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• v.14 no.1
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• pp.1-8
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• 2018

The optical force on a perfectly reflecting sphere in a ray-optics regime is considered. With the assumption of geometric optics and a sphere smaller than the minimum waist of the illuminating beam, closed-form analytic expressions of the optical force are derived. Both axial and radial forces are expressed by a modified Bessel function of the first kind. The derived analytic expressions are compared to precise numerical computations of the exact optical force equations derived previously. In addition the error due to the small sphere assumption is estimated analytically.

• Proceedings of the Korean Nuclear Society Conference
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• 1996.11a
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• pp.254-259
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• 1996

Phase Doppler particle analyze. (PDPA) is a instrument which can be used to obtain simultaneous size and velocity measurements in a multiphase flow. In this study, the size of the water droplets entrained from a bubbling surface of a stagnant liquid column is measured by PDPA with a specially designed transmitter of long focal length and large beam diameter. The test section tube is made of acryle with 18 mm I.D. and 900 mm length. The experimental data are obtained for the air superficial velocity between 0.7 m/s to 3.4 m/s at atmospheric pressure. The experimental results show that there exists large difference in the entrainment mechanism between the churn-turbulent flow and annular flow. Through the present study, the phase Doppler analyzer system is shown to be successfully applied to measure particle sizes larger than $2,000\mu\textrm{m}$ if a transmitter of long focal length is utilized.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.9
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• pp.1351-1358
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• 2017

In this work, we investigated radiation hardness of GaN-based transistors which are strong candidates for next-generation power electronics. Field effect transistors with three types of gate structures including metal Schottky gate, recessed gate, and p-AlGaN layer gate were fabricated on AlGaN/GaN heterostructure on Si substrate. The devices were irradiated with energetic protons and alpha-particles. The irradiated transistors exhibited the reduction of on-current and the shift of threshold voltage which were attributed to displacement damage by incident energetic particles at high fluence. However, FET operation was still maintained and leakage characteristics were not degraded, suggesting that GaN-based FETs possess high potential for radiation-hardened electronics.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Proceedings of the KIEE Conference
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• 1992.07a
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• pp.437-440
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• 1992

We design a multi-element photo-detector to measure the size of particles using the diffracted light energy distribution. The light energy that is scattered by particles in the collimated laser beam is collected by the Fourier transform lens and directed to the multi-semicircular concentric annular detecters. The scattered profile measured by the photodetector is sampled by a 32 channel analog-to-digital converter. A nonnegative least squares analysis translates the light energy distribution into the corresponding unique particle size distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.206.2-206.2
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• 2014

Recently, particle induced X-ray emission (PIXE) analysis system was installed at the 2MV ion acceleration system in Korea institute science and technology (KIST). This installation is for complement to low atomic resolution of heavy atoms at Rutherford backscattering spectrometry (RBS) system. For quantitative analysis, a mass calibration of the PIXE set-up has been done with thin film standards and. The GUPIX software package has been used to process the PIXE spectra and the results are compared with the values from RBS system. Therefore, the instrumental constant H (solid angle and correction factor) is determined relying completely on the GUPIX data base (cross-sections, fluorescence and Coster-Kronig probabilities, stopping powers and attenuation coefficients) for a large set of elements. These H values can be used in future analysis.