• 한국산업융합학회 논문집
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• 제24권6_2호
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• pp.909-917
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• 2021

This study was carried out experimentally on the production and properties of silicon nanopowders characteristics using a transferred type arc plasma apparatus. To investigate the properties of silicon nanopowder, the purity of argon gas(99.999%, 99.9%) and the partial pressure ratio of nitrogen gas(0~90%) were varied. The total pressure in chamber is 400Torr and the silicon chunk amount used as raw material is 300g. The power supplied to the cathode to generate arc plasma was 9~12kW/h, and the electrode was made of tungsten and graphite with a diameter of 13mm. The particle size, impurity elements and powder evaporation rate of the silicon powder were analyzed using the XRD, FE-SEM, TEM and electronic scale. According to the purity of argon gas, the silicon evaporation rate and the particle size were similar, and impurities were generated more in the case of 99.9% purity than 99.999%. When argon gas and nitrogen gas were mixed in the chamber, the silicon evaporation rate and particle size increased as the partial pressure ratio of nitrogen gas increased. In particular, when the partial pressure ratio of nitrogen gas was 80%, the silicon evaporation rate 80g/h, and the particle size was about 80~100nm.

• 한국표면공학회지
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• 제27권3호
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• pp.143-148
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• 1994

Effects of process variables of HCD ion plating on the film composition of Ti(C, N) were analyzed. The mole ratio of carbon to nitrogen and that of non-metal to titanium in the film primarily depend on the partial pressure ratio of ($C-2H_2$/ $N_2$) and total reactive gas pressure, respectively. The amount of nonmetallic com-ponents increases in nonlinear fashion as the total gas pressure due to the different reactivity of $C-2H_2$ and $N_2$ gases with Ti. The nonmetallic components was saturated dwith nitrogen when the nitrogen gas was more than 60% of total reactive gas. These two process variables could be related systematically using the concept of effective pressure in which the difference of reactivity of each gas was normalized.

• 센서학회지
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• 제9권3호
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• pp.248-255
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• 2000

타겟을 상하 2개 설치한 페닝소스 스퍼터링 장치를 구현하였다. 이 시스템을 이용하여 결정성 질화탄소막을 성장하고 그 물리적 특성을 조사하였다. RBS 측정을 통해 스퍼터링가스 중 Ar의 비율을 감소시키고 질소의 비율을 증가시키면 철의 스퍼터링이 감소되는 것을 알 수 있었다. 성장된 질화탄소막의 결정립 크기는 약 $150{\AA}$에서 $250{\AA}$의 분포를 이루고 있었다. 스퍼터링가스 중 질소의 분압이 증가할수록 증착율 및 성장된 질화탄소막 중 질소량은 증가하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제23권2호
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• pp.1-5
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• 2021

We have investigated the electrical transport properties of polycrystalline tantalum nitride (TaN_x) films. Various compositions of tantalum (nitride) thin films have been deposited on SiO₂ substrates by reactive DC magnetron sputtering while changing the ratio of nitrogen partial pressure. The substrate temperature was maintained at 283 K during deposition. X-ray diffraction analyses indicated the presence of α-Ta and β-Ta phases in the Ta film deposited in pure argon atmosphere, while fcc-TaN_x phases appeared in the sputtering gas mixture of argon and nitrogen. The N/Ta atomic ratio in the film increased ranging from 0.36 to 1.07 for nitrogen partial pressure from 7 to 20.7%. The superconducting transition temperatures of the TaN_x thin films were measured to be greater than 3.86 K with a maximum of 5.34 K. The electrical resistivity of TaN_x thin film was in the range of 177-577 𝜇Ωcm and increased with an increase in nitrogen content. The upper critical filed at zero temperature for a TaN_0.87 thin film was estimated to exceed 11.3 T, while it showed the lowest T_c = 3.86 K among the measured superconducting TaN_x thin films. We try to explain the behavior of the increase of the residual resistivity and the upper critical field for TaN_x thin films with the nitrogen content by using the combined role of the intergrain Coulomb effect and disorder effect by grain boundaries.

• The Korean Journal of Ceramics
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• 제4권4호
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• pp.387-393
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• 1998

The formation of titanium diboride ($TiB_2$ ) via the reduction of $TiO_2$ with boric oxide and carbon was studied in a partially reducing atmosphere of argon mixed with 4 vol.%H2. The effect of reaction time, temperature, partial pressure of nitrogen and $TiO_2/B_2_O3$ stoichiometric ratio on the reducibility of oxides has been studied. The phases formed were analysed by using X-ray rowder diffraction and scanning sosctron microscopic techniques. In this paper, we also investigated the presence of $CaC_2$ as a reducing agent on the reducibility of oxide mixtures and on the Ti-B-C-Ca-O phase equilibria. The morphology of $TiB_2$ formed in the presence of $CaC_2$ is compared with the microstructure of $TiB_2$ formed as a consequence of carbothermic reduction. The observed variation in $TiB_2$ crystals formed is also explained.

• 공업화학
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• 제16권1호
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• pp.123-130
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• 2005

산소 PSA용 흡착제의 제조를 위하여 표면적이 큰 제올라이트 X형 흡착제를 합성하고 양이온교환을 통하여 질소의 선택적 흡착 능력이 우수한 흡착제로 제조하였다. 제올라이트 X형 흡착제는 50 L급 대형 반응기에서 $SiO_2\;:\;Na_2O\;:\;H_2O\;:\;Al_2O_3$ = 2.5 : 3.5 : 150 : 1의 조성으로 $98^{\circ}C$, 18 h 동안 반응한 결과 표면적이 $650m^2/g$ 이상의 표면적을 나타내었다. 흡착제의 양이온교환은 Li, Ag, Ca, Br, Sr 등의 금속 이온을 대상으로 조사하였다. Ag 이온의 이온교환 속도가 가장 빠르게 일어났으며 모든 금속 이온이 제올라이트 X형에 포함된 Na 이온과 거의 당량적으로 이온 교환이 일어남을 알 수 있었다. 양이온 교환된 제올라이트 X형 흡착제의 질소와 산소의 흡착 성능을 $10{\sim}40^{\circ}C$, 0~9 atm의 범위에서 측정한 결과 이온교환을 하지 않은 NaX 흡착제에 비하여 월등히 높은 흡착 성능을 나타내었으며 이온 교환된 제올라이트 X형 흡착제의 질소 흡착량은 0.5 atm 이하의 저압에서는 Ag > Li > Ca > Sr > Ba > K 이온의 순으로 나타났으나 1 atm 이상의 고압에서는 Li > Ag > Ca > Sr > Ba > K 이온의 순으로 나타났다. 공기의 조성에 준하는 질소 및 산소의 분압에서 흡착량의 비를 조사하여 질소/산소 분리도를 측정한 결과 $20^{\circ}C$의 온도에서 Li으로 이온 교환된 흡착제의 분리도는 13.023을 나타내었다.

• 멤브레인
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• 제16권3호
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• pp.204-212
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• 2006

이산화탄소에 대한 가소화 안정성 및 이산화탄소/질소의 분리특성이 탁월한 폴리이서술폰(PES)중공사 분리막에 의한 이산화탄소 분리특성을 수치해석으로 알아보고자 하였다. 공정변수에 따른 이산화탄소 분리 거동을 예측하기 위하여 공급 기체와 투과기체가 같은 방향으로 흐르는 병류 흐름에 대한 분리막 공정 지배 방정식을 5차 Runge-Kutta-Verner 방법을 사용하여 Compaq Visual Fortran 6.6 소프트웨어를 이용 공정모사 프로그램을 개발하였다. 개발된 프로그램을 사용하여 수치해석을 수행한 결과, 이산화탄소 투과특성에 영향을 주는 가장 중요한 인자로서 공급 이산화탄소 분압, 투과측과 분리막 내부의 압력비 그리고 공급 기체가 분리막 내부에 머무르는 체류 시간임을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.78-78
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• 2013

Recently, many platinoid metals like platinum and ruthenium have been used as an electrode of microelectronic devices because of their low resistivity and high work-function. However the material cost of Ru is very expensive and it usually takes long initial nucleation time on SiO2 during chemical deposition. Therefore many researchers have focused on how to enhance the initial growth rate on SiO2 surface. There are two methods to deposit Ru film with atomic layer deposition (ALD); the one is thermal ALD using dilute oxygen gas as a reactant, and the other is plasma enhanced ALD (PEALD) using NH3 plasma as a reactant. Generally, the film roughness of Ru film deposited by PEALD is smoother than that deposited by thermal ALD. However, the plasma is not favorable in the application of high aspect ratio structure. In this study, we used a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a metal organic precursor for both thermal and plasma enhanced ALDs. In order to reduce initial nucleation time, we use several methods such as Ar plasma pre-treatment for PEALD and usage of sacrificial RuO2 under layer for thermal ALD. In case of PEALD, some of surface hydroxyls were removed from SiO2 substrate during the Ar plasma treatment. And relatively high surface nitrogen concentration after first NH3 plasma exposure step in ALD process was observed with in-situ Auger electron spectroscopy (AES). This means that surface amine filled the hydroxyl removed sites by the NH3 plasma. Surface amine played a role as a reduction site but not a nucleation site. Therefore, the precursor reduction was enhanced but the adhesion property was degraded. In case of thermal ALD, a Ru film was deposited from Ru precursors on the surface of RuO2 and the RuO2 film was reduced from RuO2/SiO2 interface to Ru during the deposition. The reduction process was controlled by oxygen partial pressure in ambient. Under high oxygen partial pressure, RuO2 was deposited on RuO2/SiO2, and under medium oxygen partial pressure, RuO2 was partially reduced and oxygen concentration in RuO2 film was decreased. Under low oxygen partial pressure, finally RuO2 was disappeared and about 3% of oxygen was remained. Usually rough surface was observed with longer initial nucleation time. However, the Ru deposited with reduction of RuO2 exhibits smooth surface and was deposited quickly because the sacrificial RuO2 has no initial nucleation time on SiO2 and played a role as a buffer layer between Ru and SiO2.