• Journal of Power Electronics
• /
• v.18 no.4
• /
• pp.1255-1267
• /
• 2018

Parasitic parameters have a larger influence on Silicon Carbide (SiC) devices with an increase of the switching frequency. This limits full utilization of the performance advantages of the low switching losses in high frequency applications. By combining a theoretical analysis with a experimental parametric study, a mathematic model considering the parasitic inductance and parasitic capacitance is developed for the basic switching circuit of a SiC MOSFET. The main factors affecting the switching characteristics are explored. Moreover, a fast-switching double pulse test platform is built to measure the individual influences of each parasitic parameters on the switching characteristics. In addition, guidelines are revealed through experimental results. Due to the limits of the practical layout in the high-speed switching circuits of SiC devices, the matching relations are developed and an optimized layout design method for the parasitic inductance is proposed under a constant length of the switching loop. The design criteria are concluded based on the impact of the parasitic parameters. This provides guidelines for layout design considerations of SiC-based high-speed switching circuits.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.11 no.6
• /
• pp.876-885
• /
• 2000

A new and simple method is presented for determining the parasitic resistances of MESFET and HEMT from the measured S-parameters under normal active bias without depending on additional DC measurements or iteration or optimization process. The presented method is based on the fact that the difference between source resistance(Rs) and drain resistance(Rd) can be obtained from the measured Z-parameters under zero bias condition. It is possible to define the new internal device including intrinsic device and 3 parasitic resistances by elimination the parasitic inductances and capacitances from the measured S-parameters. Three parasitic resistances are calculated easily from the fact that the real parts of Yint,11 and Yint,12 of intrinsic Y-parameters are zero theoretically and the relations between S-,Z-, Y-matrices. The calculated parasitic resistances using the presented method and successively calculated equivalent circuit parameters give modeled S-parameters which are in good agreement with the measured S-parameters up to 400Hz.

• Proceedings of the Optical Society of Korea Conference
• /
• 2007.07a
• /
• pp.289-290
• /
• 2007

We have theoretically derived a electrical model and extracted a parasitic parameters of leakage current in InGaN/GaN light emitting diodes (LEDs). The parasitic parameters of our LED are $R_p=10^{10}{\Omega}$, $I_{0,2}=10^{-17}A$ and $n_2=3.6$, which provide information of leakage current.

• Proceedings of the KIEE Conference
• /
• 1988.07a
• /
• pp.433-434
• /
• 1988

Rectangular microstrip antenna with parasitic element is analyzed. Radiation admittance and equivalent circuit parameters between rectangular microstrip antenna and parasitic element are obtained by using equivalent ${\pi}$-network parameters of the slit in the wall of the parallel plate waveguide filled with homogeneous dielectric. The return loss is calculated and measured as a function of frequency with gap width 0.5mm between the patch and parasitic element. The experimental results are in fairly agreement with calculated values.

• Proceedings of the KIEE Conference
• /
• 2005.04a
• /
• pp.55-57
• /
• 2005

This paper deals with the analysis of bearing current in H-bridge seven level multilevel inverter fed induction motor. In the previous researches utilized electromagnetic equations to derive the parasitic capacitance or measured capacitance parameters, but we used FEM to derive parasitic capacitances and defined the equivalent circuit parameters in our strategy. Then we compared suggested method with conventional method in 60 [Hz] no load condition.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.671-674
• /
• 2005

The series parasitic resistances ($R_s$, $R_g$, $R_d$, $R_{sub}$) of BSIM3v3 RF MOSFET macro model were directly extracted from measured S-parameters in the GHz region by using simple 2-port parameter equations. Also, overlap capacitance and junction capacitance parameters were extracted by tuning $S_{11}$, $S_{12}$, and $S_{22}$ respectively while DC-parameters and all parasitic resistances are fixed at previously extracted values. These data are verified to be accurate by observing good correspondence between modeled and measured S-parameters up to 10GHz.

• Journal of Power Electronics
• /
• v.18 no.3
• /
• pp.902-909
• /
• 2018

This study investigates the influences of different core parameters on the dynamic performances, such as rise time and overshoot, in pulse transformers for the triggering circuit of SCRs. First, a simplified transformer equivalent circuit, which emerges from a standard transformer equivalent circuit, is developed to analyze the step response. Second, the relations between the dynamic performances and the parasitic parameters are calculated by the simplified equivalent circuit. Third, the variations of rise time and overshoot, which are vital to the stability of triggering SCRs, with different core parameters, such as mechanic dimensions and topologies, are comprehensively investigated by analyzing the parasitic parameters. Finally, prototype transformers are fabricated to experimentally validate the analysis. The presented method can practically instruct the design of a pulse transformer for triggering SCRs.

• Journal of international Conference on Electrical Machines and Systems
• /
• v.3 no.3
• /
• pp.339-353
• /
• 2014

A straightforward method for optimal determining of a high frequency inductor's parasitic capacitance is presented. The proposed estimation method is based on measuring the inductor's impedance samples over a limited frequency range bordering on the resonance point considering k-dB deviation from the maximum impedance. An optimized solution to k could be obtained by minimizing the root mean squared error between the measured and the estimated impedance values. The model used to provide the estimations is a parallel RLC circuit valid at resonance frequency which will be transferred to the real model considering the mentioned interval of frequencies. A straightforward algorithm is suggested and programmed using MATLAB which does not require a wide knowledge of design parameters and could be implemented using a spectrum analyzer. The inputs are the measured impedance samples as a function of frequency along with the diameter of the conductors. The suggested algorithm practically provides the estimated parameters of a real inductance model at different frequencies, with or without design information. The suggested work is different from designing a high frequency inductor; it is rather concentration of determining the parameters of an available real inductor that could be easily done by a recipe provided to a technician.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.2
• /
• pp.1-10
• /
• 1999

Direct extraction of FET's small signal model parameters needs predetermined parasitic elements usually obtained under forward cold FET conditionl This paper derives analytic intrinsic model for cold FET's and shows that normal cold FET condition can replace forward cold FET condition for extracting parasitic elements. Then, we track the error of hot FET's small signal model bounded by the cold FET condition and examine the validness of cold parasitic resistances by checking the existence of the error minimum.

• Journal of electromagnetic engineering and science
• /
• v.4 no.1
• /
• pp.8-12
• /
• 2004

In this paper, a triple-band printed dipole antenna using parasitic elements is proposed for the multiple wireless services. The proposed antenna is designed and experimentally analyzed at the bands of PCS, IMT-2000, and ISM services. To achieve triple frequency operation, the proposed antenna contains two parasitic elements, which act as additional resonators by coupling from the driving dipole antenna. From the measured results, the resonant frequencies of this antenna are 1.79 ㎓, 2.03 ㎓, and 2.41 ㎓ and the measured impedance bandwidths are 90 MHz(1760∼1850 MHz), 210 MHz(1,930∼2,130 MHz), and 30 MHz(2,400∼2,430 MHz) for VSWR<2. The measured antenna gains are 2.14 ㏈i, 0.9 ㏈i, and 0.5 ㏈i, respectively. Antenna parameters for trifle-band operation are investigated and several antenna characteristics are discussed.