• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.347-349
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• 2013

This paper describes analysis and calculation of line frequency ripple current according to output capacitor value and effects of LED connection in the single stage flyback converter with high power factor. The low frequency output ripple current delivered from single stage converter has been analyzed in detail and the method evaluating parasitic resistance included in LED has been provided. In order to verify the equation derived in this paper, the single stage flyback converter has been designed with constant output current regulation with DCM operation. Experiments were conducted with different LED load structures to analyze the effect of LED parasitic resistance on output ripple current. As test results, the calculation can provide guide line to select capacitor values depending on output ripple current and LED characteristics.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.165-168
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• 2002

Accurate circuit simulation models for embedded RF passive components in LTCC provide a way to efficiently design high performance RF modules. Particularly, consideration of unavoidable parasitic components is required certainly. In this study, the parasitic components which is appeared from 3-D structure is considered.

• Journal of Power Electronics
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• v.15 no.4
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• pp.1035-1046
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• 2015

This study presents a practical implementation of a multi-mode two-phase interleaved boost converter for fuel cell electric vehicle application. The main operating modes, which include two continuous conducting modes and four discontinuous conducting modes, are discussed. The boundaries and transitions among these modes are analyzed with consideration of the inductor parasitic resistance. The safe operational area is analyzed through a comparison of the different operating modes. The output voltage and power characteristics with open-loop or closed-loop operation are also discussed. Key performance parameters, including the DC voltage gain, input ripple current, output ripple voltage, and switch stresses, are presented and supported by simulation and experimental results.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.701-708
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• 1998

This paper presents a novel non-resonant PWM DC-DC converter for X-ray high-voltage power generator using the parasitic impedances of the high-voltage high-frequency link transformer with its output high-voltage control scheme and steady-state characteristics compared to the conventional series-parallel resonant DC-DC converter. The key point of this approach is to evaluate effectiveness of reduction of the turn ratio of the high-voltage high-frequency transformer on improvements in power conversion efficiency and the power factor applying a boost AC-DC converter as DC voltage source, especially in the long exposure term and light output load ranges.

• Animal Systematics, Evolution and Diversity
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• v.39 no.4
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• pp.169-175
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• 2023

A branchial parasitic bopyrid, Parabopyrella elongata (Shiino, 1949), is newly recorded in Korean fauna. Parabopyrella elongata differs from its congeners by the following characteristics: the head is smooth anteriorly in females; the pleon of females has distinct and wide lateral indentations on both sides; the pleotelson has a rounded distal end in females; oostegite 1 has a rounded posterolateral point; the pleon of males is single-segmented; and the uropod is absent in males. In this study, the detailed description and illustrations of the species are presented with an emended key to known Parabopyrella species in the Far East. The variations in P. elongata were also discussed. This is the first report of the genus Parabopyrella from South Korea.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.4 s.346
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• pp.44-51
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• 2006

In this paper, the resonance characteristics of zigzag wire dipole antennas are first analyzed by the method of moment(MOM) for shortening the space occupation length of straight wire dipole antenna Considering the shortening effect the integrated zigzag dipole antennas with the simplified microstrip feed are designed. Since the integration gives rise to discontinuities due to antenna line width with abrupt bend angles, the compensation by the chamfer is applied. Futhermore the integrated parasitic zigzag lines are properly attached to both sides of substrate for compensation of the effect of the dielectric substrate, hence improving the resonance characteristic. The design results at UHF and ISM band are verified with experiments.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.6
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.533-536
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• 1998

The electrical characteristics of NMOSFETs with asymmetrical source/drain regions have been expermentally investigated using test devices fabricated by $0.35\mu\textrm{m}$ CMOS technology. The performance degradation for asymmetric transistor and its causes are analyzed. The parasitic resistances, such as series resistance of active regions and silicide junction contact resistance, are distributed in parallel along the channel. Depending on source/drain geometry, the array of those resistances is changed, that results the various electrical properties.

• Parasites, Hosts and Diseases
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• v.59 no.1
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• pp.35-45
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• 2021

Adult echinostomes having 37 collar spines collected from the intestine of Pitalah ducks in Aceh Province, Indonesia in 2018 were morphologically and molecularly determined to be Echinostoma miyagawai Ishii, 1932 (Digenea: Echinostomatidae). Among 20 ducks examined, 7 (35.0%) were found to be infected with this echinostome, and the number of flukes collected was 48 in total with average 6.9 (1-17) worms per duck. The adult flukes were 7.2 (6.1-8.5) mm in length and 1.2 (1.0-1.4) mm in width (pre-ovarian or testicular level) and characterized by having a head collar armed with 37 collar spines (dorsal spines arranged in 2 alternating rows), including 5 end group spines, and variable morphology of the testes, irregularly or deeply lobed (3-5 lobes) at times with horizontal extension. The eggs within the worm uterus were 93 (79-105) ㎛ long and 62 (56-70) ㎛ wide. These morphological features were consistent with both E. miyagawai and Echinostoma robustum, for which synonymy to each other has been raised. Sequencing of 2 mitochondrial genes, cox1 and nad1, revealed high homology with E. miyagawai (98.6-100% for cox1 and 99.0-99.8% for nad1) and also with E. robustum (99.3-99.8% for nad1) deposited in GenBank. We accepted the synonymy between the 2 species and diagnosed our flukes as E. miyagawai (syn. E. robustum) with redescription of its morphology. Further studies are required to determine the biological characteristics of E. miyagawai in Aceh Province, Indonesia, including the intermediate host and larval stage information.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.436-440
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• 2021

The impact of the gate length (L_g) on the DC and high-frequency characteristics of indium-rich In_0.8Ga_0.2As channel high-electron mobility transistors (HEMTs) on a 3-inch InP substrate was inverstigated. HEMTs with a source-to-drain spacing (L_SD) of 0.8 ㎛ with different values of L_g ranging from 1 ㎛ to 19 nm were fabricated, and their DC and RF responses were measured and analyzed in detail. In addition, a T-shaped gate with a gate stem height as high as 200 nm was utilized to minimize the parasitic gate capacitance during device fabrication. The threshold voltage (V_T) roll-off behavior against L_g was observed clearly, and the maximum transconductance (g_{m_max}) improved as L_g scaled down to 19 nm. In particular, the device with an L_g of 19 nm with an L_SD of 0.8 mm exhibited an excellent combination of DC and RF characteristics, such as a g_{m_max} of 2.5 mS/㎛, On resistance (R_ON) of 261 Ω·㎛, current-gain cutoff frequency (f_T) of 738 GHz, and maximum oscillation frequency (f_max) of 492 GHz. The results indicate that the reduction of L_g to 19 nm improves the DC and RF characteristics of InGaAs HEMTs, and a possible increase in the parasitic capacitance component, associated with T-shap, remains negligible in the device architecture.