• Title/Summary/Keyword: Paper packaging

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Structure and Growth of Tin Whisker on Leadframe with Lead-free Solder Finish (무연솔더 도금된 리드프레임에서 Sn 위스커의 성장과 구조)

  • Kim Kyung-Seob;Leem Young-Min;Yu Chong-Hee
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.3 s.32
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    • pp.1-7
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    • 2004
  • Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

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Mechanical Reliability Evaluation on Solder Joint of CCB for Compact Advanced Satellite (Sherlock을 활용한 차세대 중형위성용 CCB 솔더 접합부의 기계적 신뢰성 평가)

  • Jeon, Young-Hyeon;Kim, Hyun-Soo;Lim, In-Ok;Kim, Youngsun;Oh, Hyun-Ung
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.45 no.6
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    • pp.498-507
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    • 2017
  • Electronic equipments comprised of high density components with various packaging types have been recently applied to a satellite. Therefore, to guarantee high reliability of electrical equipment, a design approach, which can reduce the development period and cost through an early diagnosis in potential risks of failure, should be established. In the previous research, the reliability assesment of the electronic equipments have based on Steinberg's fatigue failure theory. However, this theory was not enough for further investigation of life prediction and reliability of the electronic equipments comprised of various sizes and packaging types due to its theoretical limitations and analysis results sensitivity with regard to different modeling technic. In that case, if detailed finite element model is established, aforementioned problems can be readily solved. However, this approach might arise disadvantage of spending much time. In this paper, to establish strategy for high reliability design of electronic equipment, we performed mechanical reliability evaluation of CCB (Camera Controller Box) at qualification level based on the approach using Sherlock unlike design techniques applied to existing business.

Growth and Postharvest Freshness of $Tah$ $Tasai$ Chinese Cabbage ($Brassica$ $campestris$ var. $narinosa$) Baby Leaf Vegetable as Affected by Brushing Treatment during Cultivation (재배 시 brushing 처리에 따른 어린잎 채소 다채의 생육과 수확 후 선도 차이)

  • Lee, Jung-Soo;Do, Kyung-Ran
    • Food Science and Preservation
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    • v.19 no.1
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    • pp.19-25
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    • 2012
  • An experiment was conducted to find out the effect of brushing treatment during cultivation on the postharvest quality of the baby leaf vegetable, specifically tah tasai Chinese cabbage (Brassica campestris var. narinosa). The effect of mechanical brushing during cultivation on the postharvest quality was determined in terms of the quality changes in weight loss, gas partial pressure, leaf color, and appearance during storage using a 30-${\mu}m$-thick polypropylene film at $16^{\circ}C$. The brushing treatment included brushing with A4 paper back and forth 50 times a day. The study revealed that the growths on the brushing-treated plant group were less than those on the control group. The structure of the leaf tissue of the brushing-treated plant also tended to be less compact than that of the non-treated plant. The brushing treatment resulted in less growth and denser plant tissues as well as in differences in the gas $O_2$ consumption and $CO_2$ accumulation after packaging. For the gas partial pressure, the $O_2$ consumption and $CO_2$ accumulation of the brushing-treated plant tended to be less than those of the non-treated plant. There were no differences, however, between the brushing-treated plant and control groups in the SPAD value and appearance. The study results also suggested that after packaging, the effects of the brushing treatment during cultivation on the quality of the tah tasai Chinese cabbage baby leaf vegetable was not significant. As such, it is recommended that effective post-harvest methods of improving the product quality of the baby leaf vegetable be further investigated.

A Study on the Parameters of Design for Warpage reduction of Passive components Embedded Substrate for PoP (PoP용 패시브 소자 임베디드 기판의 warpage 감소를 위한 파라메타 설계에 관한 연구)

  • Cho, Seunghyun;Kim, Dohan;Oh, Youngjin;Lee, Jongtae;Cha, Sangsuk
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.1
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    • pp.75-81
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    • 2015
  • In this paper, numerical analysis by finite element method and parameter design by the Taguchi method were used to reduce warpage of a two passive components embedded double side substrate for PoP(Package on Package). The effect of thickness of circuit layers (L1, L2) and thickness of solder resist (SR_top, SR_BTM) were analyzed with 4 variations and 3 levels(minimum, average and maximum thickness) to find optimized thickness conditions. Also, paste effect of solder resist on unit area of top surface was analyzed. Finally, experiments was carried out to prove numerical analysis and the Taguchi method. Based on the numerical and experimental results, it was known that circuit layer in ball side of substrate was the most severe determining deviation for reducing warpage. Buried circuit layer in chip side, solder resist and were insignificant effects on warpage relatively. However, warpage decreased as circuit layer in ball side thickness increased but effect of solder resist and circuit layer in chip side thickness were conversely.

Assessment of Viscoplastic Deformation Behavior of Eutectic Solder and Lead-free Solder (유연 솔더와 무연 솔더의 점소성 변형거동 평가)

  • Lee, Bong-Hee;Joo, Jin-Won
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.2
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    • pp.17-27
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    • 2011
  • This paper describes an experimental study and finite element analysis (FEA) carried out for investigating thermal deformation behavior of solders, resulting from temperature change in the solder. With such a goal in mind, a shear specimen that was composed of two metal bars having different coefficient of thermal expansion and solder blocks placed between two bars was designed and fabricated. Two different types of solder blocks, eutectic solder (Sn/36Pb/ 2Ag) and lead-free solder (Sn/3.0Ag/0.5Cu) were tested as well. Fringe patterns for several temperature steps were recorded and analyzed for three temperature cycles using a real-time moir$\acute{e}$ setup. The experimental data was verified with FEA and used to evaluate the suitability for numerous solder constitutive models available in literatures. FEA employing Anand material model suggested by Darveaux et al. and Chang et al. were found to be in an excellent agreement with the experimental results for the eutectic solder and the lead-free solder, respectively. In addition, numerical predictions on bending displacement, shear strain and viscoplastic distortion energy are documented and viscoplastic deformation behavior of two types of solder material are compared.

Fabrication and Characterization of Organic Solar Cells with Gold Nanoparticles in PEDOT:PSS Hole Transport Layer (PEDOT:PSS 정공 수송층에 금 나노입자를 첨가한 유기태양전지의 제작 및 특성 연구)

  • Kim, Seung Ho;Choi, Jae Young;Chang, Ho Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.2
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    • pp.39-46
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    • 2013
  • In this paper, organic solar cells(OSCs) based on bulk-heterojunction structures were fabricated by spin coating method using polymer P3HT and fullerene PCBM as a photoactive layer. The fabricated OSCs had a simple glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structures. The photoactive layer of mixed P3HT:PCBM was formed with 1:1 weight ratio. The hole transport layer(HTL) was used conducting polymer PEDOT:PSS concentration with gold nanoparticles. The annealing temperature and concentration of nanoparticles in HTL were verified to improve the OSC characterization. The percentage of gold nanoparticles in HTL were 0.5 wt% and 1.0 wt%, and the surface morphology, electrical properties and absorption intensities were investigated. The devices were 0.5 wt%, and the highest 3.1% of the powder conversion efficiency(PCE), 10.2 $mA/cm^2$ of the maximum short circuit current density($J_{SC}$), 0.535V of the open circuit voltage($V_{OC}$) and 55.8% of the fill factor(F.F) could be obtained when the nanoparticle concertration was 0.5 wt%. The annealing temperature of HTL was $110^{\circ}C$, $130^{\circ}C$, $150^{\circ}C$ in vacuum oven and measured the absorption intensities, surface morphology, crystallinity and electrical properties were investigated. The best property was obtained in HTL annealed at $130^{\circ}C$ for gold nanoparticles of 0.5 wt%, showing that $J_{SC}$, $V_{OC}$, F.F and PCE were about 12.0 $mA/cm^2$, 0.525V, 64.2% and 4.0%, respectively.

Thick Film Gas Sensor Based on PCB by Using Nano Particles (나노 입자를 이용한 PCB 기반 후막 가스 센서)

  • Park, Sung-Ho;Lee, Chung-Il;Song, Soon-Ho;Kim, Yong-Jun
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.2 s.43
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    • pp.59-63
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    • 2007
  • This paper presented a low-cost thick film gas sensor module, which was based on simple PCB (Printed Circuit Board) process. The proposed sensor module included a $NO_2/H_2$ gas sensor, a relative humidity sensor, and a heating element. The $NO_2/H_2$ gas and relative humidity sensors were realized by screen-printing $SnO_2,\;BaTiO_3$ nano-powders on IDTS (Interdigital Transducer) of a PCB substrate, respectively. At first 1% $H_2$ gas flowed into the sensor chamber. After 4 min, air filled the chamber while $H_2$ gas flow stopped. This experiment was performed repeatedly. The Identical procedure was used for the $NO_2$ detection. The result for sensing $H_2$ gas showed the increase of voltage from 0.8V to 3.5V due to the conductance increase and its reaction response time by hydrogen flow was 65 sec. $NO_2$ sensing results showed 2.7 V voltage drop due to the conductance decrease and its response time was 3 sec through a voltage monitoring.

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Solderability of thin ENEPIG plating Layer for Fine Pitch Package application (미세피치 패키지 적용을 위한 thin ENEPIG 도금층의 솔더링 특성)

  • Back, Jong-Hoon;Lee, Byung-Suk;Yoo, Sehoon;Han, Deok-Gon;Jung, Seung-Boo;Yoon, Jeong-Won
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.1
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    • pp.83-90
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    • 2017
  • In this paper, we evaluated the solderability of thin electroless nickel-electroless palladium-immersion gold (ENEPIG) plating layer for fine-pitch package applications. Firstly, the wetting behavior, interfacial reactions, and mechanical reliability of a Sn-3.0Ag-0.5Cu (SAC305) solder alloy on a thin ENEPIG coated substrate were evaluated. In the wetting test, maximum wetting force increased with increasing immersion time, and the wetting force remained a constant value after 5 s immersion time. In the initial soldering reaction, $(Cu,Ni)_6Sn_5$ intermetallic compound (IMC) and P-rich Ni layer formed at the SAC305/ENEPIG interface. After a prolonged reaction, the P-rich Ni layer was destroyed, and $(Cu,Ni)_3Sn$ IMC formed underneath the destroyed P-rich Ni layer. In the high-speed shear test, the percentage of brittle fracture increased with increasing shear speed.

Mechanical and Electrical Reliability of Silver Nanowire Film on Flexible Substrate (유연기판 위에 제작된 Silver Nanowire 필름의 기계 및 전기적 신뢰성 연구)

  • Lee, Yo Seb;Lee, Won Jae;Park, Jin Yeong;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.4
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    • pp.93-99
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    • 2016
  • In this paper, we investigated the mechanical and electrical reliability of silver nanowire (AgNW) films. In particular, the durability and reliability of AgNW films were studied when the AgNW film was subjected to the bending deformation under current flow. The electrical durability of AgNW was evaluated by observing changes in heat generation and current density occurring in AgNW through voltage and current tests. The AgNW film showed a constant resistance change up to a bending radius of 2 mm and 200,000 cycles in the bending fatigue tests. The over-coating layer has an effect of improving the durability of the AgNW film. In the case of AgNW with the over-coating layer, heat was uniformly dissipated on the surface of AgNW film, whereas in the case of AgNW film without the over-coating layer, heat was generated locally. In the bending test under the current flow, the current density of the AgNW film was continuously decreased up to 52.4%. During bending, the AgNW was deformed due to mechanical deformation such as tensile, bending and sliding of the AgNW, consequently contact resistance of the AgNW was increased, leading to a electrical breakdown of AgNW by Joule heating. It was found that the application of the over-coating layer can improve the electrical and mechanical reliability of the AgNW film.

Analysis of Shear Stress Type Piezoresistive Characteristics in Silicon Diaphragm Structure (실리콘 다이아프램 구조에서 전단응력형 압전저항의 특성 분석)

  • Choi, Chae-Hyoung;Choi, Deuk-Sung;Ahn, Chang-Hoi
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.55-59
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    • 2018
  • In this paper, we investigated the characteristics of shear stress type piezoresistor on a diaphragm structure formed by MEMS (Microelectromechanical System) technology of silicon-direct-bonding (SDB) wafers with Si/$SiO_2$/Si-sub. The diaphragm structure formed by etching the backside of the wafer using a TMAH aqueous solution can be used for manufacturing various sensors. In this study, the optimum shape condition of the shear stress type piezoresistor formed on the diaphragm is found through ANSYS simulation, and the diaphragm structure is formed by using the semiconductor microfabrication technique and the shear stress formed by boron implantation. The characteristics of the piezoelectric resistance are compared with the simulation results. The sensing diaphragm was made in the shape of an exact square. It has been experimentally found that the maximum shear stress for the same pressure at the center of the edge of the diaphragm is generated when the structure is in the exact square shape. Thus, the sensing part of the sensor has been designed to be placed at the center of the edge of the diaphragm. The prepared shear stress type piezoresistor was in good agreement with the simulation results, and the sensitivity of the piezoresistor formed on the $2200{\mu}m{\times}2200{\mu}m$ diaphragm was $183.7{\mu}V/kPa$ and the linearity of 1.3 %FS at the pressure range of 0~100 kPa and the symmetry of sensitivity was also excellent.