• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.47 no.3
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• pp.211-219
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• 2014

To confirm the food quality and storage stability of commercial Korean kamaboko, we experimented with the composition and textural properties using various surimis and kamaboko products. We also investigated changes in protein digestibility and lipid oxidation of vacuum packed products under chilled storage at $4{\pm}1^{\circ}C$. Among the fish meatbased surimi, vegetable mixed surimi had the lowest protein content (23.73 %), as compared to other surimi (51.9-73.6%). Siginificant (P<0.05) differences in protein, lipid content and degree of fat oxidation were noted between the fried kamaboko products of three companies. Adhesiveness, springiness, cohesiveness, gumminess, chewiness and resilience were similar in all samples, but there were notable differences in hardness and fractuability between samples. In vitro protein digestibility and trypsin indigestible substrate (TIS) were not inversely proportional in fried kamaboko products. The protein digestibility (80.30%) of steamed vegetable mixed fried kamaboko was lower than that of other fried samples (84.9-86.2%). Computed protein efficiency ratio (C-PER) of companies A and C's fried kamaboko was 2.6 but company B's was 1.9. There was no noticeable change in thiobarbituric acid reactive substances (TBARs) or protein digestibility for any of the vacuum packed fried kamaboko during 30 days of chilled storage.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.3.1-3.1
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• 2011

Over the past decade, the major efforts for lowering the cost of electronics has been devoted to increasing the packaging efficiency of the integrated circuits (ICs), which is defined by the ratio of all devices on system-level board compared to the area of the board, and to working on a larger but cheaper substrates. Especially, in flexible electronics, the latter has been the favorable way along with using novel nanomaterials that have excellent mechanical flexibility and electrical properties as active channel materials and conductive films. Here, the tool for achieving large area patterning is by printing methods. Although diverse printing methods have been investigated to produce highly-aligned structures of the nanomaterials with desired patterns, many require laborious processes that need to be further optimized for practical applications, showing a clear limit to the design of the nanomaterial patterns in a large scale assembly. Here, we demonstrate the alignment of highly ordered and dense silicon (Si) NW arrays to anisotropically etched micro-engraved structures using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures. The assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays were subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As proof-of-concept, flexible back-gated NW field effect transistors (FETs) were fabricated. The fabricated FETs had an effective hole mobility of 0.17 $cm2/V{\cdot}s$ and an on/off ratio of ${\sim}1.4{\times}104$. These results demonstrate that our NW gravure printing technique is a simple and effective method that can be used to fabricate high-performance flexible electronics based on inorganic materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.305-308
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• 2006

Advanced mobile communication devices require a bright, high information content display in a small, light-weight, low power consumption package. For portable applications flexible (or conformable) and rugged displays will be the future. In this paper we outline our progress towards developing such a low power consumption active-matrix flexible OLED $(FOLED^{TM})$ display. We demonstrate full color 100 ppi QVGA active matrix OLED displays on flexible stainless steel substrates. Our work in this area is focused on integrating three critical enabling technologies. The first technology component is based on UDC's high efficiency long-lived phosphorescent OLED $(PHOLED^{TM})$ device technology, which has now been commercially demonstrated as meeting the low power consumption performance requirements for mobile display applications. Secondly, is the development of flexible active-matrix backplanes, and for this our team are employing PARC's Excimer Laser Annealed (ELA) poly-Si TFTs formed on metal foil substrates as this approach represents an attractive alternative to fabricating poly-Si TFTs on plastic for the realization of first generation flexible active matrix OLED displays. Unlike most plastics, metal foil substrates can withstand a large thermal load and do not require a moisture and oxygen permeation barrier. Thirdly, the key to reliable operation is to ensure that the organic materials are fully encapsulated in a package designed for repetitive flexing, and in this device we employ a multilayer thin film Barix encapsulation technology in collaboration with Vitex systems. Drive electronics and mechanical packaging are provided by L3 Displays.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.323-323
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• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.1-7
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• 2014

Aluminum nitride, which has outstanding properties such as high thermal conductivity and electrical resistivity, has been received a great attention as a substrate and packaging material of semiconductor devices. Since aluminum nitride has a high sintering temperature of 2173 K and its properties depends on the impurity level, it is necessary to synthesize high-purity and nano-sized aluminum nitride powders for the applications. In this research, we synthesized high purity aluminum nitride nanopowders from aluminum using RF induction thermal plasma system. Sheath gas (NH3) flow was controlled to establish the synthesis condition of high purity aluminum nitride nanopowders. The obtained aluminum nitride nanopowders were evaluated by XRD, SEM, TEM, BET, FTIR and N-O analysis.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.1
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• pp.37-42
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• 2012

LIFT (laser-induced forward transfer) is an advanced laser processing method used for selectively transferring micron-sized objects. In our study, this process was applied in order to deposit solder balls in microsystem packaging processes for electronics. Locally melted solder paste could be transferred to a rigid substrate using laser pulses. A thin glass plate with a solder cream layer was used as a donor film, and an IR laser pulse (wavelength = 1070 nm) was used to transfer a micron-sized solder ball to the receptor. Mass balance and energy balance were applied to analyze the shape and temperature profiles of the solder paste drops. The transferred solder bumps had measured diameters of 30-40 ${\mu}m$ and thicknesses of 50 ${\mu}m$ in our experiment. The limits and applications of this method are also presented.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.217-220
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• 2009

Conductive adhesives have been investigated for use in microelectronics packaging as a lead-free solder substitute due to their advantages, such as low bonding temperature. However, high resistivity and poor mechanical behavior may be the limiting factors for the development of conductive adhesives. The metal fillers and the polymer resins provide electrical and mechanical interconnections between surface mount device components and a substrate. As metal fillers used in conductive adhesives, silver is the most commonly used due to its high conductivity and the stability. However the cost of conductive adhesives with silver fillers is much higher than usual lead-free solders and silver has poor electro-migration performance. So, copper can be a promising candidate for conductive filler metal due to its low resistivity and low cost, but oxidation causes this metal to lose its conductivity. In this study, electrically conductive adhesives (ECAs) using surface modified copper fillers were developed. Especially, in order to overcome the problem associated with the oxidation of copper, copper particles were coated with silver, and the silver-coated copper was tested as a filler metal. Especially the effect of silver coating on the electrical resistance just after curing and after aging was investigated. As a result, it was found that the electrical resistance of ECA with silver-coated copper filler was clearly lower and more stable than that of ECA with pure copper filler after curing process. And, during high temperature storage test, the degradation rate of electrical resistance for ECA with silver coated copper filler was quite slower than that for ECA with pure copper filler.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.667-673
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• 2010

Copper filling into TSV (through-silicon-via) and reduction of the filling time for the three dimensional chip stacking were investigated in this study. A Si wafer with straight vias - $30\;{\mu}m$ in diameter and $60\;{\mu}m$ in depth with $200\;{\mu}m$ pitch - where the vias were drilled by DRIE (Deep Reactive Ion Etching) process, was prepared as a substrate. $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to reduce the time required complete the Cu filling into the TSV, the PPR (periodic pulse reverse) wave current was applied to the cathode of a Si chip during electroplating, and the PR (pulse-reverse) wave current was also applied for a comparison. The experimental results showed 100% filling rate into the TSV in one hour was achieved by the PPR electroplating process. At the interface between the Cu filling and Ti/ Au functional layers, no defect, such as a void, was found. Meanwhile, the electroplating by the PR current showed maximum 43% filling ratio into the TSV in an hour. The applied PPR wave form was confirmed to be effective to fill the TSV in a short time.