• Title/Summary/Keyword: Packaging, Insertion Loss

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Lour Voltage Operated RFMEMS Switch for Advanced Mobile System Applications (차세대 이동통신시스템에 적용을 위한 저전압구동의 RFMEMS 스위치)

  • Seo, Hye-K.;Park, Jae-Y.
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.2395-2397
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    • 2005
  • A low voltage operated piezoelectric RF MEMS in-line switch has been realized by using silicon bulk micromachining technologies for advanced mobile/wireless applications. The developed RF MEMS in-line switches were comprised of four piezoelectric cantilever actuators with an Au contact metal electrode and a suspended Au signal transmission line above the silicon substrate. The measured operation dc bias voltages were ranged from 2.5 to 4 volts by varying the thickness and the length of the piezoelectric cantilever actuators, which are well agreed with the simulation results. The measured isolation and insertion loss of the switch with series configuration were -43dB and -0.21dB (including parasitic effects of the silicon substrate) at a frequency of 2GHz and an actuation voltage of 3 volts.

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S-Parameter Simulation for Trench Structure and Oxide High Dielectric of Trench MIM Capacitor (Trench구조와 산화물 고유전체에 따른 Trench MIM Capacitor S-Parameter 해석)

  • Park, Jung-Rae;Kim, Gu-Sung
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.167-170
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    • 2021
  • Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO2, Al2O3, and Ta2O5 are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

Theoretical Analysis and Modeling for PCB Embedded Tunable Filter with Inductive Coupling (유도결합구조 가변형 대역통과필터의 이론적 분석 및 모델링)

  • Lee, Tae-C.;Park, Jae-Y.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1929_1930
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    • 2009
  • Fully embedded tunable bandpass filter (BPF) with inductive coupling circuits is newly designed and demonstrated for UHF TV tuner ranged from 500MHz to 900MHz receivers. Conventional RF tuning circuit with an electromagnetic coupled tunable filter has several problems such as large size, high volume, and high cost, since the electromagnetic coupled filter is comprised of several passive components and air core inductors to be assembled and controlled manually. To address these obstacles, compact tunable filter with inductive coupling circuit was embedded into low cost organic package substrate. The embedded filter was optimally designed to have high performance by using high Q spiral stacked inductors, high dielectric $BaTiO_3$ composite MIM capacitors, varactor diodes. It exhibited low insertion loss of approximately -2dB, high return loss of below -10dB, and large tuning range of 56.3%. It has an extremely compact size of $3.4{\times}4.4{\times}0.5mm^3$.

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Embedded Combline Band-Pass Filter using LTCC Technology (LTCC 기술을 이용한 집적형 컴라인 대역 통과 여파기)

  • 임옥근;김용준
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.1
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    • pp.71-76
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    • 2004
  • A compact embedded tapped-line combline filter with interdigital capacitors using low temperature co-fired ceramic (LTCC) technology for wireless application is proposed. Also, in-situ measurement using T-pattern microstrip resonator was performed to acquire exact knowledge of electrical properties of the LTCC substrate. The proposed filter makes it possible to realize a relatively small size, 2.7mm${\times}$2.03mm. by employing interdigital and combline structure. It shows 1.8 ㏈ insertion loss, 37.6㏈ return loss, and 280 MHz bandwidth at the center frequency of 5.09 GHz. Its small size and simple structure make it a good candidate as an integrated filter for various LTCC substrates.

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Ultra-Wide-Band (UWB) Band-Pass-Filter for Wireless Applications from Silicon Integrated Passive Device (IPD) Technology

  • Lee, Yong-Taek;Liu, Kai;Frye, Robert;Kim, Hyun-Tai;Kim, Gwang;Aho, Billy
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.1
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    • pp.41-47
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    • 2011
  • Currently, there is widespread adoption of silicon-based technologies for the implementation of radio frequency (RF) integrated passive devices (IPDs) because of their low-cost, small footprint and high performance. Also, the need for high speed data transmission and reception coupled with the ever increasing demand for mobility in consumer devices has generated a great interest in low cost devices with smaller form-factors. The UWB BPF makes use of lumped IPD technology on a silicon substrate CSMP (Chip Scale Module Package). In this paper, this filter shows 2.0 dB insertion loss and 15 dB return loss from 7.0 GHz to 9.0 GHz. To the best of our knowledge, the UWB band-pass-filter developed in this paper has the smallest size ($1.4\;mm{\times}1.2\;mm{\times}0.40\;mm$) while achieving equivalent electrical performance.

Electrical Behavior of the Circuit Screen-printed on Polyimide Substrate with Infrared Radiation Sintering Energy Source (열소결로 제작된 유연기판 인쇄회로의 전기적 거동)

  • Kim, Sang-Woo;Gam, Dong-Gun;Jung, Seung-Boo
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.71-76
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    • 2017
  • The electrical behavior and flexibility of the screen printed Ag circuits were investigated with infrared radiation sintering times and sintering temperatures. Electrical resistivity and radio frequency characteristics were evaluated by using the 4 point probe measurement and the network analyzer by using cascade's probe system, respectively. Electrical resistivity and radio frequency characteristics means that the direct current resistance and signal transmission properties of the printed Ag circuit. Flexibility of the screen printed Ag circuit was evaluated by measuring of electrical behavior during IPC sliding test. Failure mode of the Ag printed circuits was observed by using field emission scanning electron microscope and optical microscope. Electrical resistivity of the Ag circuits screen printed on Pl substrate was rapidly decreased with increasing sintering temperature and durations. The lowest electrical resistivity of Ag printed circuit was up to $3.8{\mu}{\Omega}{\cdot}cm$ at $250^{\circ}C$ for 45 min. The crack length arisen within the printed Ag circuit after $10{\times}10^4$ sliding numbers was 10 times longer than that of after $2.5{\times}10^4$ sliding numbers. Measured insertion loss and calculated insertion loss were in good agreements each other. Insertion loss of the printed Ag circuit was increased with increasing the number of sliding cycle.

Design of PCB Embedded Balanced-to-unbalanced WiMax Duplexer Using Coupled LC Resonators (WiMAX 응용을 위한 결합 공진기 기반의 PCB 내장형 평형신호 듀플렉서의 설계)

  • Park, Ju-Y.;Park, Jong-C.;Park, Jae-Y.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1587_1588
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    • 2009
  • In this paper, PCB embedded balanced-to-unbalamced duplexer using coupled LC resonator was introduced for low cost dualband WiMax front-end-module application. In order to obtain the function of bandpass filter and balun transformer, proposed duplexer was configured by using magnetically coupled LC resonator. Out-of-band suppression was enhanced by applying two m-Derived transform circuits to obtain transmission zeros at 2GHz and 4.8GHz. In order to reduce the size of embedded duplexer, BaSrTiO3 (BST) composite high Dk RCC film was applied to improve the capacitance density. This high Dk film provided the capacitance density of 12.2 pF/mm2. The simulation results shows that fabricated duplexer had an insertion loss of 2.9dB and 5.5dB and return loss of 15dB and 16dB for 2.5GHz~2.6GHz and 3.5GHz~3.6GHz, respectively. The maximum magnitude and phase imbalance were 0.01dB and 0.17dB, and 1degree and 2degree in its passband, respectively. The out-of-band suppression was observed approximately 29dB and 40dB below 1.9GHz and over 4.5GHz, respectively. It has a volume of 6 mm $\times$ 7 mm $\times$ 0.7 mm (height).

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Wafer-Level Package of RF MEMS Switch using Au/Sn Eutectic Bonding and Glass Dry Etch (금/주석 공융점 접합과 유리 기판의 건식 식각을 이용한 고주파 MEMS 스위치의 기판 단위 실장)

  • Kang, Sung-Chan;Jang, Yeon-Su;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • Journal of Sensor Science and Technology
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    • v.20 no.1
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    • pp.58-63
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    • 2011
  • A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.

New Packaging and Characteristics of PIN PD for CWDM Transmission (저밀도 파장분할 다중화용 PIN PD 제작 및 특성)

  • Kang, Jae-Kwang;Chang, Jin-Heyon
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.4 s.37
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    • pp.323-330
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    • 2005
  • We fabricate PIN PD (Positive Intrinsic Negative Photo-Diode) for CWDM optical repeater and optical transmission system, and analyze theoretically the characteristics to verify the capability of device fabricated. Furthermore, we integrate CWDM filter into PD package to enhance the cost and the performance when compared to the conventional system, in which CWDM filter and PD package are linked by optical fusion splicing. The integrated CWDM PD is fabricated by three steps as follows: CWDM filter design, PD packaging, and product assembly and test. The results of measurement for PD fabricated reveal 0.5 dB bandwidth of 17 nm, isolation over 60 dB at transmission port and over 20 dB at reflection port. Also, the IMD3 for wireless communication is over 63 dBc, and the responsivity of PD presents over 0.9 A/W for 20 samples of the total 23 PD. The total insertion loss reduces about 0.4${\~}$0.7 dB due to the integrated assembly of CWDM and PD.

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Development of Dual Band Directional Coupler Applying Multi-layer Structure (다층 구조를 적용한 Dual band 방향성 결합기 개발에 관한 연구)

  • Yoo Myong Jae;Yoo Joshua;Park Seong Dae;Lee Woo S.;Kang Nam K.
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.2 s.31
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    • pp.43-47
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    • 2004
  • A coupler or divider is a microwave passive component used for power coupling or dividing. Regarding the trend of current telecommunication systems monolithic integration of passive components is highly desirable. In this study by the LTCC(Low temperature co-fired ceramics) technology a 2012 size type dual band coupler with multi-layer structure was fabricated. To achieve the desired coupling values for both DCS and EGSM bands, broad side coupled patterns were used with multi-layer structure. Its characteristics such as coupling, insertion loss, isolation and directivity values were measured and compared with simulation results.

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