• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.551-552
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• 2008

This paper presets a results of frequency response in variation of wire bonding length. A gold ball bonding is used as a wire bonding process, and a DPDT(double pole double thru) switch is adapted as a device for test. Wire length is ranged from 442um to 833um and a measured frequency range is from 1 GHz to 6 GHz. Little difference are measured in insertion loss and return loss depending on wire length. Measured S21 and S11 are -0.58 dB and -17.7 dB, respectively. S21 insertion loss is rising up and S11 insertion loss is falling down as the frequency is increased.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.97-101
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• 2021

In this study, Insertion loss according to the structural variant of interposer to Through Silicon Via (TSV) and Redistributed Layer (RDL) was studied through design of experiment. 3-Factors was considered as a variant, TSV depth, TSV diameter, RDL width with factor arrangement method and the response surface method from 400 MHz to 20 GHz. As a result, it was confirmed that as the frequency increased, the effect of RDL width was decreased and the effect of TSV depth and TSV diameter was increased. Also within the analysis range, to increasing RDL width, decreasing TSV depth, and fixing TSV diameter about 10.7 ㎛ was observed optimal result of Insertion loss.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.39-44
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• 2021

In this paper, two types of BPF(Band Pass Filter) which are hair-pin and interdigital have been designed for millimeter-wave application using two types of material which are LCP(Liquid Crystal Polymer) and PTFE(Polytetrafluoroethylene) and also, their performances such as bandwidth, insertion loss, and in-band flatness are compared. The proposed BPF are designed as third-order filters, and their pass band is from 26.5 GHz to 27.3 GHz. Interdigital BPF using PTFE substrate has most wide -3 dB S21 bandwidth of 7.8 GHz and hair-pin BPF using LCP substrate has most narrow -3 dB S21 bandwidth among the proposed four BPF. For in-band insertion loss, hair-pin BPF using PTFE substrate achieves low insertion loss better than -0.667 dB, and hair-pin BPF using LCP substrate exhibits relatively high insertion loss among the proposed four BPF better than -0.937 dB. However, the maximum difference in insertion loss performance among the proposed four BPF is 0.27 dB, which is too small to negligible. For in-band flatness, interdigital BPF using PTFE substrate shows greatest performance of 0.017 dB, and hair-pin BPF using LCP substrate exhibits the lowest performance of 0.07 dB. There are tiny difference in in-band flatness performance of 0.053 dB. As a results, it is considered that the BPF using LCP substrate can derive the performances similar to that of the BPF using PTFE substrate in Millimeter-wave band.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.124-128
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• 2001

We apply for the first time a low cost and loss wafer level packaging technology for RF-MEMS device. The proposed structure was simulated by finite element method (FEM) tool (HFSS of Ansoft). S-parameter measured of the package shows the return loss (S11) of 20dB and the insertion loss (S21) of 0.05dB.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1972-1975
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• 2002

In this paper, we have proposed low temperature co-fired ceramic (LTCC) based packaging for RF MEMS devices. The packaging structure is designed and evaluated with 3D full field simulation. 50 ${\Omega}$ matched coplanar waveguide(CPW) transmission line is employed as the test vehicle to evaluate the performances of the proposed package structure. The line is encapsulated with the LTCC packaging lid and connected to the via feed line. To reduce the insertion loss due to the packaging lid, the cavity with via post is formed in the packaging lid. The performances of the package structure is simulated with the different cavity depth and via-to-via length. Simulation results show that the proposed package structure has reflection loss better than 20 dB and insertion loss lower than 0.1 dB from DC to 30 GHz with the cavity depth and via-to-via length of 300 ${\mu}m$ and 350 ${\mu}m$, respectively. To realize the designed package structure, the cavity patterning is tested using the sandblast of LTCC.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.10a
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• pp.255-267
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• 2006

LTCC Technology is very suitable for 60 GHz application $\blacksquare$ LTCC substrate shows low loss at 60 GHz. - low insertion and return losses $\blacksquare$ Microstrip or CBCPW line is sultable for transmission lines at 60 GHz. - low loss (0.1dB/mm) $\blacksquare$ Single ribbbon bonding is adequate for interconnection - simple - low loss (0.1dB/bonding) $\blacksquare$ Characteristics of MMIC module - Gain difference (${\Delta}S21$) : 0.4 dB

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.557-558
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• 2008

This paper presents the effects of via losses to be connected with an embedded DPDT(Double Pole Double Thru) in a substrate. The substrate consists of two ABF(Ajinomoto Bonding Film) and a Epoxy core. In order to verify and test effects of via, via chains in a substrate using SoP-L process are proposed and measured. Via loss can be calculated as averaging the total via holes. The exact loss of a DPDT switch embedded in substrate are extracted by using the results of via chain and measured data from embedded DPDT. The calculated one via insertion loss is about 0.0005 dB on basis of measured via chains. This result confirms very low loss in via. So the inserti on loss of the embedded switch is confirmed only switch loss as loss is 0.4 dB.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.259-263
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• 2002

We design and characterize a millimeter-wave ceramic package in a frequency range from DC to 300Hz using the FEM(Finite Element Method) calculation. From these calculation results, the designed feed-through structure achieved 0.32 dB, 16.8 dB of the insertion loss and the return loss at 30 GHz respectively. This ceramic package will be useful for MMIC(Monolithic Microwave Integrated Circuit) modules.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.147-151
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• 2002

We fabricated and characterized a millimeter-wave ceramic package in a frequency range from 6 to 40㎓ using the LTCC(Low Temperature Cofired Ceramic) Technology and TRL(Thru-Reflect-Line) calibration method. From these measurement results, the fabricated feed-through structure achieved 0.5 dB, 14 dB of the insertion loss and the return loss at 30 GHz respectively. This ceramic package will be useful for MMIC(Monolithic Microwave Integrated Circuit) modules.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1237-1241
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• 2003

In this paper, we report a novel RF-MEMS packaging technology with lightweight, small size, and short electric path length. To achieve this goal, we used the ultra thin silicon substrate as a packaging substrate. The via holes lot vortical feed-through were fabricated on the thin silicon wafer by wet chemical processing. Then, via holes were filled and micro-bumps were fabricated by electroplating. The packaged RF device has a reflection loss under 22 〔㏈〕 and a insertion loss of -0.04∼-0.08 〔㏈〕. These measurements show that we could package the RF device without loss and interference by using the vertical feed-through. Specially, with the ultra thin silicon wafer we can realize of a device package that has low-cost, lightweight and small size. Also, we can extend a 3-D packaging structure by stacking assembled thin packages.