• Proceedings of the Acoustical Society of Korea Conference
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• 1997.06a
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• pp.40-43
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• 1997

It is known tat the echoes from the most objects differ from the incident pulses in amplitude and frequency .Especially, the frequency in echoes from moving target is shiftby the Doppler effect. it causes to reduce the receiving sensitivity of piezoelectric transducers that have definite band width. The electric impedance, whichis connected to the electrical terminals, notably changes the resonant frequency of a thickeness mode piezoelectric vibrator with high electromechanical doupling due to the electroelastic effect. Using this effect, we have developed a frequency controllable ultrasonic transducer which is mad eof multi-layered PZT disks to adjust to frequency shifted by Doppler effect. The characteristics of transducer can be obtained by using the equivalent circuit of transmission line model. It was confirmed experimentally that the center frequency and band width of the trasducer could be controlled by the conditions of the electrical terminals. These results coincided with theoretical results.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

• Journal of Ocean Engineering and Technology
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• v.26 no.1
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• pp.27-33
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• 2012

This paper presents the effect of temperature on the impedance-based damage monitoring of steel-bolt connections using wireless impedance sensor nodes. In order to achieve the objective, the following approaches are implemented. First, a temperature-compensated damage monitoring scheme that includes a temperature compensation model and damage detection method is described. The temperature compensation model is designed by analyzing the linear regressions between the temperatures and impedance signatures. The correlation coefficient of the impedance signatures is selected as the damage index to monitor the damage occurrence in the target structures. Second, a wireless impedance sensor node is described for the design of the hardware components and embedded software. Finally, the performance of the temperature-compensated impedance-based damage monitoring scheme is evaluated for detecting a loose bolt in the steel-bolt connections on a lab-scale steel girder under various temperatures.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.81-87
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• 2012

This paper focuses on three-dimensional measurement system of micro balls on micro Ball-Grid-Array(BGA) packages in-line. Most of visual inspection system still suffers from sophisticate reflection characteristics of micro balls. For accurate shape measurement of them, a specially designed visual sensor system is proposed under the sensing principle of phase shifting moire interferometry. The system consists of a pattern projection system with four projection subsystems and an imaging system. In the projection system, four subsystems have spatially different projection directions to make target objects experience the pattern illuminations with different incident directions. For the phase shifting, each grating pattern of subsystem is regularly moved by PZT actuator. To remove specular noise and shadow area of BGA balls efficiently, a compact multiple-pattern projection and imaging system is implemented and tested. Especially, a sensor fusion algorithm to integrate four information sets, acquired from multiple projections, into one is proposed with the basis of Bayesian sensor fusion theory. To see how the proposed system works, a series of experiments is performed and the results are analyzed in detail.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.2
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• pp.177-184
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• 2012

An optical defect detection method using ESPI(electronic speckle pattern interferometry) is proposed. ESPI is widely used as a non-contact measurement system which show deformation and phase map in real time. ESPI can be divided as the in-plane, out-of-plane and shearography by operation principle and target object and also divided with bulk type and optic fiber type by the optic configurations. This paper is focused on optic fiber type out-of-plane ESPI, which has the following advantages: (1) low cost; (2) reduction of the unreliable factors generated by separated optic components; (3) simplification of the optic configuration; (4) great reduction of volume; (5) flexibility, to be easily designed into different structures to adapt to inaccessible environments such as pipeline cavity and so on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.