• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.570-573
• /
• 2002

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

• Journal of Advanced Marine Engineering and Technology
• /
• 제20권5호
• /
• pp.93-102
• /
• 1996

Laser-induced plume and laser-target interaction during pulsed laser deposition are demonstrated for a lead zirconate titanate (PZT). A KrF excimer laser (wavelength 248nm) was used and the laser was pulsed at 20Hz, with nominal pulse width of 20ns. The laser fluence was~$16J/cm^2,$ with 100mJ per pulse. The laser-induced plasma plume for nanosecond laser irradiation on PZT target has been investigated by optical emission spectra using an optical multichannel analyzer(OMA) and by direct observation of the plume using an ICCD high speed photography. OMA analysis showed two distinct ionic species with different expansion velocities of fast or slow according to their ionization states. The ion velocity of the front surface of the developing plume was about $10^7$cm/sec and corresponding kinetic energy was about 100eV. ICCD photograph showed another kind of even slower moving particles ejected from the target. These particles considered expelled molten parts of the target. SEM morphologies of the laser irradiated targets showed drastic melting and material removal by the laser pulse, and also showed the evidence of the molten particle ejection. The physics of the plasma(plume) formation and particle ejection has been discussed.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
• /
• pp.122-122
• /
• 1999

• 한국표면공학회지
• /
• 제29권5호
• /
• pp.330-337
• /
• 1996

A rf reactive sputter deposition technique was adopted to deposit ferroelectric lead zirconate titanate (PZT) thin films with high rate from a ZrTi alloy target combined with PbO pellets. Deposition characterisitics including the effects of PbO are ratio were discussed. A new deposition mode called the quasi-metallic mode was observed. Perovskite PZT films were prepared at a growth temperature as low as$ 450^{\circ}C$. However, because the target structure is unstable, weproposed a mixture target consisted of Zr, Ti and PbO. Fundamental experiments were investigated using the powder target. Perovskite PZT film could be obtained at $450^{\circ}C$ with better electrical properties also.

• 한국재료학회지
• /
• 제3권1호
• /
• pp.19-27
• /
• 1993

RF magnetrom sputtering으로 52/48 PZT target을 사용하여 PZT thin film을 증착시킨후, furnace annealing을 실시하여 Si 기판에서는 55$0^{\circ}C$에서부터 안정상인 peroskite구조가 형성되었다. Si기판위에서는 후속열처리시 계면에 상당한 산화막층이 형성되었으며 TiN 기판위에서는 후속열처리시 TiN층은 사라지고 Ti$O_2$층이 형성되었다. Si$O_2$기판에서는 후속열처리후에도 안정한 PZT film을 형성시킬 수 있었다. As-depo.시에는 PZT film의 조성비가 균일하게 유지되었으나 75$0^{\circ}C$후속열 처리시에는 상당량의 Pb가 Si기판으로 diffusion하였으며 Si도 out-diffusion하였다. 전기적 특성은 10KHz에서 C-V를 측정결과 약 1300정도의유전상수 값이 나왔으나 후속열처리시 표면에 crack이 발생하였다.

• 한국세라믹학회지
• /
• 제39권8호
• /
• pp.742-749
• /
• 2002

R. F. magnetron sputtering법을 이용하여 Pt/Ti/$SiO_2$/Si 기판 위에 $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ target을 사용하여 박막을 제조하였다. Interlayer(PbO, $TiO_2$, PbO/$TiO_2$)층을 삽입함으로써 박막의 결정성을 향상시켰고, 박막의 기판온도도 상당히 낮출 수 있었다. 순수한 PZT에 비하여 interlayer를 삽입한 PZT는 높은 유전상수과 낮은 유전손실 및 높은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. 이러한 PZT 박막과 interlayer 층은 증착온도에서 서로 반응하여 하나의 고용체를 이루지 않고, 각각 독립적인 층으로 존재함을 XPS 분석을 통해 확인하였다. 여러 interlayer중 특히 PbO/$TiO_2$는 우수한 유전특성(${\varepsilon}_r$=414.94, tan${\delta}$=0.0241, Pr=22${\mu}C/cm^2$)을 나타내었고 가장 효과적인 seed로써의 역할을 하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제36회 동계학술대회 초록집
• /
• pp.211.2-211.2
• /
• 2009

• Bulletin of the Korean Chemical Society
• /
• 제18권1호
• /
• pp.56-61
• /
• 1997

Lead zirconate titanate (PZT) thin fills were deposited onto the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition with the second harmonic wavelength (532 nm) of Nd:YAG laser. In order to determine the optimum conditions for the film deposition, the phase of the films were investigated as functions of ambient oxygen pressure, substrate temperature, and laser fluence. Also the chemical composition analysis was conducted for the PZT films deposited under various ambient oxygen pressure. When the distance between substrate and bulk PZT target is set to 20 mm, the optimum conditions have been determined to be 3 torr of oxygen pressure, 1.5 J/cm2 of laser fluence, and 823-848(±10) K range of substrate temperature. At these conditions, perovskite phase PZT films were obtained on platinized silicon. The chemical composition of the films is very similar to that of PZT bulk target. The physical structure of the deposited films analyzed by scanning electron microscopy shows a columnar morphology perpendicular to the substrate surface. Capacitance-Voltage hysteresis loop measurements show also a typical characteristics of ferroelectric thin film. The dielectric constant is found to be 528 for the 0.48 μm thickness of PZT thin film.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제50권1호
• /
• pp.24-29
• /
• 2001

PZT thin films(4000A) have prepared onto 1737 corning glass and ITO coated glass substrates with a RF magnetron sputtering system using Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$ceramic target, Electrical properties of PZT thin film deposited after ITO coated glass were P${\gamma}$ was decreased by 25% after 109cycles, respectively. With the RTA treatment duration and temperature increased, the crystallization of PZT thin films were enhanced, however, the leakage current density became higher. The leakage current mechanism was found to be space charge conduction by the defects and oxygen vacancies existing in PZT and PZT/bottom electrode interfaces.

• 한국전기전자재료학회논문지
• /
• 제16권3호
• /
• pp.186-189
• /
• 2003

The role of excess Pb about the crystallization behavior and electrical properties in b(Zr$\sub$0.52/Ti$\sub$0.48/)O3(PZT) thin films has not been precisely defined. In this work, the effect of excess Pb content on the ferroelectric properties of these films was investigated. To analyze the effect, PZT films containing various amounts of excess Pb were Prepared. PZT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (111) and no pyrochlore phase was observed. As higher excess Pb was included, the films showed that value of leakage current shift from 2.03${\times}$10$\^$-6/ to 6.63 ${\times}$ 10$\^$-8/A/cm$^2$ at 100kV/cm, and value of remanent polarization shift from 8.587 ${\mu}$C /cm$^2$ to 4.256 ${\mu}$C/ cm$^2$. Electrical properties of PZT thin film affected by Pb excess content of target were explained to be caused of defect among space charges and defect grain boundaries.