• Proceedings of the KIEE Conference
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• 2008.05a
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• pp.169-170
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• 2008

The heterolayered PZT/PT thick films were fabricated by two different methods - thick films of the PZT by screen printing method on alumina substrates electrodes with Pt, thin films of $PbTiO_3$ by the spin coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $PbTiO_3$ coating solution at interface of the PZT thick films. The insertion of $PbTiO_3$ interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $PbTiO_3$ layers. The leakage current density of the PZT/$PbTiO_3-1$ film is less that $4.41{\times}10^{-9}\;A/cm^2$ at 5 V.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.991-1000
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• 1996

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb$_{2}$3/O$_{3}$) (PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol ratio of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20), #4(40:40:20), #5(40:50:10), #6(35:45:20) and #7(30:50:20) respectively. The spin-coated PZT-PNN films were heat-treated at 350.deg. C for decomposition of residual organics, and were sintered from 450.deg. C to 750.deg. C for crystallization. The substrates, such as Pt and Pt/TiN/Ti/TiN/Si were used for the spin coating of PZT PNN films. The perovskite phase was observed in the PZT-PNN films heat-treated at 500.deg. C. The crystalline of the PZT-PNN films was optimized at the sintering of 700.deg. C. By the result of AES analysis, It is confirmed that the films of TiN/Ti/TiN was a good diffusion barrier and that co-diffusion into the each films was not observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.620-624
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• 2016

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1477-1479
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• 2000

The annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},Ti_{0.48})O_3$) thin films(4000${\AA}$) have been investigated for a structure of PZT/Pt/Ti/ITO coated glass. Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at 650$^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were 15.8[${\mu}C/cm^2$], 95[kV/cm] respectively. Polarization value decrease about 10% after $10^9$ cycles.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.64-67
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• 2000

Reactively sputtered $Pb(Zr,Ti)O_3$(PZT) films on $IrO_2$and Ir were evaluated with particular consideration on interface properties. The $IrO_2$and Ir were previously annealed at $650^{\circ}C$ in $O_2$or $N_2$atmosphere, respectively. There was no appreciable roughening in the interface of the $PZT/IrO_2$respective to that of the PZT/Ir; the rms roughness of $IrO_2$and Ir was about 3nm and 10nm, respectively. The ferroelectric properties of the $PZT/IrO_2$were found to be better than that of the PZT/Ir; however, the leakage current of the $PZT/IrO_2$was slightly larger than that of the PZT/Ir. The $PZT/IrO_2$thin films did not exhibit any fatigue up to $10^{11}$ cycles; the $P^*\;_r-P^r$ value decreased only from 16.6 to 14$\mu$C/$\textrm{cm}^2$ until $10^{12}$ polarization reversals. On the other hand, although thin $IrO_2$layer was formed between PZT and Ir, the PZT/Ir thin films began to undergo fatigue after $10^9$ polarization reversals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.103-104
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• 2006

$Pb(Zr,Ti)O_3(PZT)$ is very attractive ferroelectric materials for ferroelectric random access memory (FeRAM) applications because of its high polarization ability and low process temperature. However, Chemical Mechanical Polishing (CMP) pressure and velocity must be carefully adjusted because FeRAM shrinks to high density devices. The contaminations such as slurry residues due to the absence of the exclusive cleaning chemicals are enough to influence on the degradation of PZT thin film capacitors. The surface characteristics of PZT thin film were investigated by the change of process parameters and the cleaning process. Both the low CMP pressure and the cleaning process must be employed, even if the removal rate and the yield were decreased, to reduce the fatigue of PZT thin film capacitors fabricated by damascene process. Like this, fatigue characteristics were partially controlled by the regulation of the CMP process parameters in PZT damascene process. And the exclusive cleaning chemicals for PZT thin films were developed in this work.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.21-24
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• 2005

This work is to present each properties and the interfacial characterization between PZT layer and LSMO layer of PZT/LSMO/Pt. LSMO thin film grown by KrF(248 nm) excimer lasers are used in pulsed in pulsed laser deposition(PLD). PZT coposites thin films were deposited by spin coating using a commercial resist spinner. LSMO thin film by deposition oxygen pressure 125 mtorr have rhombohedral structure on Pt(111) substrate. The PZT/LSM/Pt pre-orientate to [111] direction. The final thin films were shown that magnetic and electric property was typical value, respective. We report that the lattice between the PZT/LSMO thin film and the substrate plays a very important role and may control to another effects.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3304-3306
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• 1999

In this study, we used the sputtering method with single target to obtain the thick and uniform PZT($PbZrTiO_3$) films for micromached IR sensor application. Then, we investigated the etching characteristics and conditions which is necessary process to fabricate the IR sensor. We tested the C-axis orientation and P-E loop of the deposited PZT films with the XRD and RT66A, respectively. Also we investigated the surface of the films by the AFM and SEM analysis.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.225-227
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• 1993

Pb(Zr, Ti)$O_3$ ferroelectric thin layers were deposited onto Pt/$SiO_2$/Si substrates by Sol-Gel processing and annealed by RTA at $600^{\circ}C$ for $20{\sim}30\;sec$. microstructure of the films was examined by XRD and SEM analysis. Electrical properties of PZT thin films with different Zr/Ti ratio yield $P_r$ ranging $10{\sim}21{\mu}C/cm^2$, $E_c$, ranging $37.5{\sim}137.5\;kV/cm$, switching times faster than 180nsec, and leakage current about $20{\mu}A/cm^2$. The film was endured about $10^{10}$ fatigue cycles.