• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.43-43
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.65-65
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.160-160
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1994.05a
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• pp.104-104
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• 1994

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.198-199
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• 2002

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2209-2210
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.577-578
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1243-1244
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1703-1704
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.