• Electrical & Electronic Materials
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• v.7 no.2
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• pp.152-156
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• 1994

The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.596-600
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• 1998

A method for the nondestructive read-out of the memory in ferroelectric thin films is demonstrated using the detection second harmonic currents introduced in the ferrolelectric capacitor as a response to an ac signal. The sign and phase of the second harmonic current depends on the polarized state +$P_r or -P_r$, The studied ferroelectric PZT thin film is found to have desirable features for the use as a memory element. This method and material seems as a promising approach for the nonvolatile memory storage.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1069-1074
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• 1999

본 연구에서는 PbZr(sub)0.53Ti(sub)0.47O$_3$(PZT) 박막을 복수 도포함에 따른 박막내의 응력을 온도의 함수로 실시간(in situ) 측정하였으며, 응력발생의 원인에 박막의 건조, 열분해(pyrolysis), 치밀화 및 결정화 현상과 연관시켜 설명하였다. 도포직후 단층박막에 생성된 55MPa의 인장응력은 가열됨에 따라$ 300^{\circ}C$-$350^{\circ}C$에서 최대 145MPa로 증가하였으며, 박막내의 응력은 모든 온도구간에서 항상 인장응력을 나타내었더. 다층도포시 $650^{\circ}C$까지 열처리 주기를 완료한 층이 두꺼워질수록 새로 도포한 층의 영향은 점차 감소하였으며, 9층박막에 이르러서는 가열과 냉각에 따라 응력이 동일하게 변화하였다. 응력측정 결과 다층박막의 치밀화는 $350^{\circ}C$에서 시작되어 $520^{\circ}C$-$550^{\circ}C$ 부근에서 완료되는 것으로 나타났으며 치밀화가 시작하는 온도는 미세경도 측정결과와 일치하였다. $PbTiO_3$(PT)와 달리 PZT 다층박막은 Si 기판 위에서 perovskite로의 결정화가 일어나지 않았다.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.173-179
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• 2006

We have investigated structural and electrical properties of $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT) thin films deposited by pulsed laser deposition methods. PZT thin films have been deposited on $LaMnO_3$ (LMO) bottom electrodes with $LaAlO_3$ (LAO) substrates during different deposition times. High-resolution x-ray diffraction data have shown that all the PZT films and bottom electrodes are highly oriented. The thickness of each film is determined by field-emission scanning electron microscope. We have also observed root mean square roughness by using atomic force microscopy mode, and local polarization distribution and retention behavior of a ferroelectric domain by using piezoelectric force microscopy mode. A PZT/LMO structure has shown good ferroelectric and retention properties as the media for nano-storage devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.406-414
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• 1996

We studied the phase formation and the effect of electrical properties of PZT thin films with changing the oxygen partial pressure in cooling after deposition of PZT thin film by reactive sputtering method. The roughness of thin film increased with decreasing the oxygen partial pressure in cooling due to the evaporation on the surface ofthin films and the grain size was not changed very much. The hysteresis property of PZT thin film was improved toward having a good squareness with increasing the cooling oxygen partial pressure. We observed the decrease of remanent polarization, retained polarization and coercive field with decreasing the oxygen partial pressure. Dielectric constant decreased gradually and internal bias field increased in the measurement of dielectric constant-voltage property with decreasing cooling oxygen partial pressure. We observed the increase of nonswitched polarization in the measurement of field accelerated retention and the decrease of nonswitched polarization with increasing the bias time.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.33-33
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.64-64
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• 1995

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.211.2-211.2
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.65-65
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.160-160
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• 2001