• 대한전기학회논문지
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• 제44권7호
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• pp.914-918
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• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.327-329
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• 2005

Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃(PZT) thin films were deposited by using a pulsed laser deposition method on a Pt/Ti/SiO₂/Si substrate with (Pb/sub 0.72/La/sub 0.28/)Ti/sub 0.93/O₃ (PLT) buffer and on a Pt/Ti/SiO₂/Si substrate without buffer. These films were annealed in H₂-contained ambient for 30 minutes at the substrate temperature of 400。C to evaluate the forming gas annealing effects. The comparative studies on the ferroelectric properties of these two films were carried out, which are shown that ferroelectric properties, such as remanent polarization didn't change in the case of PLT buffered PZT film while remanent polarization value of PZT film degraded from 20.8 C/㎠ to 7.3 C/㎠. The leakage current became higher in both cases, but that of the more-oriented PZT film had the moderate value of the 10/sup -6/ order of A/㎠. This is mainly because the hydrogen atoms which make the degradation of PZT films cannot infiltrate into the more -oriented PZT film as well as the less-oriented PZT film.

• 한국재료학회지
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• 제10권4호
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• pp.282-289
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• 2000

전자싸이클로트론공명-플라즈마 화학기상증착법으로 $PbTiO_3$박막을 증착하였다. $RuO_2$ 기판과 Pt 기판 위에 금속유기화합물 원료기체 유량 및 증착온도에 따라서 $PbTiO_3$박막의 증착특성을 연구하였다. $RuO_2$ 기판 위에서 Pt 기판에 비하여 Pb-oxide 분자의 잔류시간이 상대적으로 크고, 페로브스카이트 핵생성 밀도는 상대적으로 작으며, 단일한 페로브스카이트 상의 $PbTiO_3$ 박막을 얻을 수 있는 공정범위가 Pt 기판보다 좁았다. $PbTiO_3$ 박막 증착 전 Ti-oxide 씨앗층을 도입함으로써 $RuO_2$ 기판에서도 페로브스카이트 핵생성 밀도를 증가시켜 단일한 페로브스카이트 박막을 얻을 수 있는 공정범위가 확장되었다. $PbTiO_3$에서 Ti 성분을 Zr으로 일부 대체시킨 $Pb(Zr,Ti)O_3\;(PZT)$ 박막의 경우에도 Ti-oxide 씨앗층을 도입함으로써 넓은 공정범위에서 단일한 페로브스카이트 PZT 박막을 $RuO_2$기판 위에서도 제조할 수 있었다.

• 대한화학회지
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• 제24권1호
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• pp.53-62
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• 1980

본 실험에서는 혼합물중에서 한쪽 성분은 분체인 상태로 용액중에 분산시키고 이 용액중에서 다른 한 성분을 침전으로 석출시켜서 혼합물을 만드는 "부분침전법"이라는 새로운 혼합법으로 PZT ceramics를 만들기 위한 기초적 연구를 했다. 먼저 간단화 하기 위해서 $PbTiO_3$와 $PbZrO_3$의 생성반응을 개별적으로 검토했다. 그리고 이들 혼합상태가 ceramics 제조에 있어서 얼마나 중요한 인자인가도 다시 한번 확인시켰다.

• 한국전기전자재료학회논문지
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• 제16권12S호
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• pp.1195-1199
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• 2003

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, dielectric and piezoelectric properties of PSN-PZT[0.91Pb(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$0.03/(Zr$\sub$0.495/Ti$\sub$0.505/)$\sub$0.97/O$_3$-0.04Pb(Ni$\sub$1/2/W$\sub$1/2/)O$_3$+0.05BiFeO$_3$+0.3wt％MnO$_2$+0.6wt％CuO〕 ceramics were investigated according to Zr/Ti ratio. As Zr/Ti ratio is increased, electromechanical coupling factor(k$\sub$p/) and dielectric constant increased and then decreased after the ratio of Zr/Ti=50/50. Also, mechanical qualify factor(Q$\sub$m/) decreased and then increased after the ratio of Zr/Ti=50/50.

• 한국진공학회지
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• 제8권4A호
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• pp.425-431
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• 1999

$Pb(Zr_{0.52}, Ti_{0.48})O_3$ (PZT) thick films as an actuating material with conducting oxides, $(La_{0.5}Sr_{0.5}) CoO_3$ (LSCO), have been fabricated by sol-gel method for Optical Micro-Electro-Mechanical System (MEMS) devices, in which PZT/LSCO/SiO2 structures were used. In order to improve the adhesion to LSCO solution in order to enhance the wetting behavior of a water-based LSCO precursor solution and further to improve the adhesion between LSCO and $SiO_2$ layers. PZT films were made using 1-3 propanediol based precursor solution which has a high viscosity and a boiling point appropriate for thick film fabrication. In the precursor solution, Ti-propoxied and Zr-propoxied are partially substituted with acetylacetone to achieve the solution stability while maintaining reactivity. Crack free PZT films (0.8~1$\mu\textrm{m}$) have been successfully fabricated at crystallization temperatures above $700^{\circ}C$. Dielectric constants and dielectric losses of the PZT films were 900~1200and 2~5%, respectively. Piezoelectric constant $d_{33}$ of the PZT films constrained by a substrate were 200pm/V at 100kV/cm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1301-1302
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• 2007

The multilayered $Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$/$Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_{3}/Pb_{1.1}(Zr_{0.4}Ti_{0.6})O_{3}$[PZT(4060)/(6040)/(4060)] thin films were deposited by RF sputtering method on the Pt/TiO2/SiO2/Si substrate. We investigated the effects of deposition conditions on the structural and electrical properties of the multilayered PZT thin films. All the multilayered PZT thin films showed dense and homogeneous structure without the presence of the rosette structure. The dielectric properties such as dielectric constant, loss, remanent polarization of the multilayered PZT thin film were superior to those of single composition PZT(4060) and PZT(6040) films, and those values for the multilayered PZT(10/20/10) thin film were 903, 1.01% and $25.60{\mu}C/cm^2$. This study suggests that the design of the multilayered PZT thin films capacitor with tetragonal and rhombohedral phase should be an effective method to enhance the dielectric and ferroelectric performance in devices.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.191-194
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• 1997

Epitaxial Pb(Zr, Ti)O3(PZT) thin films were prepared on MgO(100) substrates by dipping-pyrolysis (DP) process using metal naphthenates as starting materials, and effects of pyrolysis and final heat-treatment conditions on the film's orientation were investigated. Solid-state epitaxial growth of PZT proceeds at lower temperature around 650℃ from the precursor pyrolyzed at 350 and 500℃. The in-plane alignment of the PZT films depends not only on the final heat-treatment temperature but on the pyrolysis conditions; the films, pyrolyzed at a higher temperature for a short time, i.e., at 500℃ for 10 min, exhibited stronger orientation after the same final heat treatment at 650°∼750℃. The PZT films with the strongest orientation were prepared by pyrolysis under the above conditions followed by final heat treatment at 750℃.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• 한국세라믹학회지
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• 제42권2호
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• pp.104-109
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• 2005

PbO 완충층의 역할을 확인하기 위해, r.f. magnetron sputtering법을 이용하여 p-type (100) Si 기판 위에 $Pt/Pb_{1.1}Zr_{0.53}Ti_{0.47}O_{3}$와 PbO target으로 Pt/PZT/PbO/Si의 MFIS 구조를 제조하였다. MFIS 구조에 완충층으로 PbO를 삽입함으로써 PZT 박막의 결정성이 크게 향상되었고, 박막의 공정온도도 상당히 낮출 수 있었다. 그리고 XPS depth profile 분석 결과, PbO 증착시 기판온도가 PbO와 Si의 계면에서 Pb의 확산에 미치는 영향을 확인하였다. PbO 완충층을 삽입한 MFIS는 높은 메모리 윈도우와 낮은 누설전류 밀도를 가지는 추수한 전기적 특성을 나타내었다. 특히, 기판온도 $300^{\circ}C$에서 증착된 PbO를 삽입한 Pt/PZT(200nm, $400^{\circ}C)PbO(80nm)/Si$는 9V의 인가전압에서 2.OV의 가장 높은 메모리 윈도우 값을 나타내었다.