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http://dx.doi.org/10.4313/JKEM.2005.18.4.327

Effect of the Hydrogen Annealing on the Pb(Zr0.52Ti0.48)O3 Film using (Pb0.72La0.28)Ti0.94O3 Buffers  

Lee, Eun-Sun (연세대학교 전기전자공학과)
Li, Dong-Hua (연세대학교 전기전자공학과)
Chung, Hyun-Woo (연세대학교 전기전자공학과)
Lim, Sung-Hoon (연세대학교 전기전자공학과)
Lee, Sang-Yeol (연세대학교 전기전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.4, 2005 , pp. 327-329 More about this Journal
Abstract
Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃(PZT) thin films were deposited by using a pulsed laser deposition method on a Pt/Ti/SiO₂/Si substrate with (Pb/sub 0.72/La/sub 0.28/)Ti/sub 0.93/O₃ (PLT) buffer and on a Pt/Ti/SiO₂/Si substrate without buffer. These films were annealed in H₂-contained ambient for 30 minutes at the substrate temperature of 400。C to evaluate the forming gas annealing effects. The comparative studies on the ferroelectric properties of these two films were carried out, which are shown that ferroelectric properties, such as remanent polarization didn't change in the case of PLT buffered PZT film while remanent polarization value of PZT film degraded from 20.8 C/㎠ to 7.3 C/㎠. The leakage current became higher in both cases, but that of the more-oriented PZT film had the moderate value of the 10/sup -6/ order of A/㎠. This is mainly because the hydrogen atoms which make the degradation of PZT films cannot infiltrate into the more -oriented PZT film as well as the less-oriented PZT film.
Keywords
PZT; Hydrogen annealing; Orientation; Buffer;
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