• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.3
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• pp.362-367
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• 2012

Though a micro pump is a crucial element in miniaturized bio-fluidic systems or drug delivery systems, most of the conventional micro pumps still have some limitations to miniaturize their controller system and to obtain the sufficient back pressure which can rise over the inner pressure of human body or experimental animals. In this paper, to overcome these limitation, a new PZT disc and its controller were designed and fabricated to get the sufficient flowrate and the back pressure with guaranteeing embeddability of the controller into pumping body. The amplitudes of the disc deflections were as large as 40 ${\mu}m$ at 200 V - 100 Hz condition. As results of experiments, the flow rate and the back pressure increase when the frequency increases. The obtainable maximum flow rate and back pressure are 5.2 ml/min at 95 Hz and 13.14 kPa at 90 Hz respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.205-205
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• 2008

PZT 세라믹은 우수한 유전 및 압전특성을 갖고 있어 변압기, 센서 및 엑츄에이터 등에 널리 응용되고 있다. 그러나, 우수한 특성에도 불구하고 PZT세라믹스의 소결시 PbO의 높은 유독성 및 휘발로 인하여 환경오염을 야기 시킨다. 그러므로 PbO로 구성된 세라믹을 대체하기 위한 우수한 압전특성을 가진 비납계 세라믹스 개발이 연구의 주류를 이루고 있다. 그 중 비납계 NKN와 BZT는 대체물질로 많이 관심을 받고 있다. 이는 일반적인 NKN조성은 우수한 압전성과 높은 큐리온도를 가지고 있을 뿐만 아니라, BZT조성의 Zr성분이 큐리온도를 낮추거나 유전특성을 졸게 하여 유전율 곡선을 완화하게 하는 특징이 있다. 하지만 NKN은 $1140^{\circ}C$이상의 소결온도에서 K의 휘발특성으로 인해 소성 후에도 주변의 수분을 흡수하는 조해성이 발생하는 문제가 발생한다. 그래서 본 연구에서는 낮은 온도에서 NKN계 세라믹스의 밀도를 증가시킬 뿐만 아니라, 우수한 유전 및 압전특성을 갖는 세라믹스를 제조하고자 비납계 $0.94(K_{0.5}Na_{0.5})NbO_3-0.06Ba(Zr_{0.05}Ti_{0.95})O_3$ (NKN-BZT)의 조성을 사용하였고 소결조제로는 $MnO_2$, NiO, $Bi_2O_3$, ZnO, $Li_2CO_3$, CuO등을 변화주어 유전 및 압전 특성을 알아보았다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.796-801
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• 2001

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the solid-state reaction method, and especially PZT(90/10) and PZT(10/90) powders were derived by the sol-gel method. All specimens showed a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increased in sintering temperature, the values for the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 14.4$\mu$m and 9.8$\mu$m, respectively. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247. 2.06%, respectively. The coercive field and the remanent polarization of x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 8.5kV/cm, 13$\mu$C/$\textrm{cm}^2$ and 17.2kV/cm, 28 $\mu$C/$\textrm{cm}^2$, respectively. The pyroelectric coefficient of the x=0.65 and x=0.85 specimens sintered at 125$0^{\circ}C$ were 5.64$\times$10$^{-8}$ C/$\textrm{cm}^2$K and 2.76$\times$10$^{-8}$ C/$\textrm{cm}^2$K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.543-546
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• 2000

Ferroeleclric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4$\mu$m. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.06%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively. The pyroelectric coefficient of the x=0.65 specimen sintered at 125$0^{\circ}C$ was 5.64$\times$10$^{-8}$ C/cm$^2$K, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.492-496
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• 2004

In this study, (0.96 －x)(PSN-PZT)－xBF－0.04 PNW＋0.3wt%MnO$_2$＋0.6wt%CuO ceramics were fabricated with the variations of the amount of BiFeO$_3$substitution and sintering temperature for the development of modified ceramics which can be sintered in the low temperature($\leq$100$0^{\circ}C$ ), and their microstructural, dielectric and piezoelectric characteristics were investigated. As the amount of BiFeO$_3$ substitution was increased, the density, mechanical quality factor(Q$_{m}$) and electromechanical coupling factor(k$_{p}$) showed the maximum value at each of sintering temperature. At sintering temperature of 98$0^{\circ}C$ and BiFeO$_3$substitution of 2 mol%, the density, dielectric constant and electromechanical coupling factor(k$_{p}$) showed the maximum value of 7.84 g/㎤, 1415 and 0.49, respectively. And at sintering temperature of 95$0^{\circ}C$ and BiFeO$_3$substitution of 3mol%, mechanical quality factor showed the maximum value of 1062. 1062.

• Electrical & Electronic Materials
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• v.5 no.1
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• pp.14-27
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• 1992

핫프레스법으로 제작된 0.05Pb(M $n_{1}$3/N $b_{2}$3/) $O_{3}$+ 0.95Pb(Z $r_{0.47}$ $Ti_{0.53}$) $O_{3}$ 세라믹스에 있어서 C $r_{2}$ $O_{3}$의 첨가량이 그 시편의 구조적특성, 유전특성, 압전특성, 온도안정성 및 포아손비에 미치는 영향이 조사되었다. C $r_{2}$ $O_{3}$의 첨가량의 범위가 0.3~0/75[wt%]인 시편만이 포아손비가 1/3이상으로 주파수저하형 에너지포획소자의 기판으로 사용될 수 있으며 이 중에서 C $r_{2}$ $O_{3}$의 첨가량이 0.5[wt%]인 시편이 보다 우수한 압전특성과 안정된 주파수 온도특성을 갖고 있다. 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.795-800
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• 2003

The dielectric and piezoelectric properties of the xPb(A $l_{0.5}$N $b_{0.5}$) $O_3$-(1-x)Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_3$ [xPAN-(1-x)PZT] thin films by pulsed laser deposition (PLD) were investigated as a function of PAN contents. The effect of texture on dielectric and piezoelectric properties of the 0.05PAN-0.95PZT thin films having the highest piezoelectric constant( $d_{33}$) was studied more precisely. For 0$\leq$x$\leq$0.15 compositions in xPAN-(1-x)PZT thin films, the well-developed perovskite phase with (111) preferred orientation was obtained at the deposition temperature of 50$0^{\circ}C$. With increasing PAN content, remanent polarization and coercive field decreased. The dielectric constant increased with an increase of PAN content until it reached 1450 at $\chi$= 0.05, and then decreased for higher PAN content. The maximum points of dielectric constant coincides with the maximum points of the piezoelectric constant $d_{33}$.33/.33/././.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.589-598
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• 1997

The effects of PT/PZ ratio variations in a modified PZT system on crystal structure and electrical properties were studied. $0.05Pb(Sn_{0.5}Sb_{0.5})O_3＋xPbTiO_3＋yPbZrO_3$＋0.4Wt% $MnO_2$(＝0.55PSS＋0.11PT＋0.84PZ＋0.4wt%$MnO_2$ ; x＋y=0.95) systems with variations of PT/PZ from 0.50/0.45 to 0.l1/0.84 were sintered at $1250^{\circ}C$ for 2 hr, and then sintering density, crystal structure, dielctric, piezoelectric, pyroelectic and voltage responsity to infrared were investigated. Sintering density was increased from 7.52g/$\textrm {cm}^3$ to 7.82g/$\textrm {cm}^3$ with increasing PZ content. Dielectric constants at 1 KHz were decreased from 1147 to 193 with variation of PT/PZ from 0.50/0.45 to 0.l1/0.84 after poling of $4 KV_{DC}$/mm at $140^{\circ}C$ for 20 minutes. All Dielectric losses at 1 KHz were less than 1 % in all specimens. $K_{p}$ was increased near to 1 of PT/PZ, and maximun value of 48.2 % was .at 0.45/0.50. Pyroelectric coefficient of PT/PZ with 0.l1/0.84 was maximun value, 0.0541 C/$\m^2$K, and voltage responsity to infrared was 1.5 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.764-767
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• 2004

This study was to measure the minuteness structure, dielectric properties of (0.3-x)PMN - XPSS-0.7PZT+0.5wt%NiO+0.5wt%$MnO_2$(x=0.05, 0.10, 0.15, 0.20, 0.25)ceramics according to sintering temperature and PSS moi percentage after manufacturing the specimens with a general method. the results of this study were gotten such as follows. The crystal structure of ceramic has the rombohedral structure in XRD. it appeared that addition of Ni, Mn additive was helpful to the formation of stable structure. Dielectric constant at $20^{\circ}C$ showed its maximum value 890.001 in specimens sintered at $1000^{\circ}C$, x=0.15mol. and dielectric loss showed its minimum value 6.95[%] in specimens sintered at $1000^{\circ}$, x=0.05mol. The variation rate of dielectric constant according to the change of frequency was decreased by increasing frequency, The variation rate of dielectric constant according to the change of temperature was increased by increasing temperature.

• Transactions on Electrical and Electronic Materials
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• v.5 no.2
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• pp.76-80
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• 2004

Piezoelectric and dielectric properties as functions of x and y mole ratio in yPb(ZrxTil-x)O$_3$(1-y)Pb(Mn$\_$1/3/Nb/2/3/)O$_3$, ceramics, PZT-PMN, are investigated for large displacement piezoelectric devices. From the experimental results, when y is 0.95 and x is 0.505, the piezoelectric and dielectric properties are maximum, that is, electromechanical coupling coefficient(kp), piezoelectric strain constant(d$\_$33/), permittivity($\varepsilon$$\_$33/$\^$T//$\varepsilon$$\_$0/), and Curie temperature are 58 %, 272 pC/N, 1520 and about 350$^{\circ}C$, respectively. Also, when y is 0.90 and x is 0.50, their properties are 56 %, 242 pC/N, 1220, and 290$^{\circ}C$, respectively. As MgO dopant is added from 0 wt% to 1 wt%, kp increases to 63 % and Qm decreases to 500 at the MgO dopant of 0.1 wt%, and then kp decreases to 57 % as MgO is added.