• Journal of the Korean Electrochemical Society
• /
• v.10 no.2
• /
• pp.82-87
• /
• 2007

New porous separators based on non-polyolefin materials including the blend of poly (vinyl chloride) (PVC)/poly (vinylidene fluoride-co-hexafluoropropylene) (P(VdF-co-HFP)/poly(methyl methacrylate) (PMMA), and the porous separator based on poly (vinylidene fluoride) (PVdF) were prepared by phase inversion method. The porosity and morphology were controlled with phase inversion rate, which is governed by the relative content of non-solvent and solvent in coagulation bath. To enhance tensile strength, the solvent pre-evaporation and uni-axial stretching processes were applied. The ionic conductivity was increased with increasing stretching ratio, and tensile strength was increased with increasing solvent pre-evaporation time and stretching ratio. The 200% stretched PVdF separator showed 56 MPa of tensile strength, and the ionic conductivity of the stretched PVdF separator was $8.6{\times}10^{-4}\;S\;cm^{-1}\;at\;25^{\circ}C$.

• Journal of the Korean Ceramic Society
• /
• v.39 no.8
• /
• pp.807-811
• /
• 2002

In this work, we investigated the deposition behavior of Mo/Si multilayer thin film structures simulated by a PVD process simulator based on Monte Carlo method to assist the optimized fabrication of the high quality mask in EUVL(Extreme Ultra-Violet Lithography) process. The shape of simulated thin film structures turned out to be largely dependent on the gas pressure(1∼30 mTorr), the target-substrate distance(1∼30 cm) and the diffusion length(1∼10 nm). From the simulation studies, it was predicted that relatively uniform thin film structures can be fabricated by decreasing gas pressure and increasing the target-substrate distance.

• Journal of the Korean Geosynthetics Society
• /
• v.17 no.4
• /
• pp.239-249
• /
• 2018

Typically, soft clay improvement is carried out using installation of PVD and surcharge method. According to circumstances, installed PVD has left for a long time due to the change in construction schedule. Therefore, for simulation of this kind of condition, discharge capacity tests were carried out under a series of temperature condition (30, 35, $40^{\circ}C$). The results indicated that under water confinement, the discharge capacities significantly reduced with elapsed time. And, the empirical equation by Miura and Chai (2000) was used for estimating the long-term in-clay discharge capacity. Based on the test results, it is recommended that in term of long-term discharge capacity, Miura and Chai's equation and reliability evaluation using discharge capacity tests under a series of temperature condition may be used.

• Transactions of Materials Processing
• /
• v.31 no.1
• /
• pp.11-16
• /
• 2022

In this paper, wear characteristics of PVD coatings were compared on the die surface for cold stamping of MART1470 steel sheet with the finite element analysis and the pin-on-disc wear test. Three types of PVD coatings (CrN, TiAlCrN, and MoS2TiCr(W)N) were considered for the tool surface made of STD11 material. The stamping process of an auto-body part was analyzed with the finite element method. Ranges of process variables for the wear test such as contact pressure, relative speed, and sliding distance were predicted from analysis results. In order to quantitatively analyze wear characteristics of each coating, the amount of wear was measured and compared according to process variables with the pin-on-disc wear test. The influence of each process variable was investigated and the wear characteristics of the three coating layers were quantitatively compared. It was confirmed that the wear characteristics of MoS₂TiCr(W)N coating were better than those of CrN and TiAlCrN. It was noted that the proposed prediction approach could predict and respond to the wear phenomenon occurring in the stamping process.

• Membrane Journal
• /
• v.18 no.1
• /
• pp.84-93
• /
• 2008

Poly(vinylidene fluoride) has received much attention in the last several years for the lithium secondary batteries. In this study, to enhance the porosity, PVdF was prepared by phase inversion method using as an additive, PEG (poly(ethylene glycol)), with N,N-dimethylformamid as a solvent. The pores are generated during the solvent and non-solvent exchange process in the coagulation bath filled with non-solvent (distilled water). The surface and cross-section of the membranes were observed with a scanning electron microscopy (SEM). The mechanical property of the membrane was determined by using an universal testing machine (UTM) and thermal property was verified by heat shrinkage. Uniformed sponge structure of PVdF-PEG membrane for the lithium secondary batteries was prepared with 10 wt% of PEG concentration in the PVdF-PEG solution. Porosity, elongation and tensile strengh of the membrane were 87%, 75.45%, and 275. 27 MPa respectively.

• Journal of the Korean institute of surface engineering
• /
• v.46 no.6
• /
• pp.258-263
• /
• 2013

4 mol% Yttria-stabilized zirconia (4YSZ) coatings are fabricated by Air Plasma Spray (APS) and Electron Beam Physical Vapor Deposition (EB-PVD) with top coating of thermal barrier coating (TBC). NiCrAlY based bond coat is prepared as 150 ${\mu}m$ thickness by conventional APS (Air Plasma Spray) method on the NiCrCoAl alloy substrate before deposition of top coating. Each 4YSZ top coating shows different tribological behaviors based on the inherent layer structures. 4YSZ by APS which has splat-stacked structure shows lower friction coefficient but higher wear rate than 4YSZ by EB-PVD which has columnar structure. For 4YSZ by APS, such results are expected due to the sliding wear accompanied with local delamination of splats.

• Macromolecular Research
• /
• v.10 no.5
• /
• pp.253-258
• /
• 2002

The multi-wall carbon nanotubes (MWNTs) with graphite crystal structure were synthesized by the catalytic decomposition of a ferrocene-xylene mixture in a quartz tube reactor to use as the conductive filler in the binary polymer matrix composed of poly(vinylidene fluoride) (PVdF) and poly(vinyl pyrrolidone) (PVP) for the EMI (electromagnetic interference) shielding applications. The yield of MWNTS was significantly dependent on the reaction temperature and the mole ratio of ferrocene to xylene, approaching to the maximum at 800 $^{\circ}C$ and 0.065 mole ratio. The electrical conductivity of the MWNTs-filled PVdF/PVP composite proportionally depended on the mass ratio of MWNTs to the binary polymer matrix, enhancing significantly from 0.56 to 26.7 S/cm with the raise of the mass ratio of MWNTs from 0.1 to 0.4. Based on the higher electrical conductivity and better EMI shielding effectiveness than the carbon nanofibers (CNFs)-filled coating materials, the MWNTs-filled binary polymer matrix showed a prospective possibility to apply to the EMI shielding materials. Moreover, the good adhesive strength confirmed that the binary polymer matrix could be used for improving the plastic properties of the EMI shielding materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.11
• /
• pp.1241-1245
• /
• 2004

Continuous physical vapor deposition (PVD) method is one of many processes to fabricate long length coated conductor which is required for successful large-scale application of superconducting power devices. Three film deposition systems (pulsed laser deposition, sputtering, and evaporation) equipped with reel-to-reel(R2R) metal tape moving apparatus were installed and used to deposit multi-layer oxide thin films. Both RABiTS and IBAD texture templates are used. IBAD template consists of CeO$_2$(PLD)/YSZ(IBAD) on stainless steel(SS) metal tape, and RABiTS template has the structure of CeO$_2$/YSZ/Y$_2$O$_3$ which was continuously deposited on Ni-alloy tape using R$_2$R evaporation and DC reactive sputtering in a deposition system designed to do both processes. 0.4 m-long coated conductor with Ic(77 K) of 34 A/cm was fabricated using RABiTS template. 0.5 m and 1.1 m-long coated conductor with Ic(77 K) of 41 A/cm and 26 A/cm were fabricated using IBAD template.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.132-132
• /
• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.176-176
• /
• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.