• Journal of the Korean Ceramic Society
• /
• v.44 no.1 s.296
• /
• pp.18-22
• /
• 2007

The phase transition behavior of $Ge_2Sb_2Te_5$ (GST) thin film, which is a candidate material of recording layer for phase change random access memory (PRAM), has been evaluated using an in-situ reflectance measurement method. The experimental data have been analyzed by using johnson-mehl-avrami-kolomogorov (JMAK) model. JMAK model can be used only in isothermal state. However, temperature changes with time during the operation of PRAM. To apply JMAK equation to PRAM simulation, it has been assumed that the temperature increases stepwise and isothermally. By using JMAK equation and assumption for the transient state, the phase transition behavior of GST thin film has been predicted under $3^{\circ}C/min$ heating rate in this study. The simulation result agrees well with the experimental results. Therefore, It can be concluded that JMAK equation can be used far the PRAM simulation model.

• Journal of KIISE:Computer Systems and Theory
• /
• v.26 no.10
• /
• pp.1258-1263
• /
• 1999

본 논문에서는 CRCW(Concurrent Read Concurrent Write)와 CREW(Concurrent Read Exclusive Write) PRAM(Parallel Random Access Machine) 모델에서 무방향성 그래프 G=(V, E)의 극대 매칭을 구하기 위해 간결한 랜덤 병렬 알고리즘을 제안한다. CRCW PRAM 모델에서 m개의 선을 가진 그래프에 대해, 제안된 매칭 알고리즘은 m개의 프로세서 상에서 {{{{ OMICRON (log m)의 기대 수행 시간을 가진다. 또한 CRCW 알고리즘을 CREW PRAM 모델에서 구현한 CREW 알고리즘은 OMICRON (log^2 m)의 기대 수행 시간을 가지지만,OMICRON (m/logm) 개의 프로세서만을 가지고 수행될 수 있다.Abstract This paper presents simple randomized parallel algorithms for finding a maximal matching in an undirected graph G=(V, E) for the CRCW and CREW PRAM models. The algorithm for the CRCW model has {{{{ OMICRON (log m) expected running time using m processors, where m is the number of edges in G We also show that the CRCW algorithm can be implemented on a CREW PRAM. The CREW algorithm runs in {{{{ OMICRON (log^2 m) expected time, but it requires only OMICRON (m / log m) processors.

• Journal of applied mathematics & informatics
• /
• v.5 no.2
• /
• pp.427-432
• /
• 1998

When an undirected tree T and a vertex ${\gamma}$ in the tree are given the problem to transform T into a rooted tree with ${\gamma}$ as its root is considered. Using Euler tour and prefix sum an optimal algorithm has been developed [2,3]. We will present another parallel algorithm which is optimal also on EREW PRAM. Our approach resuces the given tree step by step by pruning and pointer jumping. That is the tree structure is retained during algorithm processing such that than other tree computations can be carried out in parallel.

• Journal of KIISE:Computer Systems and Theory
• /
• v.33 no.7
• /
• pp.448-453
• /
• 2006

We extend a parallel depth-first search (DFS) algorithm for planar graphs to deal with (non-planar) solid grid graphs, a subclass of non-planar grid graphs. The proposed algorithm takes time O(log n) with $O(n/sqrt{log\;n})$ processors in Priority PRAM model. In our knowledge, this is the first deterministic NC algorithm for a non-planar graph class.

• The Transactions of the Korea Information Processing Society
• /
• v.1 no.3
• /
• pp.290-298
• /
• 1994

In this paper we propose parallel sorting algorithm, taking 0( $n^{n}$ log n) time complexity, 0( $n^{x}$ log n) cost (parallel running time * number of processors) and 0( $n^{1-}$x＋ $n^{x}$ )data movement complexity under the ERWW- PRAM model. The methods for solving these problems similar. Parallel algorithm finds pivot for partitioning the data into ordered subsets of approximately equal size by using encording pointers..

• Journal of applied mathematics & informatics
• /
• v.17 no.1_2_3
• /
• pp.1-23
• /
• 2005

The shortest-paths problem is a fundamental problem in graph theory and finds diverse applications in various fields. This is why shortest path algorithms have been designed more thoroughly than any other algorithm in graph theory. A large number of optimization problems are mathematically equivalent to the problem of finding shortest paths in a graph. The shortest-path between a pair of vertices is defined as the path with shortest length between the pair of vertices. The shortest path from one vertex to another often gives the best way to route a message between the vertices. This paper presents an $O(n^2)$ time sequential algorithm and an $O(n^2/p+logn)$ time parallel algorithm on EREW PRAM model for solving all pairs shortest paths problem on circular-arc graphs, where p and n represent respectively the number of processors and the number of vertices of the circular-arc graph.

• Transactions on Electrical and Electronic Materials
• /
• v.9 no.6
• /
• pp.223-226
• /
• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were processed bye-beam evaporator systems and RF-sputtering systems. Phase change characteristics were analyzed by measuring glassification temperature, crystallization temperature and density of bulk material. The thermal characteristics were measured at the temperature between 300 K and 700 K, and the electrical characteristics were studied within the range from 0 V to 3 V. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• Journal of applied mathematics & informatics
• /
• v.6 no.1
• /
• pp.279-289
• /
• 1999

Given n points in the plane the planar convex hull prob-lem in that of finding which of these points belong to the perimeter of the smallest convex region (a polygon) containing all n points. Here we suggest two kinds of methods. First we present a new sequential method for constructing the pla-nar convex hull O(1.5n) time in the quadratic decision tree model. Second using the sequential method we suggest a new parallel algo-rithm which solve the planar convex hull O(1.5n/p) time on a maspar Machine (CREW-PRAM) with O(n) processors. Also when we run on a maspar Machine we achieved a 37. 156-fold speedup with 64 pro-cessor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.33-34
• /
• 2008

$Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were prepared by e-beam evaporator system and thermal evaporator technique. The thermal properties were investigated in the temperature range 300K-400K and the electrical properties were studied in the voltage range from 0V to 3V below the corresponding glass trasition temperature. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.403-404
• /
• 2013

최근 scaling down의 한계에 부딪힌 DRAM과 Flash Memory를 대체하기 위한 차세대 메모리(Next Generation Memory)에 대한 연구가 활발히 진행되고 있다. ITRS (international technology roadmap for semiconductors)에 따르면 PRAM (phase change RAM), RRAM (resistive RAM), STT-MRAM (spin transfer torque magnetic RAM) 등이 차세대 메모리로써 부상하고 있다. 그 중 RRAM은 간단한 구조로 인한 고집적화, 빠른 program/erase 속도 (100~10 ns), 낮은 동작 전압 등의 장점을 갖고 있어 다른 차세대 메모리 중에서도 높은 평가를 받고 있다 [1]. 현재 RRAM은 주로 금속-산화물계(Metal-Oxide) 저항 변화 물질을 기반으로 연구가 활발하게 진행되고 있다. 하지만 근본적으로 공정 과정에서 산소에 의한 오염으로 인해 수율이 낮은 문제를 갖고 있으며, Endurance 및 Retention 등의 신뢰성이 떨어지는 단점이 있다. 따라서, 본 연구진은 산소 오염에 의한 신뢰성 문제를 근본적으로 해결할 수 있는 다양한 금속-질화물(Metal-Nitride) 기반의 저항 변화 물질을 제안해 연구를 진행하고 있으며, 우수한 열적 안정성($>450^{\circ}C$, 높은 종횡비, Cu 확산 방지 역할, 높은 공정 호환성 [2] 등의 장점을 가진 WN 박막을 저항 변화 물질로 사용하여 저항 변화 메모리를 구현하기 위한 연구를 진행하였다. WN 박막은 RF magnetron sputtering 방법을 사용하여 Ar/$N_2$ 가스를 20/30 sccm, 동작 압력 20 mTorr 조건에서 120 nm 의 두께로 증착하였고, E-beam Evaporation 방법을 통하여 Ti 상부 전극을 100 nm 증착하였다. I-V 실험결과, WN 기반의 RRAM은 양전압에서 SET 동작이 일어나며, 음전압에서 RESET 동작을 하는 bipolar 스위칭 특성을 보였으며, 읽기 전압 0.1 V에서 ~1 order의 저항비를 확보하였다. 신뢰성 분석 결과, $10^3$번의 Endurance 특성 및 $10^5$초의 긴 Retention time을 확보할 수 있었다. 또한, 고저항 상태에서는 Space-charge-limited Conduction, 저저항 상태에서는 Ohmic Conduction의 전도 특성을 보임에 따라 저항 변화 메카니즘이 filamentary conduction model로 확인되었다 [3]. 본 연구에서 개발한 WN 기반의 RRAM은 우수한 저항 변화 특성과 함께 높은 재료적 안정성, 그리고 기존 반도체 공정 호환성이 매우 높은 강점을 갖고 있어 핵심적인 차세대 메모리가 될 것으로 기대된다.