• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.103-104
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• 2006

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the reset current and temperature profile of PRAM cells with bottom electrode were calculated by the numerical method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.69-70
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• 2006

A detailed Investigation of cell structure and electrical characteristic in chalcogenide-based phase-change random access memory(PRAM) devices is presented. We used compound of Ge-Sb-Te material for phase-change cell. A novel bottom electrode structure and manufacture are described. We used heat radiator structure for improved reset characteristic. A resistance change measurement is performed on the test chip. From the resistance change, we could observe faster reset characteristic.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Journal of applied mathematics & informatics
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• 제5권2호
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• pp.427-432
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• 1998

When an undirected tree T and a vertex ${\gamma}$ in the tree are given the problem to transform T into a rooted tree with ${\gamma}$ as its root is considered. Using Euler tour and prefix sum an optimal algorithm has been developed [2,3]. We will present another parallel algorithm which is optimal also on EREW PRAM. Our approach resuces the given tree step by step by pruning and pointer jumping. That is the tree structure is retained during algorithm processing such that than other tree computations can be carried out in parallel.

• 한국세라믹학회지
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• 제42권5호
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• pp.326-332
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• 2005

Phase transformation effects on mechanical properties of $Ge_2Sb_2Te_5$, which is a promising candidate material for Phase Change Random Access Memory (PRAM), were studied. $Ge_2Sb_2Te_5$ thin films, which was thermally annealed with different conditions, were analyzed using XRD, AFM, 4-point probe method and reflectance measurement. As the temperature and the dwelling time increased, crystallity and grain size increased, which enhanced elastic modulus and hardness. Furthermore, N2 doping, which was used for better electrical properties, was proved to decrease elastic modulus and hardness of $Ge_2Sb_2Te_5$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1287-1288
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• 2008

In the past work, we showed that $Ge_1Se_1Te_2$ thin films provide a promising alternative for PRAM applications to overcome the problems of conventional $Ge_2Sb_2Te_5$ PRAM devices. However, $Ge_1Se_1Te_2$ thin films were unstable at SET and RESET process. Because of unstable state and its melting temperature, we alloyed As for 5wt%, 10wt% and 15wt% respectively. The phase transition temperature of $Ge_1Se_1Te_2$-only thin film is found to be 213$^{\circ}C$ while As 10wt% alloyed $Ge_1Se_1Te_2$ showed phase transition at 242$^{\circ}C$ with more stability.

• Journal of applied mathematics & informatics
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• 제12권1_2호
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• pp.21-29
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• 2003

Let G be a graph with n vertices and n edges. The problem of constructing a spanning tree is to find a connected subgraph of G with n vertices and n -1 edges. In this paper, we propose an O(log n) time parallel algorithm with O(n/ log n) processors on an EREW PRAM for constructing a spanning tree on trapezoid graphs.

• 한국정보과학회논문지:시스템및이론
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• 제33권12호
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• pp.880-884
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• 2006

각 에지에 무게(양수, 음수, 0 가능)가 주어진 트리에서, 경로의 에지들의 무게의 합이 비음수이면서 길이가 가장 긴 경로를 구하는 문제를 해결하고자 한다. 트리에서 가장 긴 비음수 경로를 찾는 O(n logn) 시간 직렬 알고리즘과 $O(log^2n)$ 시간과 O(n)개의 프로세서를 사용하는 CREW PRAM 병렬 알고리즘을 제시한다. 여기서, n은 트리가 가지는 노드의 수이다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.110-110
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• 2009

최근 차세대 비휘발성 메모리(NVM) 기술은 메모리의 성능과 기존의 한계점을 효과적으로 극복하며 활발한 연구를 통해 비약적으로 발전하고 있으며 특히, phase-change random access memory (PRAM)은 ferroelectric random access memory (FeRAM)과 magneto-resistive random access memory (MRAM)과 같은 다른 NVM 소자와 비교하여 기존의 DRAM과 구조적으로 비슷하고 상용화가 빠르게 진행될 수 있을 것으로 예상되는 바, PRAM에 사용되는 상변화 물질의 식각을 수행하고 X-ray photoelectron spectroscopy (XPS)를 통해 표면의 열화현상을 관찰하였다.

• 한국정보과학회논문지:시스템및이론
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• 제33권7호
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• pp.448-453
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• 2006

본 논문은 평면 그래프를 위한 병렬 depth-first search (DFS) 알고리즘 [SIAM J. Comput., 19 (1990) 678-704]을 비 평면일 (non-planar) 수 있는 grid 그래프의 한 종류인 solid grid 그래프에 대해서도 수행 가능하도록 확장된 알고리즘을 제안한다. 제안 알고리즘은 Priority PRAM 모델에서 $O(n/sqrt{log\;n})$개의 프로세서로 수행했을 때 O(log n)의 병렬 시간이 소요된다. 우리의 지식으로, 이는 비 평면 그래프를 위한 첫 번째 결정적 NC (deterministic NC) 알고리즘이다.