• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.1-6
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• 2004

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.128-128
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.866-869
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• 2001

In this study, (Ba,Sr)TiO$_3$(BST) thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP). Etching characteristics of BST thin films including etch rate and selectivity were evaluated as a function of the etching parameters such as gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 1700 $\AA$/min at Ar(90)/CF$_4$(10), 600 W/350 V and 5 mTorr. The selectivity of BST to PR was 0.6, 0.7, respectively. To analyze the composition of surface residue remaining after the etching, samples etched with different CF$_4$/Ar gas mixing ratio were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). From the results of XPS and SIMS, there are chemical reaction between Ba, Sr, Ti and C, F radicals during the etching and remained on the surface.

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.218-221
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• 1997

When phenylation of styrene was carried out in the presence of Pd(OAc)2 and PPh3 in benzene, trans-stilbene was obtained in good yield (566%) with high selectivity (98%) under mild condition (55 ℃, 50 psi O2, 20 h). Since trans-stilbene could be produced not only from benzene but also from phenyl group of PPh3 by migration of its phenyl group to Pd, the competitiveness of benzene and the migratory aptitude of aryl group of triarylphosphine toward styrene has been investigated with various phosphines (PR3: P(p-C6H4CH3)3, P(p-C6H4OCH3)3, P(p-C6H4F)3, P(p-C6H4Cl)3, P(C6H5)3, P(C6H11)3, P(OC4H9n)3, P(CH2C6H5)3 and P(C6F5)3). The yield and selectivity toward trans-stilbene are increased as the basicity of the phosphines increases. The composition of arylated olefin from arylphosphine, in turn, increases as the electronegativity of the substituent on the aryl group of arylphosphines increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.212-212
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• 2010

최근 차세대 반도체 메모리 소자로 대두된 magnetic random access memory(MRAM)에 대한 연구가 활발히 진행되고 있다. 특히 MRAM의 magnetic tunnel junction(MTJ) stack을 구성하는 자성 재료의 건식 식각에 대한 연구에서는 좋은 profile을 얻고, 재층착의 문제를 해결하기 위한 노력이 계속해서 진행되고 있다. 본 연구에서는 photoresist(PR)과 Ti 하드 마스크로 패턴 된 배리어(barrier) 층인 MgO 박막의 식각 특성을 유도결합 플라즈마를 이용한 고밀도 반응성 이온 식각(inductively coupled plasma reactive ion etching-ICPRIE)을 통해서 연구하였다. PR 및 Ti 마스크를 이용한 자성 박막들은 HBr/Ar, HBr/$O_2$/Ar 식각 가스의 농도를 변화시키면서 식각되었다. HBr/Ar 가스를 이용 식각함에 있어서 좋은 식각 조건을 얻기 위한 parameter로서 pressure, bias voltage, rf power를 변화시켰다. 각 조건에서 Ti 하드마스크에 대한 터널 배리어층인 MgO 박막에 selectivity를 조사하였고 식각 profile을 관찰하였다. 식각 속도를 구하기 위해 alpha step(Tencor P-1)이 사용되었고 또한 field emission scanning electron microscopy(FESEM)를 이용하여 식각 profile을 관찰함으로써 최적의 식각 가스와 식각 조건을 찾고자 하였다.

• Transactions of the Korean hydrogen and new energy society
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• v.23 no.6
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• pp.640-646
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• 2012

The effect of Ce promotion over 1wt% $Pt/{\gamma}-Al_2O_3$ catalysts on the CO conversion and $CO_2$ selectivity was investigated in preferential CO oxidation (PrOx) to reduce the CO concentration less than 10 ppm in excess $H_2$ stream for polymer electrolyte membrane fuel cell (PEMFC). Ce-promoted 1wt% $Pt/{\gamma}-Al_2O_3$ catalysts were prepared by incipient wetness impregnation method and the loading amount of Pt was fixed at 1wt%. The content of Ce promoter which has excellent oxygen storage and transfer capability due to the redox property was adjusted from 0 to 1.5wt%. Ce-promoted 1wt% $Pt/{\gamma}-Al_2O_3$ catalysts exhibit high CO conversion and $CO_2$ selectivity at low temperatures below $150^{\circ}C$ due to the improvement of reducibility of surface PtOx species compared with the 1wt% $Pt/{\gamma}-Al_2O_3$ catalyst without Ce addition. When Ce content was more than 1wt%, the catalytic activity was decreased at over $160^{\circ}C$ in PrOx because of competitive $H_2$ oxidation. As a result, 0.5wt% Ce is optimal content not only to achieve high catalytic activity and good stability at low temperatures below $150^{\circ}C$ in the presence of $CO_2$ and $H_2O$ but also to minimize the $H_2$ oxidation at high temperatures.

• Bulletin of the Korean Chemical Society
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• v.12 no.2
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• pp.130-137
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• 1991

The following new cryptand 221 complexes of lanthanides(Ⅲ) and dioxouranium(Ⅵ) nitrate have been synthesized: $(Ln(C_{16}H_{32}N_2O_5)(H_2O)_2(NO_3)_3\ and \((UO_2)_2(C_{16}H_{32}N_2O_5)(H_2O)_4(NO_3)_4$. These complexes have been identified by elemental analysis, moisture titration, conductivity measurements and various spectroscopic techniques. The proton and carbon-13 NMR as well as calorimetric measurements were used to study the interaction of cryptand 221 with La(Ⅲ), Pr(Ⅲ ), Ho(Ⅲ) and $UO_2(Ⅱ)$ ions in nonaqueous solvents. The bands of metal-oxygen atoms, metal-nitrogen atoms and O-U-O in the IR spectra shift upon complexation to lower frequencies, and the vibrational spectra ({\delta}NMN$) of metal-amide complexes in the crystalline state exhibit lattice vibrations below 300 $cm^{-1}$. The NMR spectra of the lanthanides(Ⅲ) and dioxouranium(Ⅵ) nitrate complexes in nonaqueous solvents are quite different, indicating that the ligand exists in different conformation, and also the $^1H$ and $^{13}C-NMR$ studies indicated that the nitrogen atom of the ring has greater affinity to metal ions than does the oxygen atom, and the planalities of the ring are lost by complexation with metal ions. Calorimetric measurements show that cryptand 221 forms more stable complexes with $La^{3+}$ and $Pr^{3+}$ ions than with $UO^{22+}$ ion, and $La^{3+}/Pr^{3+}$ and $UO^{22+}/Pr^{3+}$ selectivity depends on the solvents. These changes on the stabilities are dependent on the basicity of the ligand and the size of the metal ions. The absorption band (230-260 nm) of the complex which arises from the direct interaction of macrocyclic donor atoms with the metal ion is due to n-{\delta}*$ transition and also that (640-675 nm) of $UO^{22+}$-cryptand 221 complex, which arises from interaction between two-dioxouranium(Ⅵ) ions in being out of cavity of the ligand ring is due to d-d* transition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.305-310
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• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.773-776
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• 2009

In this paper, new concept of the diesel fuel processing is introduced for the stable operation of solid oxide fuel cells (SOFCs). Heavier hydrocarbons than $CH_4$, such as ethylene, ethane, propane, and etc., induce the carbon deposition on anode of SOFCs. In the reformate of heavy hydrocarbons (diesel, gasoline, kerosene, and JP-8), concentration of ethylene is usually higher than low hydrocarbons such as ethane, propane, and butane. So, removal of low hydrocarbons (over C1-hydrocarbons), especially ethylene, at the reformate gases is important for stable operation of SOFCs. New methodology as named "post-reformer" is introduced for removing the low hydrocarbons at the reformate gas stream. Catalyst of the NECS-PR4 is selected for post-reforming catalyst because the catalyst of NECS-PR4 shows the high selectivity for removing low hydrocarbons and achieving the high reforming efficiency. The diesel reformer and post-reformer are continuously operated for about 200 hours as integrated mode. The reforming performance is not degraded and low hydrocarbons in the diesel reformate are completely removed.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.279-281
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• 1997

The properties of Platinum dry etching were investigated in MICP(Magnetized Inductively Coupled Plasma). The problem with Platinum etching is the redeposition of sputtered Platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned Platinum structure produce feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape.[1] Generally, $Cl_2$ plasma is used for the fence-free etching.[1][2][3] The main object of this study was to investigate a new process technology for the fence-free Pt etching. Platinum was etched with Ar plasma at the cryogenic temperature and with Ar/$SF_6$ plasma at room temperature. In cryogenic etching, the height of fence was reduced to 20% at $-190^{\circ}C$ compared with that of room temp., but the etch profile was not fence-free. In Ar/$SF_6$ Plasma, chemical reaction took part in etching process. The trend of properties of Ar/$SF_6$ Plasma etching is similar to that of $Cl_2$ Plasma etching. Fence-free etching was possible, but PR selectivity was very low. A new gas chemistry for fence-free Platinum etching was proposed in this study.