• 제목/요약/키워드: PNP

검색결과 122건 처리시간 0.039초

PMOS 트랜지스터의 ESD 손상 분석 (ESD Failure Analysis of PMOS Transistors)

  • 이경수;정고은;권기원;전정훈
    • 대한전자공학회논문지SD
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    • 제47권2호
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    • pp.40-50
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    • 2010
  • 본 논문은 미세 CMOS 공정의 PMOS 트랜지스터에 높은 전류가 인가될 때 발생하는 기생 PNP 바이폴라 트랜지스터의 스냅백과 breakdown 동작에 초점을 맞춘다. $0.13\;{\mu}m$ CMOS 공정을 이용해 제작한 다양한 I/O 구조를 분석함으로써 PMOSFET의 ESD 손상 현상의 원인을 규명하였다. 즉, 인접한 다이오드로부터 PMOSFET의 바디로 전하가 주입됨으로써 PMOSFET의 기생 PNP 트랜지스터가 부분적으로 turn-on되는 현상이 발생하여 ESD에 대한 저항성을 저하시킨다. 2차원 소자 시뮬레이션을 통해 레이아웃의 기하학적 변수의 영향을 분석하였다. 이를 기반으로 새로운 PMOSFET ESD 손상을 방지하는 설계 방법을 제안한다.

Construction and immunization with double mutant ΔapxIBD Δpnp forms of Actinobacillus pleuropneumoniae serotypes 1 and 5

  • Dao, Hoai Thu;Truong, Quang Lam;Do, Van Tan;Hahn, Tae-Wook
    • Journal of Veterinary Science
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    • 제21권2호
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    • pp.20.1-20.13
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    • 2020
  • Actinobacillus pleuropneumoniae (APP) causes a form of porcine pleuropneumonia that leads to significant economic losses in the swine industry worldwide. The apxIBD gene is responsible for the secretion of the ApxI and ApxII toxins and the pnp gene is responsible for the adaptation of bacteria to cold temperature and a virulence factor. The apxIBD and pnp genes were deleted successfully from APP serotype 1 and 5 by transconjugation and sucrose counter-selection. The APP1ΔapxIBDΔpnp and APP5ΔapxIBDΔpnp mutants lost hemolytic activity and could not secrete ApxI and ApxII toxins outside the bacteria because both mutants lost the ApxI- and ApxII-secreting proteins by deletion of the apxIBD gene. Besides, the growth of these mutants was defective at low temperatures resulting from the deletion of pnp. The APP1ΔapxIBDΔpnp and APP5ΔapxIBDΔpnp mutants were significantly attenuated compared with wild-type ones. However, mice vaccinated intraperitoneally with APP5ΔapxIBDΔpnp did not provide any protection when challenged with a 10-times 50% lethal dose of virulent homologous (APP5) and heterologous (APP1) bacterial strains, while mice vaccinated with APP1ΔapxIBDΔpnp offered 75% protection against a homologous challenge. The ΔapxIBDΔpnp mutants were significantly attenuated and gave different protection rate against homologous virulent wild-type APP challenging.

병합트랜지스터를 이용한 고속, 고집적 ISL의 설계 (Design of a high speed and high intergrated ISL(Intergrated Schottky Logic) using a merged transistor)

  • 장창덕;이용재
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 1999년도 춘계종합학술대회
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    • pp.415-419
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    • 1999
  • Many bipolar logic circuit of conventional occurred problem of speed delay according to deep saturation state of vertical NPN Transistor. In order to remove minority carries of the base region at changing signal in conventional bipolar logic circuit, we made transistor which is composed of NPN transistor shortened buried layer under the Base region, PNP transistor which is merged in base, epi layer and substrate. Also the Ring-Oscillator for measuring transmission time-delay per gate was designed as well. The structure of Gate consists of the vertical NPN Transistor, substrate and Merged PNP Transistor. In the result, we fount that tarriers which are coming into intrinsic Base from Emitter and the portion of edge are relatively a lot, so those make Base currents a lot and Gain is low with a few of collector currents because of cutting the buried layer of collector of conventional junction area. Merged PNP Transistor's currents are low because Base width is wide and the difference of Emitter's density and Base's density is small. we get amplitude of logic voltage of 200mv, the minimum of transmission delay-time of 211nS, and the minimum of transmission delay-time per gate of 7.26nS in AC characteristic output of Ring-Oscillator connected Gate.

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Parallel PNP 및 N+ drift가 삽입된 높은 홀딩전압특성을 갖는 ESD보호회로에 관한 연구 (A Study on ESD Protection Circuit with High Holding Voltage with Parallel PNP and N+ difrt inserted)

  • 곽재창
    • 전기전자학회논문지
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    • 제24권3호
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    • pp.890-894
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    • 2020
  • 본 논문에서는 대표적인 ESD 보호소자인 LVTSCR의 구조적 변화를 통해 높은 홀딩전압 특성을 가지는 ESD 보호소자를 제안한다. 제안된 ESD 보호소자는 병렬 PNP path와 긴 N+ drift 영역을 삽입하여 기존의 LVTSCR보다 높은 홀딩전압을 가지며, 일반적인 SCR 기반 ESD보호소자의 단점인 Latch-up 면역특성을 향상시킨다. 또한 기생 BJT들의 유효 베이스 폭을 설계변수로 설정하였으며, N-Stack 기술을 적용하여 요구되는 application에 적용할 수 있도록 시놉시스사의 TCAD 시뮬레이션을 통해 제안된 ESD 보호소자의 전기적 특성을 검증하였다.

Porosity and Liquid-phase Adsorption Characteristics of Activated Carbons Prepared From Peach Stones by $H_3PO_4$

  • Attia, Amina A.;Girgis, Badie S.;Tawfik, Nady A.F.
    • Carbon letters
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    • 제6권2호
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    • pp.89-95
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    • 2005
  • Crushed peach stone shells were impregnated with $H_3PO_4$ of increasing concentrations (30-70%) followed by heat treatment at 773 K for 3 h. Produced carbons (ACs) were characterized by $N_2$ adsorption at 77 K using the BET-equation and the ${\alpha}$-method. High surface area microporous ACs were obtained, with enhanced internal pore volume, as function of % $H_3PO_4$. Adsorption isotherms from aqueous solution were determined for methylene blue (MB) and p-nitrophenol (PNP), as representatives for dye and phenolics pollutant molecules. Application of the Langmuir model proved the high limiting capacity towards both solute molecules, MB was uptaken in increasing amounts as function of $H_3PO_4$ concentration and generated porosity. High removal of PNP was almost the same irrespective of porosity characteristics. Competitive adsorption of $H_2O$ molecules on the hydrophilic carbon surface seems to partially reduce the available area to the PNP molecules. Application of the pseudo-second order law described well the fast adsorption (${\leq}$ 120 min) at two initial dye concentrations.

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Oral Manifestation of Paraneoplastic Pemphigus

  • Kim, Seurin;Park, In Hee;Park, YounJung;Kwon, Jeong-Seung;Choi, Jong-hoon;Ahn, Hyung-Joon
    • Journal of Oral Medicine and Pain
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    • 제44권3호
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    • pp.118-122
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    • 2019
  • Paraneoplastic pemphigus (PNP) is a rare and often fatal autoimmune blistering disease accompanied by both benign and malignant neoplasms. Usually, oral, skin, and mucosal lesions are the earliest manifestations shown by PNP patients. Oral ulcers are initial lesions in various autoimmune diseases like pemphigus, bullous pemphigoid, erythema multiforme, graft-versus-host, lichen planus, it does not improved despite of high-dose steroid therapy. We report a-35-year-old female who presented oral ulceration, lip crust and skin lesions. By doing several examinations, such as enzyme-linked immunosorbent assay, incisional biopsy with indirect immunofluorescence, she was diagnosed PNP with non-Hodgkin's lymphoma on pancreas.

Implementation of PNP on the Control Board using Hardware/Software Co-design

  • Kim, Si-hwan;Lin, Chi-ho;Kim, Hi-seok
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -1
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    • pp.305-308
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    • 2002
  • This paper proposes a control board that includes PNP function with extensibility and effective allocation of allocation. The object of study is to overcome limited extensity of old systems and it is to reuse the system. The system recognizes automatic subsystem from application of main system with board level that is using hardware and software co-design method. The system has both function of main-board and sub-board. So one system can operate simultaneously such as module of alien system. This system has advantages that are fast execution, according as process functional partition to hardware/ software co-design and board size is reduced as well as offer extensity of development system. We obtained good result with control board for existent Z-80 training kit.

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고성능 Smart Power 소자 설계 및 전기적 특성에 관한 연구 (A Study on the Design and Electrical Characteristics of High Performance Smart Power Device)

  • 구용서
    • 전기전자학회논문지
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    • 제7권1호
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    • pp.1-8
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    • 2003
  • 본 논문에서는 고내압 및 고속 스위칭 특성을 갖는 고성능 BCD(Bipolar- CMOS-DMOS) 소자 구조를 고안하였다. 공정 및 소자 시뮬레이션을 통하여, 최적화된 공정 규격과 소자 규격을 설계하였으며, 고안된 소자의 전기적 특성을 만족시키기 위하여 이중 매몰층 구조, 트랜치 격리 공정, n-/p- 드리프트 영역 형성기술 및 얕은 접합 깊이 형성기술 등을 채택하였다. 이 스마트 파워 IC는 20V급 Bipolar npn/pnp 소자, 60V급 LDMOS소자, 수 암페어급의 VDMOS, 20V급 CMOS소자 그리고 5V급 논리 CMOS를 내장하고 있다.

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Inhibition of Purine Nucleoside Phosphorylase (PNP) in Micrococcus luteus by Phenylglyoxal

  • Choi, Hye-Seon
    • Journal of Microbiology
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    • 제34권3호
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    • pp.270-273
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    • 1996
  • Micrococcus luteus purine nucleoside phosphorylase (PNP) has been purified and characterized. The physical and kinetic properties have been described previously. Chemical modification of the enzyme was attempted to gain insight on the active site. The enzyme was inactivated in a time-dependent manner by the arginine- specific modifying reagent phenylglyoxal. There was a linear relationship between the observed rate of inactivation and the phenylglyoxal concentration. At 30 $^{\circ}C$ the bimolecular rate constant for the modification was 0.015 $min^{-1}mM^{-1}$ in 50 mM $NaHCO_3$ buffer, pH 7.5. The plot of logk versus log phenylglyoxal concentration was a strainght line with a slope value of 0.9, indicating that modification of one arginine residue was needed to inactivate the enzyme. Preincubation with saturated solutions of substrates protected the enzyme from inhibition of phenylglyoxal, indicating that reactions with phenylglyoxal were directed at arginyl residues essential for the catalytic functioning of the enzyme.

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