• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.188-193
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• 1997

The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using PbO-rich target with varing La contents. The substrate temperature, working pressure, $Ar/O_{2}$, and RF power density of PLT thin films were $580^{\circ}C$ 10mTorr, 10/1, and $1.7W/cm^{2}$, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above $1.71{\mu}C/cm^{2}$ and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.104-107
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• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.56-62
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• 1997

Using a rf-magnetron sputtering method, highly c-axis oriented La modified $PbTiO_{3}$ (PLT) ferroelectric thin films with compositions of $(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 361 at 1 kHz and remanent polarization(Pr) of $9{\mu}C/cm^{2}$, $8{\mu}C/cm^{2}$ and $7{\mu}C/cm^{2}$.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.1-8
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• 1996

High-sensitive pyroelectric infrared sensors have been fabricated with La-modified $PbTiO_{3}$(PLT) thin plates. The PLT thin plates have the composition of $(Pb_{0.9}La_{0.1}Ti_{0.75}O_{3})_{0.75}(PbO)_{0.25}$. Thickness of the thin plates is $100\;{\mu}m$. Top side electrodes exposed to IR are vacuum evaporated Ni-Cr, and bottom side electrodes are Ag. Each one takes the area of $1{\times}2\;mm^{2}$. The thin plates have a large resistivity of $6.41{\times}10^{10}{\Omega}{\cdot}cm$ and a relative dielectric constant of 341. They have a high figure of merit of $4.0{\times}10^{-11}\;Ccm/J$ due to its high pyroelectric coefficient of $4.45{\times}10^{-8}\;C/cm^{2}K$. The sensors show such a large voltage responsivity as 2501 V/W. That they can find practical applications like the pyroelectric infrared detectors.

• Journal of Physiology & Pathology in Korean Medicine
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• v.27 no.6
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• pp.771-781
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• 2013

This study was performed to investigate the anti-photoaging effects of Persimmon leaf tea(PLT) in hairless mice(SKH-1) exposed to UVB irradiation. The animals were divided into non-treated group (normal, N) and UV-radiated groups. UV-radiated groups were divided into only UV-radiated group(control, C) and UV-radiated and PLT treated experimental groups[first extraction treated group(PLT-I), second extraction treated group(PLT-II), and third extraction treated group(PLT-III)]. Three PLT treated experimental groups of mice were treated with both oral administration(300 mg/Kg B.W./day) and topical application (100 ul of 2% conc./mouse/day) for 4 weeks. Anti-photoaging effects of Persimmon leaf were evaluated by anti oxidative reaction, stereomicroscopic and microscopic observations. The expression of photoaging skin related factors including mast cell tryptase, proliferating cell nuclear antigen (PCNA) and vascular endothelial growth factor (VEGF) was examined by immunohistochemical staining. Treatment of PLT-I, -II, -III prevented the wrinkle formation as well as epidermal hyperplasia, inflammatory cells, disruption of collagen in photoaged skin induced by UVB radiation. It also reduced the PCNA and VEGF expression in the UVB irradiated dorsal skin. Furthermore, it significantly decreased the number of mast cells in the UVB irradiated dermis(p<0.05 and p<0.01). On the effects of oxidative stress and antioxidant function on the treatment with water extract from Persimmon leaf tea(PLT), the activity of superoxide dismutase(SOD) was significantly increased in PLT-III group(p<0.05), and catalase(CAT) was significantly increased in PLT-I and PLT-III groups(p<0.05), and PLT-II group(p<0.001). These extracts showed relatively antioxidant activity and protective effect on UVB-induced oxidative stress in hairless mice(SKH-1). Our results suggest that Persimmon leaf tea may serve as an useful radical scavenging antioxidant and anti-photoaging skin agents in the UVB irradiated skin.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.484-490
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• 1999

$(Pb,La)TiO_3$(PLT) thin films were prepared on Pt/SiO$_2$/Si substrates by the sol-gel method and investigated the crystalline and electrical properties according to La concentration and post-annealing temperatures. The PLT films annealed at above $600^{\circ}C$ were exhibited the typical perovskite structures regardless of La contents. When the $(Pb,La)TiO_3$(PT) films were doped with La concentration up to 10mol%(PLT-10), the degree of z-axis orientation was greatly decreased from 63% to 26%. From AES depth profiles for the PLT-10 samples, no remarkable inter-reaction between PLT film and lower Pt electrode was found. The remanent polarization$(2Pr,Pr_+-Pr_-)$ were increased from $4\muC\textrm{cm}^2 to 16\muC\textrm{cm}^2$ as the annealing temperature increased from $600^{\circ}C to 700^{\circ}C$. This result may be ascribed to the improvement of crystallinity by the high temperature post-annealing. The dielectric constant$({\varepsilon}r)$ and tangent loss(tan$\delta$) of the PLT-10 films annealed at $650^{\circ}C$ were about 193 and 0.02, respectively with the pyroelectric coefficient($\gamma$) of around $4.0nC/\textrm{cm}^2{\cdot}^{\circ}C at 30^{\circ}C$.

• Korean Journal of Clinical Laboratory Science
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• v.50 no.4
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• pp.399-405
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• 2018

The platelet count in clinical laboratories is essential for the diagnosis and treatment of hemostasis abnormalities, and accurate platelet counting in the low count range is of prime importance for deciding if a platelet transfusion is needed and for monitoring after chemotherapy. Quality control is designed to reduce and correct any deficiencies in the internal analytical process of a clinical laboratory prior to the release of patient results. Fragmented erythrocytes are the major confusing factors for platelet counting because of their similar size to platelets. The authors found that the low range QC values were out of 2SD with a Sysmex automatic analyzer in internal quality control process. Thus far, there has been little discussion on the relationship between hemolysis and the platelet parameters. Therefore, this study focused on the performance of automated platelet counts, including the PLT-F, the PLT-I, and PLT-O methods at the low platelet range using the low level QC materials and compared the 5 platelet parameters with the hemolyzed samples. The results showed that the CV was the smallest with PLT-F and P-LCR increased from 18.4 to 31.9% in the hemolysis samples. These results indicate that a more accurate estimation of the platelet counts can be achieved using the PLT-F method than the PLT-I method at the low platelet range. The use of the PLT-F system improves the confidence of results in low platelets samples in a routine hematology laboratory. The results suggest that P-LCR is a new parameter in assessing samples when the specimen is suspected of hemolysis and deterioration. Nevertheless, further studies will be needed to establish the relationship with P-LCR and hemolysis using human blood specimens.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.1-8
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• 2005

We fabricate PLT(5) thin film on Pt/TiO/sub x/SiO₂/Si substrate by using sol-gel method and investigate leakage current, switching and retention properties. The leakage current density of PLT(5) thin film is 3.56×10/sup -7/A/㎠ at 4V. In the examination of switching properties, pulse voltage and load resistance were 2V～5V and 50Ω～3.3kΩ, respectively. Switching time has a tendency to decrease from 0.52㎲ to 0.14㎲ with the increase of pulse voltage, and also the time increases from 0.14㎲ to 13.7㎲ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time is about 135kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching is about 10%. Also, polarization in retention decreases as much as about 8% after l0/sup 5/s.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.77-86
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• 2000

In this study effects of La starting compounds and substrates on the densification of (P $b_{0.92}$L $a_{0.05}$)Ti $O_3$ thin films were investigated. After the heat treatment on platinized silicon at $650^{\circ}C$ for 30min thickness of PLT(i) thin films (from La-isopropoxide) shrank by 27%, while 33% reduction occurred for PLT (a) thin films (from La-acetate). These PLT(i) films showed less densified surface microstructure compared to the PLT (a) . Lower shrinkage of the films on platinized silicon than on bare silicon (41% and 40% for PLT (i) and PLT (a) respectively) is attributed to the earlier development of crystallinity in the film, which arrests film densification. In order to maximize sintering before crystallization, heat treatment at $400^{\circ}C$ for 3 hours followed by $650^{\circ}C$ for 30 min was attempted. This method increased the shrinkage of the PLT (i) and PLT (a) films two times and 1.5 times as much as that observed for the films heat treated at $650^{\circ}C$ for 30min, respectively. FTIR results indicated that first pyrolysis in the film is associated with the burning of acetate ligands. Condensation reaction between OHs was found to occur preferentially between $350^{\circ}C$ and $450^{\circ}C$, whereas majority of polycondensation between ROH-OH appears to occur until $300^{\circ}C$ and be completed below $450^{\circ}C$.EX>.