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A Study on the Switching and Retention Characteristics of PLT(5) Thin Films  

Choi Joon Young (Dept. of Electronics Engineering, Inha University)
Chang Dong Hoon (Dept. of Electronics Engineering, Inha University)
Kang Seong Jun (Dept. of Semiconductor Materials & Devices Yosu National University)
Yoon Yung Sup (Dept. of Electronics Engineering, Inha University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.1, 2005 , pp. 1-8 More about this Journal
Abstract
We fabricate PLT(5) thin film on Pt/TiO/sub x/SiO₂/Si substrate by using sol-gel method and investigate leakage current, switching and retention properties. The leakage current density of PLT(5) thin film is 3.56×10/sup -7/A/㎠ at 4V. In the examination of switching properties, pulse voltage and load resistance were 2V～5V and 50Ω～3.3kΩ, respectively. Switching time has a tendency to decrease from 0.52㎲ to 0.14㎲ with the increase of pulse voltage, and also the time increases from 0.14㎲ to 13.7㎲ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time is about 135kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching is about 10%. Also, polarization in retention decreases as much as about 8% after l0/sup 5/s.
Keywords
PLT(5) thin film; switching; retention; activation energy; hysteresis;
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