• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.2
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• pp.175-180
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• 2009

In this article, we fabricated polytetrafluoroethylene(PTFE) nozzle treated by ion beam, in order to fabricate polymer based electrospray micro thruster with super hydrophobic nozzle. To obtain the super hydrophobic surface, PTFE surface is treated by argon and oxygen plasma treatment process. The optimal condition is investigated argon and oxygen flow rate as well as the paalied energy level for the treatment process. Fabricated nozzle was evaluated by measuring contact angle, and the surface morphology was examined by using scanning electron microscope(SEM) and atomic force microscope(AFM). We observe that jetting becomes more stable and repeatable on the treated nozzle. And to evaluate performance of fabricated nozzle, we measure micro scale thrust using a cantilever and a nozzle treated by ion beam laser displacement sensor.

• Korean Chemical Engineering Research
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• v.44 no.2
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• pp.160-165
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• 2006

A Pd-Cu-Ni alloyed hydrogen membrane has fabricated on porous nickel support formed by nickel powder. Porous nickel support made by sintering shows a strong resistance to hydrogen embrittlement and thermal fatigue. Plasma surface modification treatment is introduced as pre-treatment process instead of conventional HCl wet activation. Nickel was electroplated to a thickness of $2{\mu}m$ in order in to fill micropores at the nickel support surface. Palladium and copper were deposited at thicknesses of $4{\mu}m$ and $0.5{\mu}m$, respectively, on the nickel coated support by DC sputtering process. Subsequently, copper reflow at $700^{\circ}C$ was performed for an hour in $H_2$ ambient. And, as a result PdCu-Ni composite membrane has a pinhole-free and extremely dense microstructure, having a good adhesion to the porous nickel support and infinite hydrogen selectivity in $H_2/N_2$ mixtures.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.353-358
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• 2013

The hot corrosion behavior of plasma sprayed 4 mol% $Y_2O_3-ZrO_2$ (YSZ) thermal barrier coatings (TBCs) with volcanic ash is investigated. Volcanic ash that deposited on the TBCs in gas-turbine engines can attack the surface of TBCs itself as a form of corrosive melt. YSZ coating specimens with a thickness of 430-440 ${\mu}m$ are prepared using a plasma spray method. These specimens are subjected to hot corrosion environment at $1200^{\circ}C$ with five different duration time, from 10 mins to 100 h in the presence of corrosive melt from volcanic ash. The microstructure, composition, and phase analysis are performed using Field emission scanning electron microscopy, including Energy dispersive spectroscopy and X-ray diffraction. After the heat treatment, hematite ($Fe_2O_3-TiO_2$) and monoclinic YSZ phases are found in TBCs. Furthermore the interface area between the molten volcanic ash layers and YSZ coatings becomes porous with increases in the heat treatment time as the YSZ coatings dissolved into molten volcanic ash. The maximum thickness of this a porous reaction zone is 25 ${\mu}m$ after 100 h of heat treatment.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.54.2-54.2
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• 2010

최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< $1\;cm^2/Vs$)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide의 경우, band gap이 3.4eV로써, transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers 그리고 UV detectors 등의 많은 응용에 쓰이고 있다. 또한, a-Si TFTs에 비해 ZnO-based TFTs의 경우 우수한 소자 성능과 신뢰성을 나타내며, 대면적 제조시 우수한 균일성 및 낮은 생산비용이 장점이다. 그러나 ZnO-baesd TFTs의 경우 일정한 bias 아래에서 threshold voltage가 이동하는 문제점이 displays의 소자로 적용하는데 매우 중요하고 문제점으로 여겨진다. 특히 gate insulator와 channel layer사이의 interface에서의 defect에 의한 charge trapping이 이러한 문제점들을 야기한다고 보고되어진다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering을 이용하여 상온에서 제작을 하였다. 또한, $Si_3N_4$ 기판 위에 electron cyclotron resonance (ECR) $O_2$ plasma 처리와 plasma-enhanced chemical vapor deposition (PECVD)를 통하여 $SiO_2$ 를 10nm 증착을 하여 interface의 개선을 시도하였다. 그리고 TFTs 소자의 출력 특성 및 전이 특성을 평가를 하였고, 소자의 field effect mobility의 값이 향상을 하였다. 또한 Temperature, Bias Temperature stability의 조건에서 안정성을 평가를 하였다. 이러한 interface treatment는 안정성의 향상을 시킴으로써 대면적 디스플레의 적용에 비정질 실리콘을 대체할 유력한 물질이라고 생각된다.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.175-181
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• 2004

We investigated the stability of the DLC film coated on 304 stainless steel substrate by Radio frequency assisted chemical vapor deposition method. Fracture and spallation behaviour of the coating was observed during micro-tensile test of the fil $m_strate composite. As the tensile deformation progressed, the cracks of the film were observed in the perpendicular direction to the tensile axis. Further deformation resulted in the plastic deformation with $45^{\circ}$ slip bands on the substrate surface. Spallation of the film occurred with the plastic deformation, which was initiated at the cracks of the film and was aligned along the slip directions. We found that both the cracking and the spallation behaviors are strongly dependent on the pre-treatment condition, such as Ar plasma pre-treatment. The spallation of the film was considerably suppressed in an optimized condition of the substrate cleaning by Ar glow discharge. We observed the improved stability with increasing duration of Ar plasma pre-treatment.nt.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1862-1864
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• 2005

Carbon nanotubes [CNTs] are grown on TiN-coated Si substrates at $700^{\circ}C$ by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Pre-treatment of Ni catalysts has been performed using an RF magnetron sputtering system. Structural properties and field-emission characteristics of the CNTs grown are analyzed in terms of the RF power applied and the treatment time used in the pre-treatment process. The characterization using various techniques, such as FE-SEM, AFM, and Raman spectroscopy, show that the physical dimension as well as the crystal quality of CNTs are changed by pre-treatment of Ni catalysts. It is also seen that Ni catalysts with proper grain size and uniform surface roughness may produce much better electron emission. The physical reason for all the measured data obtained are discussed to establish the relationship between the structural property and the electron emission characteristic of CNTs.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.353-360
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• 2005

Surface treatment play an important role in nucleating calcium phosphate deposition on surgical Ti implant. Therefore, the purpose of this study is to examine whether the precipitation of apatite on cp-Ti and Ti alloys are affected by surface modification in HCl and $H_2O_2$ solution. Specimens were then chemically treated with a solution containing 0.1 M HCl and 8.8M $H_2O_2$ at $80^{\circ}C$ for 30 mins, and subsequently heat-treated at $400^{\circ}C$ for 1 hour. All specimens were immersed in the HBSS with pH 7.4 at $36.5^{\circ}C$ for 15 days, and the surface was examined with XRD, SEM, EDX ana XPS. Also, pure Ti, Ti-6Al-4V and Ti-6Al-7Nb alloy specimens with and without surface treatment were implanted in the abdominal connective tissue of mice for 4 weeks. All specimens chemically treated with HCl and $H_2O_2$ solution have the ability to form a apatite layer in the HBSS which has inorganic ion composition similar to human blood plasma. The average thickness of the fibrous capsule surrounding the specimens implanted in the connective tissue was $38.57\;{\mu}m,\;62.27\;{\mu}m\;and\;45.64\;{\mu}m$ in the cp-Ti, Ti-6Al-4V ana Ti-6Al-7Nb alloy specimens with the chemical treatment respectively, and $52.20\;{\mu}m,\;75.62\;{\mu}m\;and\;66.56\;{\mu}m$ in the commercial specimens of cp-Ti, Ti-6Al-4V and Ti-6Al-7Nb without any treatment respectively. The results of this evaluation indicate that the chemically treated cp-Ti, Ti-6Al-4V ana Ti-6Al-7Nb alloys have better bioactivity and biocompatibility compared to the other metals tested.

• Journal of the Korean Ceramic Society
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• v.45 no.1
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• pp.60-64
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• 2008

[ $B_4C$ ] ceramics were fabricated by spark plasma sintering process and their sintering behavior, microstructure and mechanical properties were evaluated. Relative density of $B_4C$ ceramics could be achieved by spark plasma sintering method reached as high as 99% at lower temperature than conventional sintering method, in addition, without any sintering additives. The mechanical properties of $B_4C$ ceramics could be improved by the heat treatment at $1300^{\circ}C$ during sintering process which can be removed $B_2O_3$ phase from a $B_4C$ powder surface. This improvement results from the formation of a fine and homogeneous microstructure because the grain coarsening was suppressed by the elimination of $B_2O_3$ phase. Particularly, mechanical properties of the specimen experienced the $B_2O_3$ removing process improved over 30% compared with the specimen without that process.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.317-322
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• 1998

The stabilization of low dielectric constant SiOF films prepared by conventional PECVD using TEOS and $C_2F_6$ was evaluated by the $N_2O$-plasma post-deposition annealing. Properties of SiOF film became unstable when it was air-exposed or heat-treated. Water absorption of SiOF films was increased as F content was increased due to the for¬mation of F -Si- F bonds. Also F content of SiOF films decreased after heat treatment. $N_2O$-plasma post-deposition annealing was proved to be effective on stabilizing SiOF films. which was mainly due to the formation of thin SiON layer near the top surface of films. However. the value of dielectric constant was greatly increased again when $N_2O$-plasma post-deposition annealing was done for a long time. To stabilize the SiOF films without an increase of dielec¬tric constant by $N_2O$- plasma post-deposition annealing. the annealing time should be kept the minimum value. to which stabilizing effects against air environment and heat treatment were preserved.