Effect of Multiple Radio-Frequency on Sputter Etching in Dual Coil Inductively Coupled Plasma Etcher

• Jang, Hae-Gyu;Kim, Min-Shik;Park, Kun-Joo;Chae, Hee-Yeop
• • Proceedings of the Korean Vacuum Society Conference
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  • 2008.08a
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  • pp.284-284
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  • 2008
• PDF

Inductively Coupled Plasma Etching of $SrBi_2Ta_2O_9$ Thin Films ($SrBi_2Ta_2O_9$ 박막의 ICP 식각 특성)

• 한윤봉;박진수;임연호;최창선;최락준;이시형;이전국
• • Proceedings of the Materials Research Society of Korea Conference
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  • 2000.11a
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  • pp.101-101
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  • 2000
• PDF

Inductively coupled plasma reactive ion etching of ZnO using $C_2F_6$ and $BCl_3-based$ gas Plasmas

• Kang, Dong-Jin;Lee, Geon-Gyo;Lee, Byeong-Taek
• • Proceedings of the Materials Research Society of Korea Conference
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  • 2006.05a
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  • pp.27.2-27.2
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  • 2006
• PDF

A Study on the Characteristics of Inductively Coupled Plasma using Multiple Magnets and Its Application to Oxide Etching for Fabrication of Optical Waveguides (저장 강화된 유도결합형 플라즈마의 특성 및 광도파로 제작을 위한 산화막 식각에의 응용에 관한 연구)

• 안경준;이도행;유지범;염근영
• • Proceedings of the Korean Institute of Surface Engineering Conference
  • /
  • 1998.05a
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  • pp.160-161
  • /
  • 1998
• PDF

Effects of $N_2$ and NO addition of fast silicon layer chemical dry etching in $F_2/Ar$ remote plasma processing (빠른 실리콘 식각에 대한 $F_2/Ar$ 리모트 플라즈마와 $N_2$와 NO 첨가효과)

• Yun, Yeong-Bae;Park, Seong-Min;Lee, Nae-Eung
• • Proceedings of the Korean Institute of Surface Engineering Conference
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  • 2006.10a
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  • pp.73-73
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  • 2006
• PDF

Remote plasma etching of amorphous silicon using pin to plate dielectric barrier discharge (Pin to Plate Dielectric Barrier Dischrge 방식의 Romote 대기압 플라지므라르 이용한 비정질 Si 식각)

• Park, Jae-Beom;Gyeong, Se-Jin;Yeom, Geun-Yeong
• • Proceedings of the Korean Institute of Surface Engineering Conference
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  • 2006.10a
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  • pp.31-32
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  • 2006
• PDF

Plasma etching technique for SEM observation of polymer blends

• Chae, Byung-Joon;Kim, Jeong-Min;Gang, Sung-Yi;Lee, Min-Hee;Kim, Seo-Hwa
• • 한국전자현미경학회:학술대회논문집
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  • 2003.11a
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  • pp.47-48
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  • 2003
• PDF

Infinitely high etch selectivity of indium tin oxide (ITO) layer to photoresist during $CH_4/H_2/Ar$ inductively coupled plasma (ICP) etching

• Kim D.Y.;Ko J.H.;Park M.S.;Lee N.E.
• • Proceedings of the Korean Vacuum Society Conference
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  • 2006.08a
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  • pp.123-123
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  • 2006
• PDF

Mechanism of infinite $Si_3N_4/ArF$ PR etch selectivity during $CH_2F_2/H_2/Ar$ dual frequency capacitively coupled plasma etching of Si3N4 layers

• Park Chang-Gi;Kim Hui-Dae;Lee Chun-Hui;Lee Nae-Eung
• • Proceedings of the Korean Vacuum Society Conference
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  • 2006.08a
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  • pp.128-128
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  • 2006
• PDF

TRENCH ETCHING FOR SHALLOW TRENCH ISOLATION USING $Cl_2/Ar$ PLASMA

• Kim, C.B.;Jun, B.J.;Kim, J.K.;Lee, D.D.;Seol, Y.S.
• • Proceedings of the Materials Research Society of Korea Conference
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  • 1998.08a
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  • pp.79.1-79
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  • 1998
• PDF

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