Infinitely high etch selectivity of indium tin oxide (ITO) layer to photoresist during $CH_4/H_2/Ar$ inductively coupled plasma (ICP) etching

  • Kim D.Y. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Ko J.H. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Park M.S. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Lee N.E. (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
  • Published : 2006.08.01