• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.25-28
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• 2004

Photocurrent spectrum, photoresponse, and I-V measurements were made for close-packed HgTe nanoparticles without organic capping materials to investigate their photocurrent characteristics in the infrared range. In absorption and photoluminescence (PL) spectra taken for the close-packed nanoparticles film, the wavelengths of exciton peaks was red-shifted, compared with organic capped HgTe nanoparticles dispersed in solution. This red-shift is caused by the lessening of the exciton binding energy. The I-V curves and photoresponse for the close-packed nanoparticles film reveal their dark current and fast photoresponse with no current decay, respectively. The observation suggests that the HgTe nanoparticles are a very prospect material applicable for photodetectors in the whole IR range.

• ALGAE
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• v.30 no.2
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• pp.171-179
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• 2015

Organic light-emitting materials in marine macrophytes from various coastal environments were identified. Twentyeight species from the solvent fractions were examined and identified as candidates for bioorganic light-emitting materials using photoluminescence (PL) spectra and gas chromatography-mass spectrometry. We selected 16 solvent fractions from a total of 1,221 prepared from Ishige okamurae, Sargassum confusum, Grateloupia elliptica, Chondracanthus intermedius, Porphyra yezoensis, Meristotheca papulosa, Gelidium amansii, and Scytosiphon lomentaria. The maximum light-emitting PL spectra appeared at various colors, mainly between blue and green, based on chromaticity coordinates, from solvent fractions of M. papulosa, G. amansii, G. elliptica, P. yezoensis, S. lomentaria, I. okamurae, and C. intermedius. These results will contribute to the development of novel organic light-emitting materials.

• Journal of the Korean Chemical Society
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• v.45 no.2
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• pp.156-161
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• 2001

Various oxidation states of Polyaniline(PANI) were chemically synthesized, and characterized by FT-IR, UV-Vis, GPC, TG-DTA, Single layer light emitting diodes(LED) were perpared by spin coating of LEB-PANI solutions which have various oxidation states onto an ITO substrate and subsequent vacuum deposition of aluminum top electrode and then current-voltage characteristics. EL spectrum was investigated It was found that ${\pi}$-${\pi}$* transition were shifled to longer wavelength and molecular excition transition were decreased in the UV-Vis spectra and the intensity of EL and PL were increased as the contents of fully reduced form LEB increased. The turn-on voltage of ITO/LEB/AI structured LED was 5 V. It was found that the white light was emitted only from the phase with reduced epeat unit.

• Journal of the Mineralogical Society of Korea
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• v.22 no.2
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• pp.81-86
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• 2009

The luminescence and fluorescence were investigated by photoluminescence spectroscopy for six gemstones which exhibit color change effect. The shape of luminescence peaks appears different when observed by a photoluminescence spectroscopewith a 514 nm Ar laser source. However, it was not possible to observe the difference in the spectra between the natural and synthetic origins for the same type of gemstones. It was found that the photoluminescence spectrum was related to the crystal structure of the stones. Photoluminescence spectra using a 325 nm He-Cd source reveal that fluorescence is relatively strong for synthetic alexandrite, synthetic color change sapphire and natural alexandrite comparing to the rest of gemstones examined.

• Korean Journal of Crystallography
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• v.11 no.3
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• pp.137-146
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• 2000

The stoichiometric mix of evaporating materials for he CuInS₂ single crystal thin films was prepared. To obtain the single crystal thin films, CuINS₂ mixed crystal was deposited on etched semi-insulator GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperature were 640℃ and 430℃, respectively and the thickness of the single crystal thin films was 2 ㎛. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility deduced from Hall data are 9.64x10/sup 22//㎥ and 2.95x10/sup -2/ ㎡/V·s, respectively at 293 K. he optical energy gap was found to be 1.53 eV at room temperature. From the photocurrent spectrum obtained by illuminating perpendicular light on the c-axis of the thin film, we have found that the values of spin orbit coupling splitting ΔSo and the crystal field splitting ΔCr were 0.0211 eV and 0.0045 eV at 10K, respectively. From PL peaks measured at 10K, were can assign the 807.7 nm (1.5350 eV) peak to E/sub x/ peak of the free exciton emission, the 810.3 nm(1.5301 eV) peak to I₂ peak of donar-bound exciton emission and the 815.6 nm(1.5201 eV) peak to I₁ peak of acceptor-bound excition emission. In addition, the peak observed at 862.0 nm(1.4383 eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• Korean Journal of Materials Research
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• v.16 no.8
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• pp.479-484
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• 2006

Highly c-axis oriented poly-crystalline GaN with a dimension of $1{\sim}3\;{\mu}m$ was deposited on $c-Al_2O_3$ substrate by vapor transport epitaxy (VTE) method at the temperature range of $900{\sim}1150^{\circ}C$. XRD intensities from (00'2) plane of grown GaNs were increased with reaction conditions which indicate the improvement of the crystal quality. In the PL spectra measured at 10 K, the spectrum composed with the neutral-donor bound exciton-related emission at 3.47 eV, crystal defect-related emission band at 3.42 eV and with its phonon replicas. The fact that intensity of $I_2$ were increased and FWHM were decreased with growth conditions means that the quality of GaN crystals were improved. With this simple VTE technology, we confirm that the GaNs were simply deposited on sapphire substrate and crystal quality related to optical properties of GaN grown by VTE were relatively good. PL emission without deep level emission in spite of polycrystalline structure can be applicable to the fabrication of large area and low cost optical devices using poly-GaN grown by VTE.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.315-319
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• 1999

Properties of both photoluminescence and long-phosphorescent for Eu, Dy-codoped $SrAl_2O_4$ powder phosphor synthesized by solid reaction method were investigated by PL instrument. Two intense peaks in the emission spectrum measured at 10 K are observed near 450 nm (2.755 eV) and 520 nm (2.384 eV) wavelength, but at 300 K the main peak of 520 nm wavelength is presented. After the removal of light excitation (360 nm), the excellent after-glow characteristic of the phosphorescence were obtained as a result of low decay tiem, although the after-glow intensities of phosphor vary exponentially with the times.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.60-62
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• 2004

CdTe nanoparticles were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized CdTe nanoparticles revealed the strong exitonic peak in the visible region. Electroluminescence of CdTe nanoparticles were observed in the structure of Al/CdTe/PVK/ITO and Al/CdTe/PEDOT/ITO that were fabricated by spin coating of polyvinylcarvazole(PVK), poly(3,4-ethylenedioxythiophene(PEDOT) and CdTe nanoparticles. The turn-on voltages of Al/CdTe/PVK/ITO and Al/CdTe/PEDOT/ITO for electroluminescence were 5V and 6V, respectively. We identified that the reduction of turn-on voltage resulted from the increase of hole injection into the hole transport layer due to lower ionization energy of PEDOT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.33-34
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• 2005

Electrodes were fabricated on a single ZnO nanowire by photolithography process, metal evaporation, and lift-off. The slow photoresponses of the ZnO nanowire under the continuous illumination of 325nm-wavelength light (corresponding to above-bandgap excitation) indicate that the traps related to oxygen vacancy disturb the flow of electron in ZnO nanowire. The photoresponse and PL spectra were measured, and observed that the excitonic band in the PL spectrum was absent in the photoresponse.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.755-759
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• 2005

This study was based on organic electroluminescence display. Especially, DPAVBi, AVBi and DPVBi for the emitting materials were synthesized by Wittig, Wittig-Horner reaction. This reaction was conducted between phosphorous ylide and 4-(diphenylamino)benzaldehyde, 9-anthraldehyde and benzophenone. The structural property of reaction products were analyzed by FT-IR, $^1H-NMR$ spectroscopy and thermal stability, reactivity and PL property were analyzed by melting point, yield and emission spectrum, respectvely. The photoluminescence spectra of a pure DPAVBi, AVBi and DPVBi were observed at approximately 445nm, 484nm and 450nm, respectively. In this study, it was known that DPAVBi, AVBi, DPVBi had a different reaction properties according to stability of ${\alpha}$-position carbonyl group of the aldehyde, ketone.