• Advances in nano research
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• v.5 no.3
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• pp.261-279
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• 2017

Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the $SiN_x$ films on Si (001) substrates. The film composition was controlled via the flow ratio of silane ($SiH_4$) and ammonia ($NH_3$) in the range of R = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at $1100^{\circ}C$ for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in $SiN_x$ films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300 K in the range of 1.5-3.5 eV were detected and nonmonotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the "blue-orange" emission is due to the radiative defects in a $SiN_x$ matrix, whereas the "red" and "infrared" PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in $SiN_x$ films is discussed. The ways to control the dominant PL emission mechanisms are proposed.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.308-313
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• 2006

We report a photoluminescence (PL) study on the growth process of self-assembled InAs quantum dots (QDs) under the various growth conditions. Distinctive double-peak feature was observed in the PL spectra of the QD samples grown at the relatively high substrate temperature. From the excitation power-dependent PL and the temperature-dependent PL measurements, the double-peak feature is associated with the ground state transitions from InAs QDs with two different size branches. In addition, the variation in the bimodal size distribution of the QD ensembles with different InAs coverage is demonstrated.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.11-16
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• 1998

In this study, we prepared a Na$_2$Se/NH$_4$OH solution to investigate a passivation effect of Se on GaAs surface. X-ray photoelectron spectroscopy and photoluminescence (PL) were used to analyse the surface chemical bonding states and the optical properties of GaAs after Se-treatment and a successive exposure to air, respcetively. It was observed that all of the observed selenium bound with arsenic to form As-Se bond and showed only one oxidation state as -2. PL intensity of Se-passivated surface was larger than that of HCI-cleaned surface, and this means that the effective reduction of surface state density of GaAs was successfully obtained by this treatment. However the existence of partial oxide on the Se-passivated surface was seemed to be a major cause to the degradation of Se passivation effcet. PL intensity of Se-passivated surface also decreased according to air-exposure and converged to that of HCI-cleaned surface.

• Korean Journal of Materials Research
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• v.5 no.8
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• pp.936-944
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• 1995

The effects of Spinodal decomposition induced phase separated microstructure of InGaAsP/InP heterostructure on photoluminescence(PL) intensity and FWHM(full-width at half maximum) were investigated in this study. Lattice mismatches were measured by double crystal x-ray diffractometer, and the microstructures of phase separated InGaAsP were observed by transmission electron microscopy. It was found that the misfit stress calculated from lattice mismatch was related to the periodicity of Spinodal modulation. Strong dependence of PL intensity and FWHM on the modulation periodicity was also found. For systematic understanding of these observations, the interaction elastic strain energy function induced by misfit stress was proposed. The calculation illustrated that the microstructure of the epilayer such as Spinodal decomposition played an important role in determining the optoelectronic properties such as PL intensity and PL FWHM.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.24-27
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• 2013

In this paper, we investigated the effect of luminescence properties of various concentrations of magnesium-doped ZnS:Mn phosphor excited by plasma luminescence device. The PL intensity was evaluated in the range of 300~500 nm excitation wavelengths. We found the highest PL intensity of the phosphors excited by 365 nm and 450 nm was observed at Mg concentrations of 1.4 wt% and 0.8 wt%, respectively. In addition, an emission peak was distinguished at 580 nm wavelength. With increasing Mg dopant level, enhanced PL intensity was observed, which is possibly applicable to color converting materials by blue emission for white light sources. Finally, we evaluated the luminance properties of color converting ZnS:Mn,Mg phosphors with plasma blue light source. the white luminance of plasma light source with CIE(0.36,0.26) was established by color converting phosphors of ZnS:Mn with 0.8 wt% Mg.

• Bulletin of the Korean Chemical Society
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• v.28 no.7
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• pp.1091-1096
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• 2007

Water dispersible ZnS:Mn nanocrystals were synthesized by capping the surface of the nanocrystals with four kinds of aminoacids ligands: arginine, cystein, histidine, and methionine. The aminoacids capped ZnS:Mn nanocrystal powders were characterized by XRD, HR-TEM, EDXS, and FT-IR spectroscopy. The optical properties of the aminoacids capped ZnS:Mn colloidal nanocrystals were also measured by UV/Vis and solution photoluminescence (PL) spectroscopies in aqueous solvents. The solution PL spectra showed broad emission peaks around 575 nm (orange light emissions) with PL efficiencies in the range of 4.4 to 7.1%. The measured particle sizes for the aminoacid capped ZnS:Mn nanocrystals by HR-TEM images were in the range of 5.3 to 11.7 nm.

• Microbiology and Biotechnology Letters
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• v.17 no.3
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• pp.188-192
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• 1989

The promoters from akali-tolerant Bacillus sp. YA-14 chromosomal DMA cloned in B. subtilis using pPL703 were stably transferred to the donor strain. In alkali-tolerant Bacillus sp., the promoters revealed similiar properties with in B. subtilis but were preyed to be more efficient than in B. subtilis comparing with pPL708. Alkali-tolerant Bacillus sp. harboring the recombinant plasmid, p-l2Bl, was abnormally more inducible with chloramphenicol than B. subtilis haying the plasmid. Therefore the host-vector system using this recombinant plasmid and alkali-tolerant Bacillus sp. was expected to be more available.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.11a
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• pp.127-128
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• 2012

ZnO nanostructures were grown by the hydrothermal method on ZnO seed layers post-heated in the range $350-500^{\circ}C$. The effects of the post-heated ZnO seed layers on the structural and optical properties of the ZnO nanostructures were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) spectroscopy, and photoluminescence (PL) spectroscopy. The average grain sizes in the ZnO seed layers increased with increasing post-heating temperature, and nano-fibrous structures were observed on the surface of the ZnO seed layers post-heated at $450^{\circ}C$. The ZnO seed layers post-heated in the range $350-500^{\circ}C$ affected the residual stress, lattice distortion in the ZnO nanostructures and the intensity, positions, and full widths at half maximum of the 2-theta and PL peaks in the XRD and PL spectra for the ZnO nanostructures.

• Journal of Information Display
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• v.5 no.4
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• pp.12-17
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• 2004

A series of statistical random copolymers of dioctylfluorene (DOF) and 3,4-ethylenedioxythiophene (EDOT) were synthesized by Ni (0) mediated polymerization and their light-emitting properties were compared with poly (9,9-di-n-octylfluorene) (PDOF). The synthesized polymers were characterized using UV-vis spectroscopy, TGA, photoluminescence (PL) & electroluminescence (EL) spectroscopy and by conducting molecular weight studies. The resulting polymers were found to be thermally stable and readily soluble in organic solvents. The UV-visible absorption and PL emission spectra of the copolymers were gradually red-shifted as the fraction of EDOT in copolymers increased. Light-emitting devices were fabricated in an ITO (indium-tin oxide)/PEDOT/polymer/Ca/Al configuration. Interestingly, the EL spectra of these devices were similar to the PL spectra of the corresponding polymer film. However, the EL devices constructed from the copolymer showed more than 10 times higher efficiency level than the devices constructed from the PDOF homopolymer. This higher efficiency is possibly the result of better charge carrier balance in the copolymer systems due to the lower HOMO levels of the copolymers in comparison to that of PDOF homopolymer.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.510-514
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• 2018

Colloidal semiconductor quantum dots (QDs), because of the novel optical and electrical properties that stem from their three-dimensional confinement, have attracted great interest for their potential applications in such fields as bio-imaging, display, and opto-electronics. However, many semiconductors that can be exploited for QD applications contain toxic elements. Herein, we synthesized non-toxic ZnTe/ZnSe (core/shell) type-II QDs by pyrolysis method. Because of the unique type-II character of these QDs, their emission can range over an extended wavelength regime, showing photoluminescence (PL) from 450 nm to 580 nm. By optimizing the ZnSe shell growth condition, resulting ZnTe/ZnSe type-II QDs shows PL quantum yield up to ~ 25% with 35 nm PL bandwidth. Using a simple two step cation exchange reaction, we also fabricated ZnTe/ZnSe type-II QDs with absorption extended over the whole visible region. The visible-light sensitized heavy metal free ZnTe/ZnSe type-II QDs can be relevant for opto-electronic applications such as displays, light emitting diodes, and bio-imaging probes.